Plasma processing apparatus
A plasma processing apparatus includes a processing chamber, a high frequency power supply and a load variation stabilization circuit. The high frequency power supply is configured to supply a high frequency power to the processing chamber and generate plasma inside the processing chamber. The load variation stabilization circuit is connected in parallel with the processing chamber at a connection portion provided between the high frequency power supply and the processing chamber. The load variation stabilization circuit is configured to suppress variation in a load impedance when viewing a downstream side from the connection portion.
1. A plasma processing apparatus comprising:
a processing chamber;
a high frequency power supply configured to supply a high frequency power to the processing chamber and generate plasma inside the processing chamber; and
a load variation stabilization circuit connected in parallel with the processing chamber at a connection portion provided between the high frequency power supply and the processing chamber and configured to suppress variation in a load impedance when viewing a downstream side from the connection portion,
wherein a sign of a reactance of the load variation stabilization circuit is the same as a sign of a reactance when viewing the processing chamber from the connection portion.
2. The plasma processing apparatus of claim 1 , wherein both of the sign of the reactance of the load variation stabilization circuit and the sign of the reactance when viewing the processing chamber from the connection portion are positive.
3. The plasma processing apparatus of claim 1 , wherein the reactance of the load variation stabilization circuit is within a range of 0.5 to 1.5 times of a reactance when viewing the processing chamber from the connection portion.
4. The plasma processing apparatus of claim 1 , wherein the high frequency power supply is a frequency variable power supply having a function of performing matching with the load impedance by changing an output frequency.
5. The plasma processing apparatus of claim 4 , wherein an impedance of the load variation stabilization circuit and a load impedance when viewing the processing chamber side from the connection portion are set such that parallel resonance does not occur with respect to a matching frequency.
6. The plasma processing apparatus of claim 1 , wherein the load variation stabilization circuit includes at least one of a capacitor and a coil.
7. The plasma processing apparatus of claim 6 , wherein the load variation stabilization circuit includes the capacitor and the coil connected in series or in parallel.