Semiconductor package having reflective layer with selective transmittance
A semiconductor package includes a semiconductor package substrate. An insulating layer is disposed on the semiconductor package substrate. A semiconductor chip is disposed on the semiconductor package substrate and is covered by the insulating layer. A reflective layer is disposed on the insulating layer and is spaced apart from the semiconductor chip. The reflective layer is configured to selectively transmit radiation through to the insulating layer. A protective layer is disposed on the reflective layer.
1. A semiconductor package, comprising:
a semiconductor package substrate;
an insulating layer disposed on the semiconductor package substrate;
a semiconductor chip disposed on the semiconductor package substrate and covered by the insulating layer;
a reflective layer disposed on the insulating layer and spaced apart from the semiconductor chip, the reflective layer configured to selectively transmit soft X-rays and hard X-rays through to the insulating layer to protect the semiconductor chip from the soft X-rays; and
a protective layer disposed on the reflective layer.
2. The semiconductor package of claim 1 , wherein the reflective layer is configured to be more transmissive of hard X-rays than soft X-rays.
3. The semiconductor package of claim 1 , wherein the reflective layer is configured to block soft X-rays, and transmit hard X-rays.
4. The semiconductor package of claim 1 wherein the reflective layer is configured to substantially block laser light.
5. The semiconductor package of claim 1 , wherein the reflective layer includes a metal material having an atomic number greater than 12, and wherein the protective layer includes a same material as the insulating layer.
6. The semiconductor package of claim 1 , wherein the reflective layer entirely covers an upper surface of the insulating layer.
7. The semiconductor package of claim 1 , further comprising: a shielding layer spaced apart from the semiconductor chip and wrapping around the insulating layer between the semiconductor package substrate and the reflective layer, wherein the shielding layer extends from an upper surface of the semiconductor package substrate to a lower surface of the reflective layer.
8. The semiconductor package of claim 1 , wherein the protective layer includes a thermochromic material and/or a photochromic material, and wherein the thermochromic material and/or the photochromic material has a crystal structure including crystal grains.
9. The semiconductor package of claim 1 , further comprising: an insertion layer interposed between the reflective layer and the protective layer, wherein the insertion layer includes reflectors which are configured to reflect electromagnetic waves.
10. The semiconductor package of claim 1 , further comprising: a heat transfer material layer disposed within the insulating layer between the semiconductor chip and the reflective layer.
11. A semiconductor package, comprising:
a semiconductor package substrate;
a molding layer disposed on the semiconductor package substrate; and
a semiconductor chip disposed on the semiconductor package substrate and covered by the molding layer,
wherein the semiconductor package is configured to be more transmissive of hard X-rays than soft X-rays to protect the semiconductor chip from the soft X-rays,
wherein the molding layer comprises:
an insulating layer disposed on an upper surface of the semiconductor package substrate and including the semiconductor chip therein;
a reflective layer disposed on the insulating layer and spaced apart from the semiconductor chip; and
a protective layer disposed on the reflective layer, and
wherein the reflective layer is configured to block soft X-rays, and transmit hard X-rays into the insulating layer.
12. The semiconductor package of claim 11 , wherein the reflective layer is configured to block laser light.
13. A semiconductor package, comprising:
a semiconductor package substrate;
an insulating layer disposed on the semiconductor package substrate;
a semiconductor chip disposed on the semiconductor package substrate and covered by the insulating layer;
a reflective layer disposed on the insulating layer and spaced apart from the semiconductor chip and including a metal material having an atomic number greater than 12 to protect the semiconductor chip from soft X-rays; and
a protective layer disposed on the reflective layer.
14. The semiconductor package of claim 13 , wherein the reflective layer is configured to be more transmissive of hard X-rays than soft X-rays.
15. The semiconductor package of claim 13 , wherein the reflective layer is configured to block soft X-rays, and transmit hard X-rays.
16. The semiconductor package of claim 13 , wherein the reflective layer is configured to block laser light.