Wafer producing apparatus
A wafer producing apparatus for producing an SiC wafer from a single-crystal SiC ingot includes an ingot grinding unit, a laser applying unit that applies a pulsed laser beam having a wavelength that is transmittable through the single-crystal SiC ingot while positioning a focal point of the pulsed laser beam in the single-crystal SiC ingot at a depth corresponding to the thickness of the SiC wafer to be produced from an upper surface of the single-crystal SiC ingot, thereby forming a peel-off layer in the single-crystal SiC ingot, a wafer peeling unit that peels the SiC wafer off the peel-off layer in the single-crystal SiC ingot, and a delivery unit assembly that delivers the single-crystal SiC ingot between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.
1. A wafer producing apparatus for producing an SiC wafer from a single-crystal SiC ingot, comprising:
an ingot grinding unit that includes a first holding table for holding the single-crystal SiC ingot thereon and a grinding wheel for grinding and planarizing an upper surface of the single-crystal SiC ingot held on the first holding table;
a laser applying unit that includes a second holding table for holding the single-crystal SiC ingot thereon and a laser oscillator for applying a pulsed laser beam having a wavelength that is transmittable through the single-crystal SiC ingot while positioning a focal point of the pulsed laser beam in the single-crystal SiC ingot at a depth corresponding to the thickness of the SiC wafer to be produced from the upper surface of the single-crystal SiC ingot held on the second holding table, thereby forming a peel-off layer in the single-crystal SiC ingot;
a wafer peeling unit that includes a third holding table for holding the single-crystal SiC ingot thereon and a wafer peeling member for holding the upper surface of the single-crystal SiC ingot held on the third holding table and peeling the SiC wafer off the peel-off layer;
a wafer housing unit configured to house the SiC wafer that has been peeled off; and
a delivery unit assembly configured to deliver the single-crystal SiC ingot between the ingot grinding unit, the laser applying unit, and the wafer peeling unit,
said delivery unit assembly including a delivery unit having a guide mechanism and a block movably attached to said guide mechanism, said block including a grip member and a suction member.
2. The wafer producing apparatus according to claim 1 , further comprising:
an ingot housing unit configured to house the single-crystal SiC ingot therein, wherein the delivery unit assembly delivers the single-crystal SiC ingot from the ingot housing unit to the laser applying unit.
3. The wafer producing apparatus according to claim 1 , further comprising:
an ingot cleaning unit configured to clean the single-crystal SiC ingot,
wherein the delivery unit assembly delivers the single-crystal SiC ingot from the ingot grinding unit to the ingot cleaning unit and also delivers the single-crystal SiC ingot from the ingot cleaning unit to the laser applying unit.
4. The wafer producing apparatus according to claim 1 , wherein said block includes an additional grip member.
5. The wafer producing apparatus according to claim 4 , wherein said additional grip member includes a pair of semi-annular grippers that move between a releasing position and a gripping position.
6. The wafer producing apparatus according to claim 4 , wherein said block includes an additional suction member.
7. The wafer producing apparatus according to claim 1 , wherein said block includes an additional suction member.
8. The wafer producing apparatus according to claim 1 , wherein said grip member includes a pair of semi-annular grippers that move between a releasing position and a gripping position.
9. The wafer producing apparatus according to claim 1 , wherein said suction member includes a multi-joint arm.