Semiconductor device with stacked die device
The present disclosure provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a first die, a second die, a first redistribution layer, a second redistribution layer, a first interconnect structure, and a second interconnect structure. The second die is stacked on the first die, the first redistribution layer is disposed between a first substrate of the first die and a second ILD layer of the second die, and the second redistribution layer is disposed on a second substrate of the second die. The first interconnect structure connects the first redistribution layer to one of first metal lines of the first die, and the second interconnect structure connects the second redistribution layer to one of the second metal lines in the second ILD layer.
1. A semiconductor device, comprising:
a first die comprising a first substrate, a first inter-layer dielectric (ILD) layer disposed on a front surface of the first substrate, and a plurality of first metal lines disposed in the first ILD layer;
a second die stacked on the first die and comprising a second substrate, a second ILD layer disposed on a second front surface of the second substrate, and a plurality of second metal lines disposed in the second ILD layer;
a first redistribution layer between the first substrate and the second ILD layer;
a second redistribution layer disposed on the second substrate;
a first interconnect structure penetrating through the first substrate and into the first ILD layer to connect the first redistribution layer to one of the first metal lines; and
a second interconnect structure penetrating through the second substrate and into the second ILD layer to connect the second redistribution layer to one of the second metal lines;
wherein the first redistribution layer has a first thickness, and the second redistribution layer has a second thickness less than the first thickness.
2. The semiconductor device of claim 1 , wherein the first redistribution layer is aligned with the first interconnect structure and is offset from the second metal line when viewed in a cross-sectional view.
3. The semiconductor device of claim 1 , wherein the second metal line physically connected to the first redistribution layer is exposed to the second ILD layer.
4. The semiconductor device of claim 1 , further comprising at least one solder bump electrically coupled to the second redistribution layer.
5. The semiconductor device of claim 4 , further comprising at least one under bump metallization (UBM) member sandwiched between the solder bump and the second redistribution layer.
6. The semiconductor device of claim 1 , further comprising a carrier bonded to the first die through a bonding layer.
7. The semiconductor device of claim 6 , wherein the bonding layer comprises a native dielectric film grown on the carrier and a deposited dielectric layer on the first ILD layer.