Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic device
There is provided a solid-state imaging device capable of reducing the number of wiring layers and achieving downsizing with flexible layout designing. The solid-state imaging device includes a first semiconductor chip including a first electrode pad, first wiring connected to a first electrode pad through a first via, and a logic circuit, which are formed therein, and a second semiconductor chip connected to the first semiconductor chip and including a second electrode pad, second wiring connected to the second electrode pad through a second via, and a pixel array, which are formed therein. The first electrode pad and the second electrode pad are bonded as being shifted from each other on a bonding surface of the first semiconductor chip and the second semiconductor chip. A total length of the shifted and bonded first and second electrode pads in an extending-direction of the wiring having a longer pitch of the first and second wiring is twice or more of an extending-direction length of the wiring having the longer pith.
1. A solid-state imaging device comprising:
a first semiconductor chip including a first electrode pad, first wiring connected to the first electrode pad through a first via, and a logic circuit, which are formed in the first semiconductor chip; and
a second semiconductor chip connected to the first semiconductor chip and including a second electrode pad, second wiring connected to the second electrode pad through a second via, and a pixel array, which are formed in the second semiconductor chip,
wherein
the first electrode pad and the second electrode pad are bonded as being shifted from each other on a bonding surface of the first semiconductor chip and the second semiconductor chip, and
a total length of the shifted and bonded first electrode pad and the shifted and bonded second electrode pad in an extending-direction of a wiring having a longer pitch of the first wiring and the second wiring is twice or more of an extending-direction length of the wiring having the longer pitch.
2. The solid-state imaging device according to claim 1 , wherein an area of a bonding part of the first electrode pad and the second electrode pad is equal to or larger than a total area of bonding surfaces of the first via and the second via respectively connected to the first electrode pad and the second electrode pad.
3. The solid-state imaging device according to claim 2 , wherein a size of the first electrode pad and a size of the second electrode pad are different.
4. A method of manufacturing a solid-state imaging device, the method comprising:
forming a first electrode pad, first wiring connected to the first electrode pad through a first via, and a logic circuit in a first semiconductor chip;
forming a second electrode pad, second wiring connected to the second electrode pad through a second via, and a pixel array in a second semiconductor chip, which is bonded to the first semiconductor chip; and
bonding the first semiconductor chip and the second semiconductor chip on a bonding surface,
wherein
the first electrode pad and the second electrode pad are bonded as being shifted from each other on the bonding surface, and
a total length of the shifted and bonded first electrode pad and the shifted and bonded second electrode pad in an extending-direction of a wiring having a longer pitch of the first wiring and the second wiring is twice or more of an extending-direction length of the wiring having the longer pitch.
5. An electronic device comprising a solid-state imaging device, the solid-state imaging device including:
a first semiconductor chip including a first electrode pad, first wiring connected to the first electrode pad through a first via, and a logic circuit, which are formed in the first semiconductor chip; and
a second semiconductor chip bonded to the first semiconductor chip and including a second electrode pad, second wiring connected to the second electrode pad through a second via, and a pixel array, which are formed in the second semiconductor chip,
wherein
the first electrode pad and the second electrode pad are bonded as being shifted from each other on a bonding surface of the first semiconductor chip and the second semiconductor chip, and
a total length of the shifted and bonded first electrode pad and the shifted and bonded second electrode pad in an extending-direction of a wiring having a longer pitch of the first wiring and the second wiring is twice or more of an extending-direction length of the wiring having the longer pitch.