Protection ring for image sensors

1. A device, comprising:

an array of semiconductor devices arranged in or on a semiconductor substrate, the array of semiconductor devices including a plurality of semiconductor devices which are arranged in multiple columns and multiple rows;

an isolation structure comprising dielectric material disposed in the semiconductor substrate and laterally surrounding the array; and

a protection ring circumscribing an outer perimeter of the array and circumscribing the isolation structure; the protection ring including a first ring of a first conductivity type in the semiconductor substrate and neighboring the array, a second ring of a second conductivity type circumscribing the first ring and meeting the first ring at a first p-n junction, and a third ring of the first conductivity type circumscribing the second ring and meeting the second ring at a second p-n junction; and

wherein a bottom surface of the isolation structure extends to a depth in the semiconductor substrate that is deeper than a lowermost portion of the protection ring.

2. The device of claim 1 , wherein the first ring has a first width, and the second ring has a second width greater than the first width.

3. The device of claim 2 , wherein the second width is at least approximately three times larger than the first width.

4. The device of claim 1 , wherein the protection ring further includes a fourth ring circumscribing the third ring and meeting the third ring at a third p-n junction.

5. The device of claim 4 , wherein the first ring is p-type, the second ring is n-type, the third ring is p-type, and the fourth ring is n-type.

6. The device of claim 4 , wherein the fourth ring has a fourth width as measured from the third p-n junction to an outermost extent of the fourth ring, wherein the fourth width is greater than a second width of the second ring.

7. The device of claim 4 , wherein a first width of the first ring and a third width of the third ring are at least substantially equal.

8. The device of claim 4 , wherein the protection ring further includes a fifth ring circumscribing the fourth ring and meeting the fourth ring at a fourth p-n junction.

9. The device of claim 8 , wherein the first ring is p-type, the second ring is n-type, the third ring is p-type, the fourth ring is n-type, and the fifth ring is p-type.

10. The device of claim 8 , wherein the fourth ring has a fourth width as measured from the third p-n junction to the fourth p-n junction, wherein the fourth width is greater than a second width of the second ring.

11. The device of claim 1 ,

wherein the bottom surface of the isolation structure is approximately the same depth as a lowermost portion of the protection ring.

12. The device of claim 11 , wherein the bottom surface of the isolation structure corresponds to a well region, and the bottom surface of the well region is located at approximately the same depth as the lowermost portion of the protection ring.

13. The device of claim 12 , wherein the isolation structure is configured to laterally separate semiconductor devices of neighboring columns from one another and configured to laterally separate semiconductor devices of neighboring rows from one another.

14. The device of claim 1 , wherein the first ring has an inner sidewall in direct contact with an outer sidewall of the dielectric material of the isolation structure.

15. The device of claim 1 , wherein the first ring, the second ring, and the third ring have widths that range from 10 nm to approximately 1000 μm.

16. The device of claim 1 , wherein the first ring, the second ring, and the third ring have widths that are equal to one another.

17. The device of claim 1 , wherein the first ring exhibits a p-type dopant concentration ranging from approximately 1*10 11 /cm 3 to approximately 1*10 13 /cm 3 ; the second ring exhibits an n-type dopant concentration ranging from approximately 1*10 11 /m 3 to approximately 1*10 13 /cm 3 ; and the third ring exhibits a p-type dopant concentration ranging from approximately 1*10 11 /m 3 to approximately 1*10 13 /cm 3 .

18. A device, comprising:

an array of semiconductor devices arranged in or on a semiconductor substrate, the array of semiconductor devices including a plurality of semiconductor devices which are arranged in multiple columns and multiple rows;

an isolation structure comprising dielectric material disposed in the semiconductor substrate and laterally surrounding the array;

a color filter array comprising a plurality of color filter elements arranged on a face of the semiconductor substrate; and

a protection ring including a plurality of concentric rings circumscribing an outer perimeter of the array of semiconductor devices and circumscribing an outer perimeter of the color filter array; the protection ring including a first, innermost ring of a first conductivity type in the semiconductor substrate and neighboring the array, a second ring of a second conductivity type circumscribing the first, innermost ring and meeting the first, innermost ring at a first p-n junction, and a third ring of the first conductivity type circumscribing the second ring and meeting the second ring at a second p-n junction;

wherein the first, innermost ring has an inner sidewall in direct contact with an outer sidewall of the dielectric material of the isolation structure; and

wherein a bottom surface of the isolation structure extends to a depth in the semiconductor substrate that is deeper than a lowermost portion of the first, innermost ring, is deeper than a lowermost portion of the second ring, and is deeper than a lowermost portion of the third ring.

19. A device, comprising:

a semiconductor substrate having a first face and a second face, the second face being opposite the first face;

an array of pixels disposed in the semiconductor substrate, the array of pixels including a plurality of pixel regions which are arranged in multiple columns and multiple rows, wherein a pixel region of the plurality of pixel regions comprises:

an isolation structure disposed in the semiconductor substrate and laterally surrounding the pixel region;

a p-type anode region disposed in the pixel region of the semiconductor substrate, and disposed near the first face of the semiconductor substrate; and

an n-type cathode region disposed in the pixel region of the semiconductor substrate and meeting the p-type anode region at a photodiode junction; and

a protection ring circumscribing an outer perimeter of the array of pixels;

the protection ring including a first ring of a first conductivity type in the semiconductor substrate and neighboring the array, a second ring of a second conductivity type circumscribing the first ring and meeting the first ring at a first p-n junction, a third ring of the first conductivity type circumscribing the second ring and meeting the second ring at a second p-n junction;

wherein the first ring of the protection ring has an inner sidewall in direct contact with an outer sidewall of dielectric material of the isolation structure; and

wherein a bottom surface of the isolation structure extends to a depth in the semiconductor substrate that is deeper than a lowermost portion of the first ring, is deeper than a lowermost portion of the second ring, and is deeper than a lowermost portion of the third ring.

20. The device of claim 19 , wherein the isolation structure is configured to laterally separate pixel regions of neighboring columns from one another and is configured to laterally separate pixel regions of neighboring rows from one another.