Sub word line driver of semiconductor memory device

1. A sub word line driver of a semiconductor memory device comprising:

a first active region through which first and second main word lines extending in a first direction pass;

a second active region disposed adjacent to the first active region in the first direction, and formed to allow the first and second main word lines to pass therethrough;

first gates arranged in the first active region disposed between the first main word line and the second main word line, and configured to receive first word line selection signals; and

second gates arranged in outside ends of the first and second main word lines in the second active region, and configured to receive second word line selection signals,

wherein each of the first and second gates is formed to have a substantially square shape, and

wherein a spacing between the first main word line and the second main word line within the first active region is different in size from a spacing between the first main word line and the second main word line within the second active region.

2. The sub word line driver according to claim 1 , wherein the first active region includes:

a first partial active region having both ends through which the first main word line and the second main word line respectively pass;

a second partial active region adjacent to and symmetrical to the first partial active region, and formed to have both ends through which the first main word line and the second main word line respectively pass; and

a third partial active region formed to couple a center part of the first partial active region to a center part of the second partial active region.

3. The sub word line driver according to claim 1 , wherein:

a spacing between the first main word line and the second main word line within the second active region is smaller in size than a spacing between the first main word line and the second main word line within the first active region.

4. The sub word line driver according to claim 1 , wherein the second active region includes:

a fourth partial active region having a center part through which the first main word line and the second main word line pass;

a fifth partial active region adjacent to and symmetrical to the fourth partial active region, and formed to have a center part through which the first main word line and the second main word line pass;

a sixth partial active region formed to couple a center part of the fourth partial active region to a center part of the fifth partial active region;

a seventh partial active region formed to couple a first end of the fourth partial active region and a first end of the fifth partial active region; and

an eighth partial active region through formed to couple a second end of the fourth partial active region and a second end of the fifth partial active region.

5. The sub word line driver according to claim 4 , wherein the second gates includes:

a third selection gate disposed to overlap one end of the fourth partial active region and one end of the seventh partial active region;

a fourth selection gate disposed to overlap the other end of the fourth partial active region and one end of the eighth partial active region;

a fifth selection gate disposed to overlap one end of the fifth partial active region and the other end of the seventh partial active region; and

a sixth selection gate disposed to overlap the other end of the fifth partial active region and the other end of the eighth partial active region.

6. The sub word line driver according to claim 5 , further comprising:

a fifth contact disposed between the first main word line and the third selection gate in the fourth partial active region, and coupled to a fifth sub word line;

a sixth contact disposed between the second main word line and the fourth selection gate in the fourth partial active region, and coupled to a sixth sub word line;

a seventh contact disposed between the first main word line and the fifth selection gate in the fifth partial active region, and coupled to a seventh sub word line; and

an eighth contact disposed between the second main word line and the sixth selection gate in the fifth partial active region, and coupled to an eighth sub word line.

7. The sub word line driver according to claim 5 , wherein:

the third selection gate and the fourth selection gate are configured to receive the same word line selection signal; and

the fifth selection gate and the sixth selection gate are configured to receive the same word line selection signal.