Paired intercalation cells for drift migration
A method is presented for mitigating conductance drift in intercalation cells for neuromorphic computing. The method includes forming a first electro-chemical random access memory (ECRAM) structure over a substrate and forming a second ECRAM over the substrate, the first and second ECRAMs sharing a common contact. The common contact can be either a source contact or a drain contact. Each of the first and second ECRAMs can include a tungsten oxide layer, an electrolyte layer, and a gate contact.
1. A method for mitigating conductance drift in intercalation cells for neuromorphic computing, the method comprising:
forming a first electro-chemical random access memory (ECRAM) structure over a substrate; and
forming a second ECRAM over the substrate, the first and second ECRAMs sharing a common contact disposed within one or more tungsten oxide layers.
2. The method of claim 1 , wherein the common contact is a drain contact.
3. The method of claim 1 , wherein the common contact is a source contact.
4. The method of claim 1 , wherein each of the first and second ECRAMs includes a tungsten oxide layer of the one or more tungsten oxide layers, an electrolyte layer, and a gate contact.
5. The method of claim 4 , wherein the electrolyte layer is a lithium phosphorous oxynitride (LiPON) layer.
6. The method of claim 1 , wherein the first and second ECRAMs are vertically stacked together.
7. The method of claim 1 , wherein a total weight of a synapse depends on a difference between the first and second ECRAMs.
8. A structure for mitigating conductance drift in intercalation cells for neuromorphic computing, the structure comprising:
a first electro-chemical random access memory (ECRAM) structure disposed over a substrate; and
a second ECRAM disposed over the substrate, the first and second ECRAMs sharing a common contact disposed within one or more tungsten oxide layers.
9. The structure of claim 8 , wherein the common contact is a drain contact.
10. The structure of claim 8 , wherein the common contact is a source contact.
11. The structure of claim 8 , wherein the first and second ECRAMs are connected by wiring.
12. The structure of claim 8 , wherein each of the first and second ECRAMs includes a tungsten oxide layer of the one or more tungsten oxide layers, an electrolyte layer, and a gate contact.
13. The structure of claim 12 , wherein the electrolyte layer is a lithium phosphorous oxynitride (LiPON) layer.
14. The structure of claim 8 , wherein a total weight of a synapse depends on a difference between the first and second ECRAMs.
15. A structure for mitigating conductance drift in intercalation cells for neuromorphic computing, the structure comprising:
a first electro-chemical random access memory (ECRAM) structure disposed over a substrate; and
a second ECRAM vertically stacked with the first ECRAM, the first and second ECRAMs separated by a spacer directly contacting one or more tungsten oxide layers.
16. The structure of claim 15 , wherein the first ECRAM includes a first set of source and drain contacts and the second ECRAM includes a second set of source and drain contacts.
17. The structure of claim 15 , wherein the first and second ECRAMs share a common drain contact.
18. The structure of claim 15 , wherein the first and second ECRAMs share a common source contact.
19. The structure of claim 15 , wherein each of the first and second ECRAMs includes a tungsten oxide layer of the one or more tungsten oxide layers, an electrolyte layer, and a gate contact.
20. The structure of claim 15 , wherein a total weight of a synapse depends on a difference between the first and second ECRAMs.