Semiconductor device and electronic device
A semiconductor device in which a circuit and a power storage element are efficiently placed is provided. The semiconductor device includes a first transistor, a second transistor, and an electric double-layer capacitor. The first transistor, the second transistor, and the electric double-layer capacitor are provided over one substrate. A band gap of a semiconductor constituting a channel region of the second transistor is wider than a band gap of a semiconductor constituting a channel region of the first transistor. The electric double-layer capacitor includes a solid electrolyte.
1. A semiconductor device comprising:
a first transistor comprising a first gate electrode, a first source electrode, and a first drain electrode;
a first insulating film over each of the first gate electrode, the first source electrode, and the first drain electrode;
an electric double-layer capacitor over the first insulating film, and
a second insulating film over the electric double-layer capacitor; and
a second transistor over the second insulating film;
wherein the first transistor, the second transistor, and the electric double-layer capacitor are provided over one substrate,
wherein the first transistor includes a first semiconductor in a channel region,
wherein the second transistor includes a second semiconductor in a channel region,
wherein a band gap of the second semiconductor is wider than a band gap of the first semiconductor,
wherein the second transistor comprises a second gate electrode over the second semiconductor and a third gate electrode below the second semiconductor,
wherein one of a source and a drain of the second transistor is electrically connected to a current collector of the electric double-layer capacitor,
wherein the second insulating film covers the electric double-layer capacitor, and
wherein the electric double-layer capacitor includes an ionic liquid.
2. The semiconductor device according to claim 1 ,
wherein the first semiconductor includes silicon, and
wherein the second semiconductor includes an oxide semiconductor.
3. The semiconductor device according to claim 1 , wherein the electric double-layer capacitor is capable of being charged wirelessly.
4. The semiconductor device according to claim 1 , wherein the substrate is a semiconductor substrate.
5. The semiconductor device according to claim 1 , wherein the substrate is a flexible substrate.
6. An electronic device comprising:
the semiconductor device according to claim 1 ; and
at least one of a microphone, a speaker, a display portion, and an operation key.
7. The semiconductor device according to claim 1 , wherein the channel region of the first transistor and the channel region of the second transistor overlap with each other.
8. The semiconductor device according to claim 1 , wherein the one of the source and the drain of the second transistor is electrically connected to the current collector of the electric double-layer capacitor through an opening penetrating the second semiconductor.
9. A semiconductor device comprising:
a first transistor comprising a first gate electrode, a first source electrode, and a first drain electrode;
a first insulating film over each of the first gate electrode, the first source electrode, and the first drain electrode;
an electric double-layer capacitor over the first insulating film, and
a second insulating film over the electric double-layer capacitor; and
a second transistor over the second insulating film;
wherein the first transistor, the second transistor, and the electric double-layer capacitor are provided over one substrate,
wherein the first transistor includes a first semiconductor in a channel region,
wherein the second transistor includes a second semiconductor in a channel region,
wherein a band gap of the second semiconductor is wider than a band gap of the first semiconductor,
wherein one of a source and a drain of the second transistor is electrically connected to a current collector of the electric double-layer capacitor through an opening penetrating the second semiconductor,
wherein the second insulating film covers the electric double-layer capacitor, and
wherein the electric double-layer capacitor includes an ionic liquid.
10. The semiconductor device according to claim 9 ,
wherein the first semiconductor includes silicon, and
wherein the second semiconductor includes an oxide semiconductor.
11. The semiconductor device according to claim 9 , wherein the electric double-layer capacitor is capable of being charged wirelessly.
12. The semiconductor device according to claim 9 , wherein the substrate is a semiconductor substrate.
13. The semiconductor device according to claim 9 , wherein the substrate is a flexible substrate.
14. An electronic device comprising:
the semiconductor device according to claim 9 ; and
at least one of a microphone, a speaker, a display portion, and an operation key.
15. The semiconductor device according to claim 9 , wherein the channel region of the first transistor and the channel region of the second transistor overlap with each other.