Semiconductor device and fabricating method thereof
A semiconductor device includes a fin structure extending along a first direction, a channel layer wrapping around a top surface and opposite sidewalls of the fin structure, a gate stack extending across the channel layer along a second direction perpendicular to the first direction, and a spacer on a top surface of the channel layer and a sidewall of the gate stack when viewed in a cross section taken along the first direction. The channel layer includes a two-dimensional material. The gate stack includes a ferroelectric layer.
1. A semiconductor device comprising:
a fin structure extending along a first direction;
a channel layer wrapping around a top surface and opposite sidewalls of the fin structure, wherein the channel layer includes a two-dimensional material;
a gate stack extending across the channel layer along a second direction perpendicular to the first direction, wherein the gate stack includes a ferroelectric layer; and
a spacer on a top surface of the channel layer and a sidewall of the gate stack when viewed in a cross section taken along the first direction.
2. The semiconductor device of claim 1 , wherein the gate stack further includes a cap layer on a top surface of the ferroelectric layer and a gate layer on a top surface of the cap layer.
3. The semiconductor device of claim 1 , further comprising a passivation layer sandwiched between the fin structure and the channel layer.
4. The semiconductor device of claim 1 , further comprising a passivation layer sandwiched between the fin structure and the spacer.
5. The semiconductor device of claim 1 , further comprising a source/drain metal layer on a sidewall of the spacer when viewed in the cross section take along the first direction.
6. The semiconductor device of claim 1 , further comprising a source/drain metal layer on a sidewall of the channel layer when viewed in a cross section taken along the second direction.
7. The semiconductor device of claim 1 , further comprising a source/drain metal layer that has a top surface substantially coplanar with a top surface of the gate stack.
8. The semiconductor device of claim 1 , further comprising:
a source/drain metal layer on the fin structure;
a metal glue layer on a sidewall of the source/drain metal layer; and
a contact plug on a top surface of the metal glue layer.
9. The semiconductor device of claim 1 , further comprising:
a source/drain metal layer; and
a passivation layer sandwiched between the fin structure and the source/drain metal layer.
10. A semiconductor device comprising:
a fin structure;
a 2D-material passivation layer wrapping around three sides of the fin structure;
a 2D-material channel layer wrapping around three sides of the 2D-material passivation layer; and
a gate stack wrapping around three sides of the 2D-material channel layer, wherein the gate stack includes a ferroelectric layer.
11. The semiconductor device of claim 10 , further comprising a spacer alongside the gate stack and a source/drain metal layer adjacent the spacer.
12. The semiconductor device of claim 10 , further comprising a source/drain metal layer having a top surface substantially coplanar with a top surface of the gate stack.
13. The semiconductor device of claim 10 , further comprising:
a source/drain metal layer on a top surface of the 2D-material passivation layer;
a metal glue layer on a sidewall of the source/drain metal layer; and
a contact plug on a top surface of the metal glue layer.
14. The semiconductor device of claim 10 , further comprising:
a source/drain metal layer, wherein the 2D-material passivation layer is between the fin structure and the source/drain metal layer.
15. The semiconductor device of claim 10 , wherein the gate stack further includes a cap layer on a top surface of the ferroelectric layer and a gate layer on a top surface of the cap layer.
16. A semiconductor device comprising:
a fin structure extending along a first direction;
a gate stack extending across the fin structure along a second direction different from the first direction; and
a 2D-material channel layer wrapping around three sides of the fin structure and being wrapped around by a ferroelectric layer of the gate stack when viewed in a cross section taken along the second direction.
17. The semiconductor device of claim 16 , further comprising:
a boron nitride layer wrapped around by the 2D-material channel layer when viewed in the cross section taken along the second direction.
18. The semiconductor device of claim 16 , wherein the gate stack further comprises a capping metal layer wrapping around the ferroelectric layer when viewed in the cross section taken along the second direction.
19. The semiconductor device of claim 18 , wherein the gate stack further comprises a polysilicon layer wrapping around the capping metal layer when viewed in the cross section taken along the second direction.
20. The semiconductor device of claim 16 , further comprising:
a source/drain metal layer wrapping around the three sides of the fin structure when viewed in another cross section taken along the second direction.