Airgap vertical transistor without structural collapse
Embodiments of the present invention are directed to forming an airgap-based vertical field effect transistor (VFET) without structural collapse. A dielectric collar anchors the structure while forming the airgaps. In a non-limiting embodiment of the invention, a vertical transistor is formed over a substrate. The vertical transistor can include a fin, a top spacer, a top source/drain (S/D) on the fin, and a contact on the top S/D. A dielectric layer is recessed below a top surface of the top spacer and a dielectric collar is formed on the recessed surface of the dielectric layer. Portions of the dielectric layer are removed to form a first cavity and a second cavity. A first airgap is formed in the first cavity and a second airgap is formed in the second cavity. The dielectric collar anchors the top S/D to the top spacer while forming the first airgap and the second airgap.
1. A method for forming a semiconductor device, the method comprising:
forming a vertical transistor over a substrate, the vertical transistor comprising a fin, a top spacer, a top source/drain (S/D) on the fin, and a contact on the top S/D;
recessing a dielectric layer below a top surface of the top spacer;
forming a dielectric collar on a recessed surface of the dielectric layer, on sidewalls of the dielectric layer, and on the top surface of the top spacer;
removing portions of the dielectric layer to form a first cavity and a second cavity, the first cavity between the contact and the top spacer, the second cavity between opposite sidewalls of the dielectric collar, the dielectric collar anchoring the top S/D to the top spacer; and
forming a first airgap in the first cavity and a second airgap in the second cavity.
2. The method of claim 1 , wherein recessing the dielectric layer comprises a directional reactive ion etch (RIE).
3. The method of claim 2 , wherein the directional RIE exposes the top surface and sidewalls of the top spacer.
4. The method of claim 1 , wherein removing portions of the dielectric layer comprises an isotropic etch.
5. The method of claim 4 , wherein removing portions of the dielectric layer further comprises selectively removing a first portion and a second portion of the dielectric layer.
6. The method of claim 5 , wherein the first portion and the second portion of the dielectric layer are removed selective to a bottom spacer of the vertical transistor, the top spacer, or both the bottom spacer and the top spacer.
7. The method of claim 6 , wherein selectively removing the first portion exposes a surface of the bottom spacer.
8. The method of claim 6 , wherein selectively removing the second portion exposes a surface of the top S/D and the top surface of the top spacer.
9. The method of claim 8 , wherein selectively removing the second portion also exposes a sidewall of the fin.
10. The method of claim 1 , wherein forming the first airgap and the second airgap comprises a non-conformal dielectric deposition.
11. A method for forming a semiconductor device, the method comprising:
forming a vertical transistor over a substrate;
performing a directional dielectric recess to partially remove an interlayer dielectric (ILD) below a top spacer of the vertical transistor;
forming a dielectric collar on a recessed surface of the ILD; and
forming one or more airgaps in the vertical transistor;
wherein the dielectric collar anchors portions of the vertical transistor while forming the one or more airgaps.
12. The method of claim 11 , wherein forming the one or more airgaps comprises a non-conformal dielectric deposition over the top spacer.
13. The method of claim 11 further comprising performing an isotropic etch to form a first cavity and a second cavity in the vertical transistor, the first cavity between a contact and the top spacer, the second cavity between opposite sidewalls of the dielectric collar.
14. The method of claim 13 , wherein forming the first cavity and the second cavity comprises selectively removing a first portion and a second portion of the ILD.
15. The method of claim 14 , wherein the first portion and the second portion of the ILD are removed selective to a bottom spacer of the vertical transistor, the top spacer, or both the bottom spacer and the top spacer.