IP Library › Granted Patent US 10,903,126
Granted Patent B2
US 10,903,126 · App. 16/849,291 · Granted Jan 26, 2021

Light irradiation type heat treatment method and heat treatment apparatus

Inventor: Hikaru Kawarazaki (Kyoto, JP)
Assignee: SCREEN HOLDING CO., LTD.
H01L22/12H01L21/324H01L21/67115H01L21/67248H01L21/67739H01L21/6875H01L21/68785
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Quick Facts
Patent No.
US 10,903,126
App. No.
16/849,291
Granted
Jan 26, 2021
Kind
B2
Abstract

A front surface of a semiconductor wafer is momentarily heated by irradiation with a flash of light from flash lamps. An upper radiation thermometer and a high-speed radiation thermometer unit measure a temperature of the front surface of the semiconductor wafer after the irradiation with the flash of light. The temperature data are sequentially accumulated, so that a temperature profile is acquired. An analyzer determines the highest measurement temperature of the semiconductor wafer subjected to the flash irradiation from the temperature profile to calculate a jump distance of the semiconductor wafer from a susceptor, based on the highest measurement temperature. If the calculated jump distance is greater than a predetermined threshold value, there is a high probability that the semiconductor wafer is significantly out of position, so that the transport of the semiconductor wafer to the outside is stopped.

Claims (6)

1. A method of heating a substrate by irradiating the substrate with a flash of light, said method comprising the steps of:

(a) irradiating a front surface of a substrate supported by a susceptor in a chamber with a flash of light from a flash lamp;

(b) measuring a temperature of the front surface of said substrate at least after the irradiation with said flash of light to acquire a temperature profile; and

(c) analyzing a behavior of said substrate, based on said temperature profile acquired in said step (b) excluding time at which said flash lamp emits light,

wherein, in said step (c), a periodicity or amplitude of vibrations of said substrate is determined from the periodicity or amplitude of variations in measurement temperature appearing on a predetermined range of said temperature profile.

2. The method according to claim 1 , wherein transport of said substrate out of said chamber is stopped when the periodicity or amplitude of vibrations of said substrate determined in said step (c) is greater than a predetermined threshold value.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 17, 2020
From: KAWARAZAKI, HIKARU
To: SCREEN HOLDINGS CO., LTD.
Reel/Frame 052435/0076 →
Priority Claims (1)
JP 2017-222530 · Nov 20, 2017 · national
Continuity (2)
Continuation 16188672 · Nov 13, 2018
Related Publication 20200243402A1 · Jul 30, 2020