Synthetic wavelengths for endpoint detection in plasma etching
Described is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. OES data is acquired by a spectrometer in a plasma etch processing chamber. The acquired time-evolving spectral data is first filtered and de-meaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. Grouping of the principal components weights into two separate groups corresponding to positive and negative natural wavelengths, creates separate signed trends (synthetic wavelengths).
1. A method for determining etch process endpoint data in a plasma processing system, the method comprising:
performing plasma etch process runs in a plasma processing chamber of an etch processing system;
acquiring optical emission spectroscopy (OES) data from the plasma processing chamber during one or more etching processes;
performing a multivariate data analysis on the OES data to generate synthetic OES data from the OES data by grouping emitted wavelengths; and
using the synthetic OES data for later use in an in-situ determination of the etch process endpoint.
2. The method of claim 1 , where the generating synthetic OES data comprises obtaining a transformed OES data vector [T], wherein
[ T ]=([ X ]−[ S avg])[ P ], where
[X] is an OES data matrix, [P] is a weights vector, and [Savg] is an n×m mean OES data matrix, whose each element is computed as an average value of n elements of the corresponding column of [X]avg, which is an n×m average OES data matrix, whose each element is computed as an average of corresponding elements of the OES data matrix [X] over k etch process runs, n corresponding to instants in time when OES data is taken and m corresponding to the number of measured light intensities in the plasma processing chamber by a detector.
3. The method of claim 2 , wherein
the generating synthetic OES data comprises grouping wavelengths corresponding to positive and negative weights.
4. The method of claim 3 , wherein
the weights vector [P] is determined by:
calculating eigenvectors and eigenvalues of a covariance matrix associated with matrix [X];
ordering the eigenvalues in descending order, the eigenvalues representing the weights vector [P]; and
setting a positive weights vector [P+] by setting all negative components in [P] to zero and setting a negative weights vector [P−] by setting all positive components in [P] to zero and taking the absolute value thereof.
5. The method according to claim 4 , further comprising:
obtaining a transformed OES data vector [T+] or [T−], wherein
[ T +]=([ X ]−[ S avg])[ P +], [ T −]=([ X ]−[ S avg])[ P −].
6. The method according to claim 5 , further comprising:
selecting a functional form involving elements of the transformed OES data vector [T+], or [T−] and computing a time evolution of the selected functional form.
7. The method according to claim 6 , further comprising:
computing a time derivative of the selected functional form and computing a time evolution of the time derivative of the selected functional form.
8. The method according to claim 7 , wherein
the functional form comprises [T+], [T−], the ratio [T+]/[T−], a power of the ratio
[T+]/[T−], or a single element of the transformed OES data vector [T+] or [T−] or any mathematical form using [T+] and/or [T−].
9. The method of claim 1 , further comprising
performing k plasma etch process runs in the plasma processing chamber, where k is an integer greater than zero, each of the k plasma etch process runs comprising:
loading a substrate to be processed to the plasma processing chamber, the plasma processing chamber comprising a spectrometer having a detector comprising m pixels, each pixel corresponding to a different light wavelength;
forming a plasma in the plasma etch processing chamber; and
acquiring OES data from the plasma processing chamber during one or more etching processes, and forming an OES data matrix [X] for each of the k plasma etch process runs.
10. The method of claim 9 , further comprising
computing an n×m average OES data matrix [X]avg, wherein each element is computed as an average of corresponding elements of the OES matrix [X] over the k etch process runs;
filtering noise from the average OES data matrix [X]avg;
truncating each OES data matrix [X] and [X]avg, where data acquired during plasma startup and for times beyond an etch process endpoint is discarded;
calculating an n×m mean OES data matrix [Savg], where each element is computed as an average value of n elements of the corresponding column of [X]avg;
subtracting [Savg] from matrix [X] for each k, to de-mean the OES data.
11. The method according to claim 2 , wherein
after forming the OES data matrix [X] for each of the plasma etch process runs, and before computing the n×m average OES data matrix [X]avg, the method normalizes the OES data matrix [X].
12. The method according to claim 11 , wherein
the OES data matrix normalization comprises selecting a reference snapshot at time R, xR,j, and then dividing every OES data by the reference snapshot, xi,j=xi,j/xR,j.
13. The method according to claim 12 , wherein
the reference snapshot is a single time snapshot or a snapshot averaged over a period of time.
14. The method according to claim 11 , wherein
the OES data matrix normalization comprises selecting a reference wavelength λR, and then dividing every OES data by the intensity at the reference wavelength xi,j=xi,j/xi,R.
15. The method according to claim 14 , wherein
the reference wavelength is a single wavelength or an average of band wavelengths.
16. A method for determining etch process endpoint data in a plasma processing system, the method comprising:
performing plasma etch process runs in a plasma processing chamber of an etch processing system;
acquiring optical emission spectroscopy (OES) data from the plasma processing chamber during one or more etching processes;
performing a multivariate data analysis on the OES data to generate synthetic OES data from the OES data by grouping emitted wavelengths corresponding to positive and negative weights associated with natural wavelengths; and
using the synthetic OES data for later use in an in-situ determination of the etch process endpoint.
17. The method of claim 16 , wherein
the multivariate data analysis is performed using independent component analysis.
18. The method of claim 16 , wherein
the multivariate data analysis is performed using a supervised multivariate data analysis method, the supervised multivariate data analysis method including support vector machine regression.
19. The method of claim 16 , further comprising:
obtaining a transformed OES data vector [T+] or [T−], wherein
[ T +]=([ X ]−[ S avg])[ P +], [ T −]=([ X ]−[ S avg])[ P −], wherein
[X] is an OES data matrix, [P+] is a positive weights vector, [P−] is a negative weights vector, and [Savg] is an n×m mean OES data matrix, whose each element is computed as an average value of n elements of the corresponding column of [X]avg, which is an n×m average OES data matrix, whose each element is computed as an average of corresponding elements of the OES data matrix [X] over k etch process runs, n corresponding to instants in time when OES data is taken and m corresponding to the number of measured light intensities in the plasma processing chamber by a detector.
20. The method according to claim 19 , further comprising:
selecting a functional form involving elements of the transformed OES data vector [T+], or [T−], and computing a time evolution of the selected functional form.
21. The method according to claim 20 , further comprising:
computing a time derivative of the selected functional form and computing a time evolution of the time derivative of the selected functional form.
22. The method according to claim 21 , wherein
the functional form comprises [T+], [T−], the ratio [T+]/[T−], a power of the ratio
[T+]/[T−], or a single element of the transformed OES data vector [T+] or [T−] or any mathematical form using [T+] and/or [T−].