Composition for forming film protecting against aqueous hydrogen peroxide solution
A composition for forming protective film against aqueous hydrogen peroxide solution, composition including resin; compound of following Formula (1a), (1b), or (1c): (wherein X is carbonyl group or methylene group; 1 and m are each independently integer of 0-5 to satisfy relation: 3≤1+m≤10; n is integer of 2-5; u and v are each independently integer of 0-4 to satisfy relation: 3≤u+v≤8; R 1 -R 4 are each independently hydrogen atom, hydroxy group, C 1-10 hydrocarbon group, or C 6-20 aryl group; when R 1 -R 4 are each the C 1-10 hydrocarbon group; and j and k are each independently 0 or 1); crosslinking agent and catalyst; and solvent, wherein amount of compound of Formula (1a), (1b), or (1c) is at most 80% by mass relative to amount of resin, and amount of crosslinking agent is 5%-40% by mass relative to amount of resin.
1. A composition for forming a protective film against an aqueous hydrogen peroxide solution, the composition comprising a resin; a compound of the following Formula (1a), (1b), or (1c):
(wherein X is a carbonyl group or a methylene group; 1 and m are each independently an integer of 0 to 5 so as to satisfy the relation: 3≤1+m≤10; n is an integer of 2 to 5; u and v are each independently an integer of 0 to 4 so as to satisfy the relation: 3≤u+v≤8; R 1 , R 2 , R 3 , and R 4 are each independently a hydrogen atom, a hydroxy group, a C 1-10 hydrocarbon group optionally having at least one hydroxy group as a substituent and optionally having at least one double bond in a main chain, or a C 6-20 aryl group optionally having at least one hydroxy group as a substituent; when R 1 , R 2 , R 3 , and R 4 are each the C 1-10 hydrocarbon group, R 1 and R 2 optionally form a benzene ring together with a ring carbon atom to which R 1 and R 2 are bonded, R 3 and R 4 optionally form a benzene ring together with a ring carbon atom to which R 3 and R 4 are bonded, or the benzene ring optionally has at least one hydroxy group as a substituent; and j and k are each independently 0 or 1; a crosslinking agent; a crosslinking catalyst; and a solvent, wherein the amount of the compound of Formula (1a), (1b), or (1c) is at most 80% by mass relative to the amount of the resin, and the amount of the crosslinking agent is 5% by mass to 40% by mass relative to the amount of the resin.
2. The composition for forming a protective film against an aqueous hydrogen peroxide solution according to claim 1 , wherein the resin is a polymer having a weight average molecular weight of 1,000 or more.
3. The composition for forming a protective film against an aqueous hydrogen peroxide solution according to claim 1 , wherein the resin is a monomer having a molecular weight of 600 or less.
4. The composition for forming a protective film against an aqueous hydrogen peroxide solution according to claim 3 , wherein the monomer is a compound of the following Formula (2):
Ar-Q-Ar (2)
(wherein each Ar is an aryl group, and the aryl group has at least one hydroxy group as a substituent; and Q is a methylene group or a divalent linking group having at least one benzene ring or naphthalene ring.
5. The composition for forming a protective film against an aqueous hydrogen peroxide solution according to claim 1 , wherein the compound of Formula (1a) is any of compounds of the following Formulae (1a-1) to (1a-5); the compound of Formula (1b) is a compound of the following Formula (1b-1) or (1b-2); and the compound of Formula (1c) is a compound of the following Formula (1c-1)
6. The composition for forming a protective film against an aqueous hydrogen peroxide solution according to claim 1 , wherein the composition is a composition for forming a resist underlayer film.
7. A pattern forming method comprising forming a protective film, on a semiconductor substrate optionally having an inorganic film formed on its surface, from the composition for forming a protective film against an aqueous hydrogen peroxide solution according to claim 1 ; forming a resist pattern on the protective film; dry-etching the protective film with the resist pattern serving as a mask, to thereby expose the surface of the inorganic film or the semiconductor substrate; wet-etching the inorganic film or the semiconductor substrate with the dry-etched protective film serving as a mask by using an aqueous hydrogen peroxide solution; and washing the wet-etched inorganic film or semiconductor substrate.