Semiconductor device
Provided is a semiconductor device including a drift region having a first conductivity type provided on a semiconductor substrate; a plurality of trench portions provided above the drift region, on a top surface side of the semiconductor substrate; a base region having a second conductivity type provided in a mesa portion sandwiched between the plurality of trench portions, in the semiconductor substrate; an emitter region having the first conductivity type provided above the base region, on a top surface of the mesa portion; and a contact region having the second conductivity type and a higher doping concentration than the base region, provided adjacent to the emitter region on the top surface of the mesa portion, wherein a mesa width of the mesa portion is less than or equal to 100 nm, and a bottom end of the contact region is shallower than a bottom end of the emitter region.
1. A semiconductor device comprising:
a drift region having a first conductivity type provided on a semiconductor substrate;
a plurality of trench portions provided above the drift region, on a top surface side of the semiconductor substrate;
a base region having a second conductivity type provided in a mesa portion sandwiched between the plurality of trench portions, in the semiconductor substrate;
an emitter region having the first conductivity type provided above the base region, on a top surface of the mesa portion; and
a contact region having the second conductivity type and a higher doping concentration than the base region, provided adjacent to the emitter region on the top surface of the mesa portion, wherein
a mesa width of the mesa portion is less than or equal to 100 nm,
a bottom end of the contact region is shallower than a bottom end of the emitter region,
the contact region directly contacts the emitter region and at least one of the trench portions,
a plurality of the emitter regions arranged on the top surface of the mesa portion; and
a carrier path layer having a second conductivity type and a higher doping conductivity type and a higher doping concentration than the base region, extending in a depth direction of the semiconductor substrate,
wherein the carrier path layer is in direct contact with an emitter electrode and in direct contact with the drift region.
2. The semiconductor device according to claim 1 , wherein
the plurality of trench portions include gate conducting portions, and
the bottom end of the contact region is deeper than top ends of the gate conducting portions.
3. The semiconductor device according to claim 1 , wherein
the carrier path layer extends between adjacent emitter regions.
4. The semiconductor device according to claim 3 , wherein
the carrier path layer has the same doping concentration as the contact region.
5. The semiconductor device according to claim 3 , wherein
a depth of a bottom end of the carrier path layer is greater than or equal to an interval between the carrier path layer and the emitter region at the top surface of the mesa portion.
6. The semiconductor device according to claim 3 , wherein
the carrier path layer is provided at a position including at least a center between adjacent emitter regions, at the top surface of the mesa portion.
7. The semiconductor device according to claim 3 , wherein
the carrier path layer occupies a region that is greater than or equal to 25% and less than or equal to 75% of a region between adjacent emitter regions, at the top surface of the mesa portion.
8. The semiconductor device according to claim 1 , wherein
the bottom end of the contact region directly contacts the base region.
9. A semiconductor device comprising:
a drift region having a first conductivity type provided on a semiconductor substrate;
a plurality of trench portions provided above the drift region, on a top surface side of the semiconductor substrate;
a base region having a second conductivity type provided in a mesa portion sandwiched between the plurality of trench portions, in the semiconductor substrate;
a plurality of emitter regions having the first conductivity type arranged on a top surface of the mesa portion; and
a carrier path layer having a second conductivity type and a higher doping concentration than the base region, in direct contact with an emitter electrode and in direct contact with the drift region, extending in a depth direction of the semiconductor substrate, wherein
a mesa width of the mesa portion is less than or equal to 100 nm, and
the carrier path layer occupies the entire region between adjacent emitter regions among the plurality of emitter regions, at the top surface of the mesa portion.
10. The semiconductor device according to claim 9 , comprising
a contact region having the second conductivity type and a higher doping concentration than the base region, provided adjacent to the emitter region on the top surface of the mesa portion, wherein
the contact region directly contacts the emitter region and at least one of the trench portions.
11. The semiconductor device according to claim 9 , comprising
a contact region having the second conductivity type and a higher doping concentration than the base region, provided adjacent to the emitter region on the top surface of the mesa portion, wherein
the bottom end of the contact region directly contacts the base region.