Manufacturing method of wire grid polarizer
View Patent ↗A manufacturing method of a wire grid polarizer is provided, including: setting pattern data, where the pattern data correspond to a wire grid structure of the wire grid polarizer; preparing a metal ion solution; immersing at least one surface of a carrier substrate in the metal ion solution; and emitting, by an emitter device, an electron beam to the carrier substrate, and controlling a movement of the electron beam according to the pattern data to deposit a metal on the carrier substrate at a position where the electron beam passes, to form the wire grid structure.
1. A manufacturing method of a wire grid polarizer, comprising:
setting pattern data, wherein the pattern data correspond to a wire grid structure of the wire grid polarizer, and the wire grid structure comprises a plurality of wire grids which are arranged separately from each other;
preparing a metal ion solution;
immersing at least one surface of at least one carrier substrate of two carrier substrates in the metal ion solution; and
emitting, by an emitter device, an electron beam to the at least one carrier substrate, and controlling a movement of the electron beam according to the pattern data to deposit a metal on the at least one carrier substrate at a position where the electron beam passes, to form the wire grid structure;
wherein the step of immersing the at least one surface of the at least one carrier substrate of the two carrier substrates in the metal ion solution comprises: encapsulating the metal ion solution between the two carrier substrates; and
wherein the step of emitting, by the emitter device, the electron beam to the at least one carrier substrate comprises: determining a diameter of the electron beam ranging from 0.05 nm to 1 nm.
2. The manufacturing method as claimed in claim 1 , before encapsulating the metal ion solution between the two carrier substrates, further comprising: disposing a spacer between the two carrier substrates.
3. The manufacturing method as claimed in claim 1 , wherein the metal ion solution is an aluminum ion solution and the metal is aluminum.
4. The manufacturing method as claimed in claim 1 , wherein the metal ion solution is a palladium ion solution and the metal is palladium.
5. The manufacturing method as claimed in claim 1 , wherein the metal ion solution is a gold ion solution and the metal is gold.
6. The manufacturing method as claimed in claim 1 , wherein a width of each wire grid ranges from 30 nm to 100 nm.
7. The manufacturing method as claimed in claim 1 , wherein a height of each wire grid ranges from 50 nm to 300 nm.
8. The manufacturing method as claimed in claim 1 , wherein material of the at least one carrier substrate comprises silicon nitride.
9. A manufacturing method of a wire grid polarizer, comprising:
setting pattern data, wherein the pattern data correspond to a wire grid structure of the wire grid polarizer, and the wire grid structure comprises a plurality of wire grids which are arranged separately from each other;
preparing a metal ion solution;
immersing at least one surface of at least one carrier substrate of two carrier substrates in the metal ion solution; and
emitting, by an emitter device, an electron beam to the at least one carrier substrate, and controlling a movement of the electron beam according to the pattern data to deposit a metal on the at least one carrier substrate at a position where the electron beam passes, to form the wire grid structure.
10. The manufacturing method as claimed in claim 9 , wherein the step of immersing the at least one surface of the at least one carrier substrate of the two carrier substrates in the metal ion solution comprises: encapsulating the metal ion solution between the two carrier substrates.
11. The manufacturing method as claimed in claim 10 , before encapsulating the metal ion solution between the two carrier substrates, further comprising: disposing a spacer between the two carrier substrates.
12. The manufacturing method as claimed in claim 9 , wherein the step of emitting, by the emitter device, the electron beam to the at least one carrier substrate comprises: determining a diameter of the electron beam ranging from 0.05 nm to 1 nm.
13. The manufacturing method as claimed in claim 9 , wherein the metal ion solution is an aluminum ion solution and the metal is aluminum.
14. The manufacturing method as claimed in claim 9 , wherein the metal ion solution is a palladium ion solution and the metal is palladium.
15. The manufacturing method as claimed in claim 9 , wherein the metal ion solution is a gold ion solution and the metal is gold.
16. The manufacturing method as claimed in claim 9 , wherein a width of each wire grid ranges from 30 nm to 100 nm.
17. The manufacturing method as claimed in claim 9 , wherein a height of each wire grid ranges from 50 nm to 300 nm.
18. The manufacturing method as claimed in claim 9 , wherein material of the at least one carrier substrate comprises silicon nitride.