Solid state imaging device and imaging system
A solid state imaging device as an embodiment includes: a plurality of pixels each including at least one photoelectric conversion unit and an amplification transistor having a first input node electrically connected to the photoelectric conversion unit, a first primary node, and a second primary node; a transistor having a second input node, a third primary node, and a fourth primary node and having the same polarity as the amplification transistor; at least one signal line to which the first primary node of each of the plurality of pixels is electrically connected; and a current source electrically connected to the signal line, and a power source voltage is applied to the third primary node, the fourth primary node and the second primary node are electrically connected to each other, and the first primary node and the second input node are electrically connected to each other.
1. A solid state imaging device comprising:
a plurality of pixels each comprising at least one photoelectric conversion unit and an amplification transistor having a first input node electrically connected to the photoelectric conversion unit, a first primary node, and a second primary node;
a first transistor having a second input node, a third primary node, and a fourth primary node and having the same polarity as the amplification transistor;
at least one signal line to which the first primary node of each of the plurality of pixels is electrically connected; and
a current source electrically connected to the signal line,
wherein a power source voltage is applied to the third primary node, the fourth primary node and the second primary node are electrically connected to each other, and the first primary node and the second input node are electrically connected to each other, and
wherein a first wiring that electrically connects the first primary node of the amplification transistor to the second input node of the first transistor intersects with at least a part of an electrode of the first input node of the amplification transistor in a planar view.
2. The solid state imaging device according to claim 1 , wherein each of the plurality of pixels has the first transistor.
3. The solid state imaging device according to claim 2 ,
wherein each of the plurality of pixels further comprises:
a selection transistor provided between the first primary node of the amplification transistor and the signal line;
a floating diffusion region electrically connected to the photoelectric conversion unit;
a second wiring that electrically connects the floating diffusion region to the first input node of the amplification transistor; and
a third wiring electrically connected to an input node of the selection transistor,
wherein at least a part of the first wiring is located between the second wiring and the third wiring in a planar view.
4. A solid state imaging device comprising:
a plurality of pixels each comprising at least one photoelectric conversion unit and an amplification transistor having a first input node electrically connected to the photoelectric conversion unit, a first primary node, and a second primary node;
a first transistor having a second input node, a third primary node, and a fourth primary node and having the same polarity as the amplification transistor;
at least one signal line to which the first primary node of each of the plurality of pixels is electrically connected;
a current source electrically connected to the signal line; and
a feedback circuit operated by a drive current supplied from the current source,
wherein a first wiring that electrically connects the first primary node of the amplification transistor to the second input node of the first transistor intersects with at least a part of an electrode of the first input node of the amplification transistor in a planar view.
5. The solid state imaging device according to claim 4 , wherein the feedback circuit is provided for each of the pixels.
6. The solid state imaging device according to claim 5 ,
wherein each of the plurality of pixels further comprises:
a selection transistor provided between the first primary node of the amplification transistor and the signal line;
a floating diffusion region electrically connected to the photoelectric conversion unit;
a second wiring that electrically connects the floating diffusion region to the first input node of the amplification transistor; and
a third wiring electrically connected to an input node of the selection transistor,
wherein at least a part of the first wiring is located between the second wiring and the third wiring in a planar view.
7. A solid state imaging device comprising:
a plurality of pixels each comprising at least one photoelectric conversion unit and an amplification transistor having a first input node electrically connected to the photoelectric conversion unit, a first primary node, and a second primary node;
a first transistor having a second input node, a third primary node, and a fourth primary node and having the same polarity as the amplification transistor;
at least one signal line to which the first primary node of each of the plurality of pixels is electrically connected; and
a current source electrically connected to the signal line,
wherein a power source voltage is applied to the third primary node, the fourth primary node and the second primary node are electrically connected to each other, and the first primary node and the second input node are electrically connected to each other, and
further comprising a reset transistor that resets the first input node of the amplification transistor to a reset voltage, wherein
−Δ V 2−Δ V 1≥ Vth 1
is satisfied, where a threshold voltage of the first transistor is Vth1, a voltage determined by a current value and a conductance of the first transistor is ΔV1, and a voltage determined by a current value and a conductance of the amplification transistor is ΔV2.
8. The solid state imaging device according to claim 7 , wherein each of the plurality of pixels has the first transistor.
9. The solid state imaging device according to claim 8 , wherein a first wiring that electrically connects the first primary node of the amplification transistor to the second input node of the first transistor intersects with at least a part of an electrode of the first input node of the amplification transistor in a planar view.
10. The solid state imaging device according to claim 9 ,
wherein each of the plurality of pixels further comprises:
a selection transistor provided between the first primary node of the amplification transistor and the signal line;
a floating diffusion region electrically connected to the photoelectric conversion unit;
a second wiring that electrically connects the floating diffusion region to the first input node of the amplification transistor; and
a third wiring electrically connected to an input node of the selection transistor,
wherein at least a part of the first wiring is located between the second wiring and the third wiring in a planar view.
11. A solid state imaging device comprising:
a plurality of pixels each comprising at least one photoelectric conversion unit and an amplification transistor having a first input node electrically connected to the photoelectric conversion unit, a first primary node, and a second primary node;
a first transistor having a second input node, a third primary node, and a fourth primary node and having the same polarity as the amplification transistor;
at least one signal line to which the first primary node of each of the plurality of pixels is electrically connected;
a current source electrically connected to the signal line; and
a feedback circuit operated by a drive current supplied from the current source,
wherein the current source supplies a drive current to the amplification transistor,
wherein the feedback circuit comprises the first transistor,
wherein the second input node of the first transistor is electrically connected to the first primary node of the amplification transistor, the fourth primary node of the first transistor is electrically connected to the second primary node of the amplification transistor, and a power source voltage is applied to the third primary node of the first transistor,
wherein the first transistor performs a source follower operation,
wherein a polarity of the first transistor is the same as a polarity of the amplification transistor, and the first transistor is of a depression type,
further comprising a reset transistor that resets the first input node of the amplification transistor to a reset voltage, wherein
−Δ V 2−Δ V 1≥ Vth 1
is satisfied, where a threshold voltage of the first transistor is Vth1, a voltage determined by a current value and a conductance of the first transistor is ΔV1, and a voltage determined by a current value and a conductance of the amplification transistor is ΔV2.
12. The solid state imaging device according to claim 11 , wherein the feedback circuit is provided for each of the pixels.
13. The solid state imaging device according to claim 12 , wherein a first wiring that electrically connects the first primary node of the amplification transistor to the second input node of the first transistor intersects with at least a part of an electrode of the first input node of the amplification transistor in a planar view.
14. The solid state imaging device according to claim 13 ,
wherein each of the plurality of pixels further comprises:
a selection transistor provided between the first primary node of the amplification transistor and the signal line;
a floating diffusion region electrically connected to the photoelectric conversion unit;
a second wiring that electrically connects the floating diffusion region to the first input node of the amplification transistor; and
a third wiring electrically connected to an input node of the selection transistor,
wherein at least a part of the first wiring is located between the second wiring and the third wiring in a planar view.