Method of manufacturing an enhanced high performance image sensor device
An image sensor includes a substrate, a thin film transistor on the substrate, a dielectric layer over the thin film transistor, a stacked metal layer on and extending through the dielectric layer to the thin film transistor, a bulk heterojunction layer directly coupled to the stacked metal layer, either a hole transport layer directly coupled to the bulk heterojunction layer, and a top contact layer directly coupled to the hole transport layer, or a top contact layer directly coupled to the bulk heterojunction layer. The bulk heterojunction layer includes an electron donor/acceptor material, the hole transport layer includes a transparent conductive polymer material, and the top contact layer includes a transparent conductive material. The image sensor includes a moisture barrier layer directly coupled to the top contact layer, including an optically clear adhesive and a laminated transparent barrier film.
1. An image sensor comprising:
a substrate;
a thin film transistor on the substrate;
a dielectric layer over the thin film transistor;
a stacked metal layer on and extending through the dielectric layer to the thin film transistor;
a bulk heterojunction layer directly contacting a top layer of the stacked metal layer, wherein the bulk heterojunction layer comprises a single material layer and directly contacts the top layer of the stacked metal layer without an intervening electron transport layer;
a hole transport layer directly contacting the bulk heterojunction layer; and
a top contact layer directly contacting the hole transport layer.
2. The image sensor of claim 1 , wherein the bulk heterojunction layer comprises an electron donor/acceptor material.
3. The image sensor of claim 1 , wherein the hole transport layer comprises a transparent conductive polymer material.
4. The image sensor of claim 1 , wherein the top contact layer comprises a transparent conductive material.
5. The image sensor of claim 1 , further comprising a moisture barrier layer directly coupled to the top contact layer.
6. The image sensor of claim 5 , wherein the moisture barrier layer comprises an optically clear adhesive and a laminated transparent barrier film.
7. The image sensor of claim 1 , wherein the bulk heterojunction layer and the hole transport layer comprise a photodiode having an anode coupled to a bias line of the image sensor.
8. An image sensor comprising:
a substrate;
a thin film transistor on the substrate;
a dielectric layer over the thin film transistor;
a stacked metal layer on and extending through the dielectric layer to the thin film transistor;
a hole transport layer directly contacting a top layer of the stacked metal layer;
a bulk heterojunction layer directly contacting the hole transport layer; and
a top contact layer directly contacting the bulk heterojunction layer.
9. The image sensor of claim 8 , wherein the hole transport layer comprises a conductive polymer material.
10. The image sensor of claim 8 , wherein the bulk heterojunction layer comprises an electron donor/acceptor material.
11. The image sensor of claim 8 , wherein the top contact layer comprises a transparent conductive material.
12. The image sensor of claim 8 , further comprising a moisture barrier layer directly coupled to the top contact layer.
13. The image sensor of claim 12 , wherein the moisture barrier layer comprises an optically clear adhesive and a laminated transparent barrier film.
14. The image sensor of claim 8 , wherein the bulk heterojunction layer and the hole transport layer comprise a photodiode having a cathode coupled to a bias line of the image sensor.
15. An image sensor comprising:
a substrate;
a thin film transistor on the substrate;
a dielectric layer over the thin film transistor;
a stacked metal layer on and extending through the dielectric layer to the thin film transistor;
a bulk heterojunction layer directly contacting a top layer of the stacked metal layer, wherein the bulk heterojunction layer comprises a single material layer and directly contacts the top layer of the stacked metal layer without an intervening electron transport layer;
and a top contact layer directly contacting the bulk heterojunction layer.
16. The image sensor of claim 15 , wherein the bulk heterojunction layer comprises an electron donor/acceptor material.
17. The image sensor of claim 15 , wherein the top contact layer comprises a transparent conductive material.
18. The image sensor of claim 15 , further comprising a moisture barrier layer directly coupled to the top contact layer.
19. The image sensor of claim 18 , wherein the moisture barrier layer comprises an optically clear adhesive and a laminated transparent barrier film.
20. The image sensor of claim 15 , wherein the bulk heterojunction layer comprises a photodiode coupled to a bias line of the image sensor.