Selective deposition of silicon oxide
Methods and apparatuses for selectively depositing oxide on an oxide surface relative to a nitride surface are described herein. Methods involve pre-treating a substrate surface using ammonia and/or nitrogen plasma and selectively depositing oxide on an oxide surface using alternating pulses of an aminosilane silicon precursor and an oxidizing agent in a thermal atomic layer deposition reaction without depositing oxide on an exposed nitride surface.
1. A method comprising:
providing a substrate having an exposed oxide surface and an exposed nitride surface, the exposed nitride surface comprising primary amine groups;
exposing the substrate to an aminosilane to selectively adsorb the aminosilane to the exposed oxide surface relative to the exposed nitride surface to form an adsorbed aminosilane on the exposed oxide surface; and
performing a thermal atomic layer deposition reaction comprising exposing the substrate to an oxidizing agent to react with the adsorbed aminosilane to form a material on the exposed oxide surface relative to the exposed nitride surface.
2. The method of claim 1 , further comprising forming the exposed nitride surface comprising primary amine groups by chemical vapor deposition at a deposition temperature greater than about 500° C.
3. The method of claim 1 , wherein the thermal atomic layer deposition reaction is performed at a deposition temperature between about 25° C. and about 400° C.
4. The method of claim 1 , wherein, during the thermal atomic layer deposition reaction, the substrate is housed in a chamber having a chamber pressure between about 10 mTorr and about 10 Torr during selective deposition of the material.
5. The method of claim 1 , wherein exposing the substrate to the aminosilane comprises flowing the aminosilane at a flow rate between about 1000 sccm and about 5000 sccm.
6. The method of claim 1 , wherein exposing the substrate to the oxidizing agent comprises flowing the oxidizing agent at a flow rate between about 1000 sccm and about 5000 sccm.
7. The method of claim 1 , wherein the aminosilane is selected from the group consisting of monoaminosilane, diaminosilane, triaminosilane, tetraaminosilane, and combinations thereof.
8. The method of claim 1 , wherein the oxidizing agent is selected from the group consisting of ozone, water, peroxide, and combinations thereof.
9. The method of claim 1 , further comprising, prior to providing the substrate, depositing nitride to form an untreated nitride surface; and exposing the untreated nitride surface to ammonia and igniting a plasma for a duration between about 1 second and about 10 seconds to form the exposed nitride surface comprising primary amine groups.
10. The method of claim 9 , wherein the plasma is ignited using a plasma power between about 150 W and about 6000 W.
11. The method of claim 1 , further comprising, prior to providing the substrate, depositing nitride to form an untreated nitride surface and exposing the untreated nitride surface to a mixture of nitrogen and ammonia and igniting a plasma for a duration between about 1 second and about 10 seconds to form the exposed nitride surface comprising primary amine groups.
12. The method of claim 11 , wherein the plasma is ignited using a plasma power between about 150 W and about 6000 W.
13. The method of claim 11 , wherein mixture of ammonia gas and nitrogen gas includes a flow rate ratio of ammonia gas flow rate to nitrogen gas flow rate between about 0.01 and about 0.1.
14. The method of claim 13 , wherein the ammonia gas flow rate is between about 10 sccm and about 100 sccm.
15. The method of claim 1 , wherein the material is formed by reacting the oxidizing agent with the adsorbed aminosilane to form the material.