IP Library › Granted Patent US 10,906,274
Granted Patent B2
US 10,906,274 · App. 16/543,043 · Granted Feb 2, 2021

Laminate substrate with sintered components

Inventors: Tarak A. Railkar (Plano, TX); Deepukumar M. Nair (Lake Mary, FL); Jeffrey Dekosky (Winter Garden, FL)
Assignee: Qorvo US, Inc.
B32B18/00B22F1/0059B22F7/04C04B35/10C04B35/468C04B35/47C04B35/581C04B41/5036C04B41/87H01L29/945H01F17/0006H01G4/12
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Quick Facts
Patent No.
US 10,906,274
App. No.
16/543,043
Granted
Feb 2, 2021
Kind
B2
Abstract

The present disclosure relates to a laminate substrate with sintered components. The disclosed laminate substrate includes a substrate body having an opening through the substrate body, a first foil layer, a sintered base component, and a sintered contact film. The first foil layer is formed underneath the substrate body, such that a first portion of the first foil layer fully covers the bottom of the opening. The sintered base component is formed within the opening and over the first portion of the first foil layer. Herein, the sintered base component has a dielectric constant between 10 and 500, or has a relative permeability greater than 5. The sintered contact film is formed over the sintered base component. The sintered base component is confined within the opening by the substrate body on sides, by the first foil layer on the bottom, and by the sintered contact film on the top.

Claims (30)

1. An apparatus comprising:

a substrate body having a first opening through the substrate body;

a first foil layer formed underneath the substrate body and extending underneath the first opening, such that a first portion of the first foil layer fully covers a bottom of the first opening;

a first sintered base component formed within the first opening and over the first portion of the first foil layer, wherein the first sintered base component has a dielectric constant between 10 and 500, or has a relative permeability greater than 5; and

a first sintered contact film formed over the first sintered base component, wherein the first sintered base component is confined within the first opening by the substrate body on sides, by the first foil layer on bottom, and by the first sintered contact film on top.

2. The apparatus of claim 1 wherein the first sintered base component has a dielectric constant between 10 and 500.

3. The apparatus of claim 2 wherein the first sintered base component comprises at least one of a group consisting of barium strontium titanate (BST), aluminum nitride, and aluminum oxide.

4. The apparatus of claim 1 wherein the first sintered base component has a relative permeability greater than 5.

5. The apparatus of claim 4 wherein the first sintered base component comprises at least one of a group consisting of iron, nickel, cobalt, and neodymium.

6. The apparatus of claim 1 wherein the first sintered contact film comprises at least one of a group consisting of copper, silver and gold.

7. The apparatus of claim 1 wherein the first sintered contact film has a thickness between 100 μm and 200 μm.

8. The apparatus of claim 1 further comprising a second sintered base component and a second sintered contact film, wherein:

the substrate body further includes a second opening through the substrate body;

the first foil layer extends underneath the second opening, such that a second portion of the first foil layer fully covers a bottom of the second opening;

the second sintered base component is formed within the second opening and over the second portion of the first foil layer, wherein the second sintered base component has a dielectric constant between 10 and 500, or has a relative permeability greater than 5; and

the second sintered contact film is formed over the second sintered base component, wherein the second sintered base component is confined within the second opening by the substrate body on sides, by the first foil layer on the bottom, and by the second sintered contact film on the top.

9. The apparatus of claim 8 wherein each of the first sintered base component and the second sintered base component has a dielectric constant between 10 and 500.

10. The apparatus of claim 9 wherein the first sintered base component and the second sintered base component have a same dielectric constant.

11. The apparatus of claim 9 wherein the first sintered base component and the second sintered base component have different dielectric constants.

12. The apparatus of claim 8 wherein each of the first sintered base component and the second sintered base component has a relative permeability greater than 5.

13. The apparatus of claim 12 wherein the first sintered base component and the second sintered base component have a same relative permeability.

14. The apparatus of claim 12 wherein the first sintered base component and the second sintered base component have different relative permeabilities.

15. The apparatus of claim 8 wherein the first sintered base component has a dielectric constant between 10 and 500, and the second sintered base component has a relative permeability greater than 5.

16. The apparatus of claim 1 further comprising a surface finish formed underneath the first foil layer, wherein the surface finish is one of a group consisting of electroless nickel electroless palladium immersion gold (ENEPIG) finish, bussed nickel gold (NiAu) finish, bussless NiAu finish, and electroless nickel immersion gold (ENIG) finish.

17. The apparatus of claim 1 further comprising a second foil layer, which is formed over the substrate body and surrounds the first sintered contact film, wherein the second foil layer does not extend over the first opening.

18. The apparatus of claim 17 wherein the first foil layer and the second foil layer are formed of copper.

19. The apparatus of claim 17 further comprising a surface finish formed over the second foil layer, wherein the surface finish is one of a group consisting of electroless nickel electroless palladium immersion gold (ENEPIG) finish, bussed nickel gold (NiAu) finish, bussless NiAu finish, and electroless nickel immersion gold (ENIG) finish.

20. The apparatus of claim 19 wherein the surface finish does not extend over the first opening, such that the first sintered contact film is exposed.

21. The apparatus of claim 19 wherein the surface finish extends over the first sintered contact film.

22. The apparatus of claim 1 wherein a top surface of the first sintered base component is below a top surface of the substrate body with a distance between 0 μm and 300 μm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 16, 2019
From: RAILKAR, TARAK A.; NAIR, DEEPUKUMAR M.; DEKOSKY, JEFFREY
To: QORVO US, INC.
Reel/Frame 050077/0367 →
Continuity (2)
Provisional Application 62760970 · Nov 14, 2018
Related Publication 20200147938A1 · May 14, 2020