Semiconductor devices
A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.
1. A method of manufacturing semiconductor device, comprising:
stacking sacrificial layers and semiconductor layers on a substrate alternately;
patterning the sacrificial layers and the semiconductor layers to form an active pattern;
forming a first sacrificial gate pattern on the active pattern;
forming a pair of source/drain patterns on opposite sides of the first sacrificial gate pattern, respectively, the semiconductor layers being interposed between the pair of source/drain patterns to connect them;
removing the first sacrificial gate pattern to form a first space and to expose the sacrificial layers;
removing the exposed sacrificial layers to form second spaces, respectively;
forming a first metal nitride layer in the first and second spaces;
forming a second metal nitride layer containing silicon on the first metal nitride layer in the first space; and
forming a first metal layer on the second metal nitride layer in the first space.
2. The method of claim 1 , wherein the first metal nitride layer is formed to completely fill the second spaces.
3. The method of claim 2 , wherein the second metal nitride layer and the first metal layer do not fill the second spaces.
4. The method of claim 1 , wherein a silicon concentration of the second metal nitride layer ranges from about 20 at % to about 50 at %.
5. The method of claim 1 , further comprising:
forming a second sacrificial gate pattern on the active pattern;
removing the second sacrificial gate pattern to form a third space and to expose the sacrificial layers;
removing the exposed sacrificial layers to form fourth spaces, respectively;
forming a third metal nitride layer containing silicon in the third and fourth spaces; and
forming a second metal layer on the third metal nitride layer in the third space.
6. The method of claim 5 , wherein the third metal nitride layer is formed to completely fill the fourth spaces.
7. The method of claim 5 , wherein the first metal layer and the second metal layer include the same metal as each other.
8. The method of claim 5 , wherein the third metal nitride layer has a silicon concentration that varies based on a distance from the substrate.
9. The method of claim 5 , wherein a silicon concentration of the second metal nitride layer is greater than that of the third metal nitride layer.
10. The method of claim 1 , further comprising:
forming a second sacrificial gate pattern on the active pattern;
removing the second sacrificial gate pattern to form a third space and to expose the sacrificial layers;
removing the exposed sacrificial layers to form fourth spaces, respectively;
sequentially forming a third metal nitride layer and a fourth metal nitride layer in the third and fourth spaces; and
forming a second metal layer on the fourth metal nitride layer in the third space,
wherein the fourth metal nitride layer contains silicon, and
wherein the third and fourth metal nitride layers are formed to completely fill the fourth spaces.
11. A method of manufacturing semiconductor device, comprising:
stacking sacrificial layers and semiconductor layers on a substrate alternately;
patterning the sacrificial layers and the semiconductor layers to form a first active pattern and a second active pattern;
forming a first sacrificial gate pattern and a second sacrificial gate pattern on the first and second active patterns, respectively;
removing the first and second sacrificial gate patterns to form a first space and a second space, respectively;
sequentially forming, in the first space, a first metal nitride layer, a second metal nitride layer containing silicon, and a first metal layer; and
sequentially forming, in the second space, a third metal nitride layer containing silicon, and a second metal layer.
12. The method of claim 11 , wherein a silicon concentration of the second metal nitride layer is greater than that of the third metal nitride layer.
13. The method of claim 11 , wherein the first and second metal layers comprise aluminum, tungsten, titanium, and/or tantalum.
14. The method of claim 11 , further comprising:
removing the sacrificial layers of the first active pattern to form third spaces, respectively; and
removing the sacrificial layers of the second active pattern to form fourth spaces, respectively,
wherein the first metal nitride layer is formed to completely fill the third spaces, and
wherein the third metal nitride layer is formed to completely fill the fourth spaces.
15. The method of claim 14 , wherein the second metal nitride layer does not fill the third spaces.
16. A method of manufacturing semiconductor device, comprising:
stacking sacrificial layers and semiconductor layers on a substrate alternately;
patterning the sacrificial layers and the semiconductor layers to form a first active pattern and a second active pattern;
forming a first sacrificial gate pattern and a second sacrificial gate pattern on the first and second active patterns, respectively;
removing the first and second sacrificial gate patterns to form a first space and a second space, respectively;
sequentially forming, in the first space, a first metal nitride layer, and a second metal nitride layer containing silicon; and
forming a third metal nitride layer containing silicon in the second space,
wherein a silicon concentration of the second metal nitride layer is greater than that of the third metal nitride layer.
17. The method of claim 16 , further comprising:
removing the sacrificial layers of the first active pattern to form third spaces, respectively; and
removing the sacrificial layers of the second active pattern to form fourth spaces, respectively,
wherein the first metal nitride layer is formed to completely fill the third spaces, and
wherein the third metal nitride layer is formed to completely fill the fourth spaces.
18. The method of claim 17 , wherein the second metal nitride layer does not fill the third spaces.
19. The method of claim 16 , wherein a silicon concentration of the second metal nitride layer ranges from about 20 at % to about 50 at %.
20. The method of claim 16 , further comprising forming a metal layer on the second metal nitride layer and the third metal nitride layer.