Semiconductor device
View Patent ↗A semiconductor device may include a clock driver including a first gate line, a second gate line, a third gate line and a fourth gate line each extending in a first direction, the first gate line and the second gate line each configured to receive a clock signal, and the third gate line and the fourth gate line each configured to receive an inverted clock signal; a master latch circuit overlapping the first gate line and the third gate line such that the master latch circuit receive the clock signal from the first gate line and receive the inverted clock signal from the third gate line; and a slave latch circuit overlapping the second gate line and the fourth gate line such that the slave latch circuit receives the clock signal from the second gate line, and receives the inverted clock signal from the fourth gate line.
1. A semiconductor device comprising:
a clock driver configured to output a clock signal and an inverted clock signal;
a first master latch circuit adjacent to the clock driver in a first direction;
a first slave latch circuit adjacent to the clock driver in the first direction;
a first gate line continuously extending in first direction across the clock driver and the first master latch circuit in the first direction; and
a second gate line continuously extending in first direction across the clock driver and the first slave latch circuit in the first direction.
2. The semiconductor device of claim 1 , wherein
the first gate line includes a first sub-gate line and a second sub-gate line, the first sub-gate line configured to receive the clock signal, and the second sub-gate line configured to receive the inverted clock signal, and
the second gate line includes a third sub-gate line and a fourth sub-gate line, the third sub-gate line configured to receive the clock signal, and the fourth sub-gate line configured to receive the inverted clock signal.
3. The semiconductor device of claim 2 , wherein the first master latch circuit is on a first side of the clock driver, and the semiconductor device further comprises:
a second master latch circuit adjacent to the clock driver in the first direction such that the second master latch circuit is on a second side of the clock driver; and
a second slave latch circuit adjacent to the clock driver in the first direction such that the second slave latch circuit is on the second side of the clock driver.
4. The semiconductor device of claim 3 , wherein
the first sub-gate line and the second sub-gate line cross the second master latch circuit in the first direction, and
the third sub-gate line and the fourth sub-gate line cross the second slave latch circuit in the first direction.
5. The semiconductor device of claim 3 , wherein
the first master latch circuit and the first slave latch circuit are sequentially arranged in a second direction, and
the second master latch circuit and the second slave latch circuit are sequentially arranged in the second direction, the second direction being orthogonal to the first direction.
6. The semiconductor device of claim 3 , wherein the clock driver comprises:
a first power rail and a second power rail each extending in a second direction such that the first power rail and the second power rail are spaced apart from each other in the first direction, wherein
each of the first gate line and the second gate line continuous extend in first direction across the first power rail and the second power rail.
7. The semiconductor device of claim 6 , wherein
the first master latch circuit, the first slave latch circuit, and the clock driver are each connected to the first power rail, and
the second master latch circuit, the second slave latch circuit, and the clock driver are each connected to the second power rail.
8. The semiconductor device of claim 7 , wherein
the first power rail is configured to receive a power supply voltage, and
the second power rail is configured to receive a ground voltage.
9. The semiconductor device of claim 1 , wherein the clock driver is associated with a first row of the semiconductor device and the first master latch circuit and the first slave latch circuit are associated with a second row of the semiconductor device.
10. The semiconductor device of claim 9 , wherein the first gate line and the second gate line continuous extend in first direction between the first row and the second row to cross both the clock driver and respective ones of the first master latch circuit and the first slave latch circuit such that the first gate line and the second gate line provide inter-cell wiring.