Ceramic capacitor, circuit substrate and manufacturing method of ceramic capacitor
A ceramic capacitor includes a multilayer structure, wherein a main component of dielectric layers is ceramic expressed by a general formula A m BO 3 (0.995≤m≤1.010), wherein the dielectric layers include a rare earth element Re as a first sub-component by 2.0 mol to 5.0 mol when converted into Re 2 O 3 /2, include Mg as a second sub-component by 1.0 mol to 3.0 mol when converted into MgO, include V as a third sub-component by 0.05 mol to 0.25 mol when converted into V 2 O 5 /2, include Si as a fourth sub-component by 0.5 mol to 5.0 mol when converted into SiO 2 , include an alkali earth metal element M as a fifth sub-component by 0.1 mol to 5.0 mol when converted into MCO 3 , on a presumption that an amount of the ceramic is 100 mol, wherein a ratio Si/V is 30 or less.
1. A ceramic capacitor comprising:
a multilayer structure having a structure in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked,
wherein a main component of the plurality of dielectric layers is ceramic having a perovskite structure that includes Ba and Ti and is expressed by a general formula A m BO 3 (0.995≤m≤1.010),
wherein the plurality of dielectric layers include a rare earth element which is at least one of Y, Gd, Tb, Dy and Ho as a first sub-component by 2.0 mol to 5.0 mol when converted into R 2 O 3 /2 (R represents the rare earth element), include Mg as a second sub-component by 1.0 mol to 3.0 mol when converted into MgO, include V as a third sub-component by 0.05 mol to 0.25 mol when converted into V 2 O 5 /2, include Si as a fourth sub-component by 0.5 mol to 5.0 mol when converted into SiO 2 , include an alkali earth metal element M which is at least one of Ba, Sr and Ca as a fifth sub-component by 0.1 mol or more and 2.0 mol or less when converted into MCO 3 , on a presumption that an amount of the ceramic is 100 mol,
wherein a ratio Si/V which is a ratio of the fourth sub-component with respect to the third sub-component is 30 or less.
2. The ceramic capacitor as claimed in claim 1 , wherein the multilayer structure has a parallelepiped shape of which two sides are at a right angle and have a length of 10 mm or more.
3. A circuit substrate comprising:
a substrate; and
a ceramic capacitor of claim 1 mounted on the substrate.
4. A manufacturing method of a ceramic capacitor comprising:
forming a green sheet by adding a rare earth element which is at least one of Y, Gd, Tb, Dy and Ho as a first sub-component by 2.0 mol to 5.0 mol when converted into R 2 O 3 /2 (R represents the rare earth element), adding Mg as a second sub-component by 1.0 mol to 3.0 mol when converted into MgO, adding V as a third sub-component by 0.05 mol to 0.25 mol when converted into V 2 O 5 /2, adding Si as a fourth sub-component by 0.5 mol to 5.0 mol when converted into SiO 2 , adding an alkali earth metal element M which is at least one of Ba, Sr and Ca as a fifth sub-component by 0.1 mol or more and 2.0 mol or less when converted into MCO 3 , to ceramic powders having a perovskite structure that includes Ba and Ti and is expressed by a general formula A m BO 3 (0.995≤m≤1.010), on a presumption that an amount of the ceramic powder is 100 mol, a ratio Si/V which is a ratio of the fourth sub-component with respect to the third sub-component being 30 or less;
providing a metal conductive paste for forming an internal electrode layer, on the green sheet; and
firing the green sheet on which the metal conductive paste is provided.
5. A ceramic capacitor comprising:
a multilayer structure having a structure in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked,
wherein a main component of the plurality of dielectric layers is ceramic having a perovskite structure that includes Ba and Ti and is expressed by a general formula A m BO 3 (0.995≤m≤1.010),
wherein the plurality of dielectric layers include a rare earth element which is at least one of Y, Gd, Tb, Dy and Ho as a first sub-component by 2.0 mol to 5.0 mol when converted into R 2 O 3 /2 (R represents the rare earth element), include Mg as a second sub-component by 1.0 mol to 3.0 mol when converted into MgO, include V as a third sub-component by 0.05 mol to 0.15 mol when converted into V 2 O 5 /2, include Si as a fourth sub-component by 0.5 mol to 5.0 mol when converted into SiO 2 , include an alkali earth metal element M which is at least one of Ba, Sr and Ca as a fifth sub-component by 0.1 mol to 5.0 mol when converted into MCO 3 , on a presumption that an amount of the ceramic is 100 mol,
wherein a ratio Si/V which is a ratio of the fourth sub-component with respect to the third sub-component is 30 or less.
6. A ceramic capacitor comprising:
a multilayer structure having a structure in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked,
wherein a main component of the plurality of dielectric layers is ceramic having a perovskite structure that includes Ba and Ti and is expressed by a general formula A m BO 3 (0.995≤m≤1.010),
wherein the plurality of dielectric layers include a rare earth element which is at least one of Y, Gd, Tb, Dy and Ho as a first sub-component by 2.0 mol to 5.0 mol when converted into R 2 O 3 /2 (R represents the rare earth element), include Mg as a second sub-component by 1.0 mol to 3.0 mol when converted into MgO, include V as a third sub-component by 0.05 mol to 0.25 mol when converted into V 2 O 5 /2, include Si as a fourth sub-component by 0.5 mol to 2.5 mol when converted into SiO 2 , include an alkali earth metal element M which is at least one of Ba, Sr and Ca as a fifth sub-component by 0.1 mol to 5.0 mol when converted into MCO 3 , on a presumption that an amount of the ceramic is 100 mol,
wherein a ratio Si/V which is a ratio of the fourth sub-component with respect to the third sub-component is 30 or less.