Enhanced selective deposition process

1. A method of forming a structure with desired materials on a substrate comprising:

supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate;

selectively forming a passivation layer on a first material of the substrate;

selectively forming self assembled monolayers on a second material of the substrate; and

selectively forming a material layer on the passivation layer.

2. The method of claim 1 , wherein the hydroxy terminated hydrocarbon containing material has a formula of (C x H y )(OH) z , which x, y and z are integers.

3. The method of claim 2 , wherein the hydroxy terminated hydrocarbon containing material is methanol (CH 3 OH) or ethanol (C 2 H 5 OH).

4. The method of claim 1 , wherein the first material is a metal material.

5. The method of claim 4 , wherein the passivation layer comprises a metal material having hydro-group (—H) or —OCH 3 group attached thereto.

6. The method of claim 1 , wherein the passivation layer has a thickness between about 2 Å and about 30 Å.

7. The method of claim 1 , wherein the material layer is a metal containing layer or a metal containing dielectric layer.

8. The method of claim 7 , wherein the material layer is at least one of AlN, WSiO 2 , WSi, AlON, TiN, TaN, TiON, TaON, hafnium containing oxide, zirconium oxide, titanium oxide, tantalum oxide, niobium oxide, iron oxide, yttrium oxide, and aluminum oxide.

9. The method of claim 8 , wherein the material layer is at least one of hafnium containing oxide or aluminum oxide.

10. The method of claim 1 , wherein the second material is an insulating material.

11. The method of claim 1 , wherein selectively forming the material layer is by an atomic layer deposition process.

12. The method of claim 1 , further comprising:

supplying a pulse of water steam onto the substrate prior to forming the self assembled monolayers.

13. The method of claim 1 , wherein supplying the first gas comprising the hydroxy terminated hydrocarbon containing material further comprises:

supplying a pulse comprising water steam to the substrate surface.

14. The method of claim 1 , wherein the passivation layer, the self assembled monolayers and the material layer are formed in a single processing chamber.

15. The method of claim 1 , further comprising:

maintaining a substrate temperature between 100 degrees Celsius and about 300 degrees Celsius.

16. A method of forming a structure with desired materials on a substrate for semiconductor applications comprising:

selectively forming a passivation layer on a first material of a substrate, wherein the passivation layer comprises a metal material having hydro-group (—H) or —OCH 3 group attached thereto;

selectively forming self assembled monolayers on a second material of the substrate; and

selectively forming a material layer on the passivation layer using an atomic layer deposition process.

17. The method of claim 16 , wherein the passivation layer is formed by supplying a processing gas comprising hydroxy terminated hydrocarbon containing material to a surface of the substrate.

18. The method of claim 17 , wherein the hydroxy terminated hydrocarbon containing material has a formula of (C x H y )(OH) z , which x, y and z are integers.

19. The method of claim 18 , wherein the hydroxy terminated hydrocarbon containing material is methanol (CH 3 OH) or ethanol (C 2 H 5 OH).

20. A structure comprising:

a passivation layer comprising a metal material having hydro-group (—H) or —OCH 3 group attached thereto formed on a first material of a substrate, wherein the substrate includes a second material formed among the first material, wherein the first material is a metal material and the second material is an insulating material; and

a material layer formed on the passivation layer, wherein the material layer is a metal containing dielectric layer.