Silicon wafer manufacturing method
Provided is a silicon wafer manufacturing method capable of reducing the warpage of the wafer occurring during a device process and allowing the subsequent processes, which have been suffered from problems due to severe warping of the wafer, to be carried out without problems and its manufacturing method. A silicon wafer manufacturing method according to the present invention is provided with calculating a target thickness of the silicon wafer required for ensuring a warpage reduction amount of a silicon wafer warped during a device process from a relationship between an amount of warpage of a silicon wafer and a thickness thereof occurring due to application of the same film stress to a plurality of silicon wafers having mutually different thicknesses; and processing a silicon single crystal ingot to thereby manufacture silicon wafers having the target thickness.
1. A silicon wafer manufacturing method comprising:
calculating a target thickness of a silicon wafer required for ensuring a warpage reduction amount of the silicon wafer warped during a device process from a relationship between an amount of warpage of a silicon wafer and a thickness of the silicon wafer occurring due to application of the same film stress to a plurality of silicon wafers having mutually different thicknesses; and
processing a silicon single crystal ingot to thereby manufacture silicon wafers having the target thickness.
2. The silicon wafer manufacturing method as claimed in claim 1 calculates a relational formula between the warpage reduction amount of the silicon wafer warped during a device process and the target thickness of the silicon wafer from the relationship between the amount of warpage of the silicon wafer and the thickness thereof, and calculates the target thickness of the silicon wafer by substituting the warpage reduction amount into the relational formula.
3. The silicon wafer manufacturing method as claimed in claim 2 , wherein the relational formula satisfies y=A(x/t−1), where y is the warpage reduction amount of the silicon wafer, x is the target thickness of the silicon wafer, t is a standard thickness of the silicon wafer, and A is a constant.
4. The silicon wafer manufacturing method as claimed in claim 3 , wherein the constant A is a value according to the amount of warpage of the silicon wafer occurring due to a device process.
5. The silicon wafer manufacturing method as claimed in claim 3 , wherein when the shape of the warp of the silicon wafer occurring due to a difference in the stress component of the films laminated during device formation is a bowl shape, the constant A is equal to or less than 900.
6. The silicon wafer manufacturing method as claimed in claim 3 , wherein when the shape of the warp of the silicon wafer occurring due to a difference in the stress component of the films laminated during device formation is a saddle shape, the constant A is equal to or less than 1500.
7. The silicon wafer manufacturing method as claimed in claim 1 , wherein the relationship between the amount of warpage of the silicon wafer and the thickness thereof includes the relationship between the amount of warpage of a silicon wafer having the standard thickness t and the standard thickness t.
8. The silicon wafer manufacturing method as claimed in claim 1 , wherein the device is a 3DNAND flash memory.