Electronic device including redistribution layer pad having a void
An electronic device is disclosed. In one example, the electronic device includes a solder ball, a dielectric layer comprising an opening, and a redistribution layer (RDL) comprising an RDL pad connected with the solder ball. The RDL pad including at least one void, the void being disposed at least in partial in an area of the RDL pad laterally outside of the opening of the dielectric layer.
1. An electronic device, comprising:
a solder ball;
a dielectric layer comprising an opening; and
a redistribution layer (RDL) comprising an RDL pad electrically connected with the solder ball within the opening;
the RDL pad comprising at least one void opening through the RDL pad, the at least one void opening being disposed at least in partial in an area of the RDL pad laterally outside of the opening of the dielectric layer, the at least one void opening comprising either one circumferential circular slot or two semi-circular slots, wherein the one circumferential circular slot includes an inner portion connected with an outer portion of the RDL pad by one constricted area which functions as a cantilever spring that allows a rotational movement of the inner portion of the one circumferential circular slot around an axis which is perpendicular to the RDL pad, and wherein the two semi-circular slots include an inner portion connected with an outer portion of the RDL pad by two constricted areas which function as torsional springs that allow a rotational movement of the inner portion of the two semi-circular void openings around an axis which is perpendicular to the RDL pad.
2. The electronic device according to claim 1 , further comprising:
the at least one void opening being disposed completely in an area of the RDL pad laterally outside of the opening of the dielectric layer.
3. The electronic device according to claim 1 , further comprising
an under bump metal (UBM) layer pad connected with the solder ball, wherein
the at least one void opening being disposed at least in partial in an area of the RDL pad laterally outside of the UBM layer pad.
4. The electronic device according to claim 3 , further comprising:
the at least one void opening being disposed completely in an area of the RDL pad laterally outside of the UBM layer pad.
5. The electronic device according to claim 1 , further comprising:
the at least one void opening not being disposed in an area of the RDL pad laterally inside of the opening of the dielectric layer.
6. The electronic device according to claim 1 , further comprising:
the slot or the slots of the at least one void opening having a length and a width, wherein the length is greater than the width.
7. The electronic device according to claim 6 , further comprising:
the slot or the slots comprise a width in a range from 5 μm to 100 μm.
8. The electronic device according to claim 6 , further comprising:
the slot or the slots being arranged along a circular arc segment.
9. The electronic device according to claim 3 , further comprising:
the UBM layer pad is disposed on the RDL pad in the opening of the dielectric layer.
10. The electronic device according to claim 1 , further comprising:
the RDL comprising a redistribution line connected to the RDL pad.
11. An electronic device comprising:
a solder ball;
a dielectric layer comprising an opening; and
a metal layer pad electrically connected with the solder ball through the opening, the metal layer pad comprising at least one void opening through the metal layer pad, the at least one void opening disposed laterally outside of the opening of the dielectric layer, the at least one void opening being formed as at least one slot, the at least one slot comprising either one circumferential circular slot or two semi-circular slots, wherein the one circumferential circular slot includes an inner portion connected with an outer portion of the metal layer pad by one constricted area which functions as a cantilever spring that allows a rotational movement of the inner portion of the one circumferential circular slot around an axis which is perpendicular to the metal layer pad, and wherein the two semi-circular slots include an inner portion connected with an outer portion of the metal layer pad by two constricted areas which function as torsional springs that allow a rotational movement of the inner portion of the two semi-circular void openings around an axis which is perpendicular to the metal layer pad.
12. The electronic device according to claim 11 , further comprising:
an under bump metal (UBM) layer pad connected between the solder ball and the metal layer pad.
13. The electronic device according to claim 11 , further comprising:
the at least one slot comprising a length and a width, wherein the length is at least 3 times the width.
14. The electronic device according to claim 11 , further comprising:
the at least one slot is the circumferential circular slot arranged along a circular arc segment, wherein the circular arc segment extends over almost a complete circumference of a circle.
15. The electronic device according to claim 11 , further comprising:
the at least one slot is the two semi-circular slots, wherein each one of the two semi-circular slots is arranged along a circular arc segment, and each one of the circular arc segment extends over almost a complete circumference of a semi-circle.
16. The electronic device according to claim 11 , further comprising:
the at least one slot is the circumferential circular slot arranged along a circular arc segment, wherein the circular arc segment extends over almost a complete circumference of a semi-circle or over a complete circumference of a semi-circle.
17. The electronic device according to claim 11 , further comprising:
the at least one slot is the two semi-circular slots, wherein each one of the two semi-circular slots is arranged along a circular arc segment, and each one of the circular arc segments extends over almost a complete circumference of a quarter-circle.
18. A semiconductor device, comprising:
a substrate;
a first dielectric layer disposed on the substrate;
a first metal layer pad disposed on the first dielectric layer;
a second dielectric layer disposed on the first metal layer pad and on the first dielectric layer, the second dielectric layer comprising an opening;
a second metal layer pad disposed on the first metal layer pad in the opening of the second dielectric layer; and
a solder ball disposed on the second metal layer pad;
wherein the first metal layer pad comprises at least one void opening through the first metal layer pad, the at least one void opening being disposed laterally outside of the second metal layer pad, the at least one void opening being disposed laterally outside of the solder ball, and the at least one void opening being formed as at least one slot, the at least one slot comprising either one circumferential circular slot or two semi-circular slots, wherein the one circumferential circular slot includes an inner portion connected with an outer portion of the first metal layer pad by one constricted area which functions as a cantilever spring that allows a rotational movement of the inner portion of the one circumferential circular slot around an axis which is perpendicular to the first metal layer pad, and wherein the two semi-circular slots include an inner portion connected with an outer portion of the first metal layer pad by two constricted areas which function as torsional springs that allow a rotational movement of the inner portion of the two semi-circular void openings around an axis which is perpendicular to the first metal layer pad.
19. The semiconductor device according to claim 18 , wherein
the substrate comprises or consists of an encapsulation layer.
20. The semiconductor device according to claim 18 , further comprising:
a redistribution line, wherein the first metal layer pad is a redistribution pad and is part of and integral with the redistribution line.
21. The semiconductor device according to claim 20 , wherein
the substrate comprises a semiconductor die, the semiconductor die comprising a contact pad, the contact pad being connected with the first metal layer pad at least in part by means of the redistribution line.