Micro-electro-mechanical system piezoelectric transducer and method for manufacturing the same
An MEMS piezoelectric transducer and a method for manufacturing the same are provided. The first substrate includes a first base, at least one conductive layer, a signal processing circuit and/or a driving circuit arranged on a side of the first base, where the signal processing circuit and/or the driving circuit is electrically connected to the at least one conductive layer. The second substrate includes a second base, a first electrode arranged on a side of the second base, and a piezoelectric layer arranged on the first electrode. A side of the first substrate where the at least one conductive layer is arranged is attached and fixed to a side of the second substrate where the first electrode and the piezoelectric layer are arranged. The first electrode and the at least one conductive layer are electrically connected through a conductive through via.
1. A method for manufacturing a micro-electro-mechanical system (MEMS) piezoelectric transducer, comprising:
preparing a first substrate comprising a first base, at least one conductive layer, and a signal processing circuit and/or a driving circuit, wherein the at least one conductive layer, the signal processing circuit and/or the driving circuit are arranged on a side of the first base;
preparing a second substrate;
forming a first electrode on a side of the second substrate and forming a piezoelectric material layer on the first electrode;
bonding a side of the first substrate where the at least one conductive layer is arranged to a side of the second substrate to form a substrate bonding interface, wherein a cavity corresponding to the first electrode is provided between the first substrate and the second substrate;
and
forming a conductive through via for electrically connecting the first electrode with the at least one conductive layer.
2. The method according to claim 1 , wherein a second electrode is provided on the piezoelectric layer or in the at least one conductive layer, and the second electrode corresponds to the first electrode.
3. The method according to claim 1 , further comprising:
forming a first bonding layer on the side of the first substrate where the at least one conductive layer is arranged or on a side of the second substrate facing the first substrate, wherein
the first substrate and the second substrate are bonded together through the first bonding layer; and
the first bonding layer comprises an insulating structure.
4. The method according to claim 1 , further comprising:
forming a first bonding layer on the side of the first substrate where the at least one conductive layer is arranged, and
forming a second bonding layer on a side of the second substrate facing the first substrate, wherein
the first substrate and the second substrate are bonded together through the first bonding layer and the second bonding layer, and
at least one of the first bonding layer and the second bonding layer comprises an insulating structure.
5. The method according to claim 1 , wherein the forming the conductive through via for electrically connecting the first electrode with the at least one conductive layer comprises:
forming a first conductive through via extending from a side of the second substrate facing away from the first substrate to the at least one conductive layer; and
forming a second conductive through via extending from the side of the second substrate facing away from the first substrate to the first electrode, wherein
the first conductive through via and the second conductive through via are electrically connected directly, or the first conductive through via and the second conductive through via are electrically connected through a conductive connection structure arranged on the side of the second substrate facing away from the first substrate.
6. The method according to claim 1 , before the bonding a side of the first substrate where the at least one conductive layer is arranged to a side of the second substrate, further comprising:
forming a first opening on the side of the first substrate where the at least one conductive layer is arranged and/or a side of the second substrate facing the first substrate, wherein
the first opening forms a cavity between the first substrate and the second substrate after the first substrate and the second substrate are bonded together.
7. The method according to claim 1 , further comprising:
forming a second opening on a side of the first substrate facing away from the second substrate, wherein a position of the second opening corresponds to a position of the first electrode.
8. The method according to claim 1 , wherein the second substrate comprises a base, an insulating layer on a surface of the base and a semiconductor layer on a surface of the insulating layer, and the method further comprises:
forming the first electrode using the semiconductor layer, or forming the first electrode on the semiconductor layer.
9. The method according to claim 1 , further comprising:
forming a third electrode on the side of the first substrate where the at least one conductive layer is arranged, wherein the third electrode is a self-test electrode, and a position of the self-test electrode corresponds to the position of the first electrode.
10. The method according to claim 1 , further comprising:
forming a third opening extending from a side of the second substrate facing away from the first substrate to the cavity.
11. The method according to claim 1 , wherein
the operation of forming a first electrode on a side of the second substrate and forming a piezoelectric material layer on the first electrode is performed before the operation of bonding a side of the first substrate where the at least one conductive layer is arranged to a side of the second substrate, wherein the side of the first substrate where the at least one conductive layer is arranged is bonded to the side of the second substrate where the first electrode and the piezoelectric material layer are formed; or
the operation of forming a first electrode on a side of the second substrate and forming a piezoelectric material layer on the first electrode is performed after the operation of bonding a side of the first substrate where the at least one conductive layer is arranged to a side of the second substrate, wherein the side of the first substrate where the at least one conductive layer is arranged is bonded to a side of the second substrate opposite to the side where the first electrode and the piezoelectric material layer are formed.
12. A micro-electro-mechanical system (MEMS) piezoelectric transducer, comprising:
a first substrate and a second substrate, wherein
the first substrate comprises a first base, at least one conductive layer, a signal processing circuit and/or a driving circuit, wherein the at least one conductive layer, the signal processing circuit and/or the driving circuit are arranged on a side of the first base;
a first electrode is formed on a side of the second substrate and a piezoelectric layer is arranged on the first electrode;
a side of the first substrate where the at least one conductive layer is arranged is bonded to a side of the second substrate to form a substrate bonding interface;
a cavity corresponding to the first electrode is provided between the first substrate and the second substrate; and
a conductive through via for electrically connecting the first electrode with the at least one conductive layer is provided.
13. The MEMS piezoelectric transducer according to claim 12 , wherein
the first substrate further comprises a first bonding layer arranged on the side of the first substrate where the at least one conductive layer is arranged, or the second substrate further comprises a first bonding layer arranged on a side of the second substrate facing the first substrate,
the first substrate and the second substrate are bonded together through the first bonding layer; and
the first bonding layer comprises an insulating structure.
14. The MEMS piezoelectric transducer according to claim 12 , wherein
the first substrate further comprises a first bonding layer arranged on the side of the first substrate where the at least one conductive layer is arranged, and the second substrate further comprises a second bonding layer arranged on the side of the second substrate facing the first substrate,
the first substrate and the second substrate are bonded together through the first bonding layer and the second bonding layer, and
at least one of the first bonding layer and the second bonding layer comprises an insulating structure.
15. The MEMS piezoelectric transducer according to claim 12 , wherein
the conductive through via comprises a first conductive through via and a second conductive through via,
the first conductive through via extends from a side of the second substrate facing away from the first substrate to the at least one conductive layer, and the second conductive through via extends from the side of the second substrate facing away from the first substrate to the first electrode; and
the first conductive through via and the second conductive through via are electrically connected directly, or the first conductive through via and the second conductive through via are electrically connected through a conductive connection structure arranged on the side of the second substrate facing away from the first substrate.
16. The MEMS piezoelectric transducer according to claim 12 , wherein
a first opening is provided on the side of the first substrate where the at least one conductive layer is arranged and/or on the side of the second substrate facing the first substrate, and
the first opening between the first substrate and the second substrate forms the cavity.
17. The MEMS piezoelectric transducer according to claim 12 , wherein a second opening is provided on a side of the first substrate facing away from the second substrate, and a position of the second opening corresponds to a position of the first electrode.
18. The MEMS piezoelectric transducer according to claim 12 , wherein
a third electrode is provided on a side of the first substrate where the at least one conductive layer is arranged, the third electrode is a self-test electrode, and a position of the third electrode corresponds to the position of the first electrode.
19. The MEMS piezoelectric transducer according to claim 12 , wherein a third opening is provided on a side of the second substrate facing away from the first substrate, and the third opening extends from the side of the second substrate facing away from the first substrate to the cavity.
20. The MEMS piezoelectric transducer according to claim 12 , wherein:
the side of the first substrate where the at least one conductive layer is arranged is bonded to the side of the second substrate where the first electrode and the piezoelectric material layer are formed; or
the side of the first substrate where the at least one conductive layer is arranged is bonded to a side of the second substrate opposite to the side where the first electrode and the piezoelectric material layer are formed.
21. The MEMS piezoelectric transducer according to claim 12 , wherein
the second substrate comprises a second base, and the first electrode is arranged on a side of the second base; and
the distance between the second base and the first substrate is greater than the distance between the piezoelectric layer and the first substrate.
22. The MEMS piezoelectric transducer according to claim 21 , wherein the second base in a region of the second substrate corresponding to the first electrode has a zero or partial thickness.