Semiconductor devices and method of manufacturing the same
A semiconductor device includes a first transistor in a first region and a second transistor in a second region. The first transistor includes: a first nanowire, a first gate electrode, a first gate dielectric layer, a first source/drain region, and an inner-insulating spacer. The first nanowire has a first channel region. The first gate electrode surrounds the first nanowire. The first gate dielectric layer is between the first nanowire and the first gate electrode. The first source/drain region is connected to an edge of the first nanowire. The inner-insulating spacer is between the first gate dielectric layer and the first source/drain region. The second transistor includes a second nanowire, a second gate electrode, a second gate dielectric layer, and a second source/drain region. The second nanowire has a second channel region. The second gate electrode surrounds the second nanowire. The second gate dielectric layer is between the second nanowire and the second gate electrode. The second source/drain region is connected to an edge of the second nanowire.
1. A semiconductor device, comprising:
a plurality of nanowires on a substrate, the plurality of nanowires being spaced apart from each other in a first direction parallel to an upper surface of the substrate, each of the plurality of nanowires including a channel region;
a gate electrode on the upper surface of the substrate, the gate electrode surrounding the plurality of nanowires;
a source/drain region on both sides of the gate electrode, the source/drain region being connected to an edge of the plurality of nanowires; and
a plurality of inner-insulating spacers between the gate electrode and the source/drain region, each of the plurality of inner-insulating spacer being disposed between adjacent nanowires among the plurality of nanowires,
wherein a sidewall of each of the plurality of inner-insulating spacers which faces the gate electrode is not flat,
wherein each of the plurality of inner-insulating spacers has a convex sidewall, and each of the plurality of inner-insulating spacers has a width of a center portion thereof substantially larger than a width of a lower portion or a width of an upper portion thereof, and
the gate electrode has concave sidewalls conforming to the plurality of inner-insulating spacers.
2. The semiconductor device of claim 1 , wherein the gate electrode includes a plurality of sub-gate electrodes between adjacent nanowires among the plurality of nanowires,
each of the plurality of inner-insulating spacers is disposed between each of the plurality of sub-gate electrodes and the source/drain region, and
each of the plurality of sub-gate electrodes includes a tail portion at an upper edge and a lower edge of each of the plurality of sub-gate electrodes.
3. The semiconductor device of claim 2 , wherein each of the plurality of inner-insulating spacers has a convex sidewall, and
each of the plurality of sub-gate electrodes has a concave sidewall conforming to a shape of the convex sidewall of the plurality of inner-insulating spacers.
4. The semiconductor device of claim 2 , further comprising a gate dielectric layer between the plurality of sub-gate electrodes and the plurality of nanowires and between the plurality of sub-gate electrodes and the plurality of inner-insulating spacers.
5. The semiconductor device of claim 4 , wherein the source/drain region is not in contact with the gate dielectric layer.
6. The semiconductor device of claim 1 , wherein the plurality of inner-insulating spacers includes a first material having a first dielectric constant, and a gate dielectric layer which includes a second material having a second dielectric constant greater than the first dielectric constant.
7. The semiconductor device of claim 1 , further comprising:
an external insulating spacer surrounding side surfaces of the gate electrode,
wherein the external insulating spacer and the plurality of inner-insulating spacers overlap and are located over the substrate at different levels from each other in the first direction.
8. A semiconductor device, comprising:
a first transistor in a first region of a substrate and a second transistor in a second region of the substrate,
wherein the first transistor comprises: a plurality of first nanowires having a plurality of first channel regions; a first gate electrode surrounding the plurality of first nanowires; first source and drain regions respectively connected to both edges of the plurality of first nanowires; and an inner-insulating spacer between the first gate electrode and the first source and drain regions,
the second transistor comprises: a plurality of second nanowires having a plurality of second channel regions; a second gate electrode surrounding the plurality of second nanowires; and second source and drain regions respectively connected to both edges of the plurality of second nanowires,
wherein a portion of the first gate electrode extending between the first source and drain regions has a first width,
a portion of the second gate electrode extending between the second source and drain regions has a second width that is different from the first width.
9. The semiconductor device of claim 8 , wherein the inner-insulating spacer has a convex sidewall, and
the inner-insulating spacer has a width of a center portion thereof substantially larger than a width of a lower portion or a width of an upper portion thereof.
10. The semiconductor device of claim 8 , wherein the first gate electrode includes a plurality of first sub-gate electrodes between each of the plurality of first nanowires,
each of the plurality of first sub-gate electrodes includes a tail portion at an upper edge and a lower edge of each of the plurality of first sub-gate electrodes.
11. The semiconductor device of claim 10 , further comprising a gate dielectric layer between the plurality of first sub-gate electrodes and the plurality of first nanowires and between the plurality of first sub-gate electrodes and the inner-insulating spacer, and
wherein the first source and drain regions are not in contact with the gate dielectric layer.
12. The semiconductor device of claim 11 , wherein the inner-insulating spacer includes a first material having a first dielectric constant, and the gate dielectric layer includes a second material having a second dielectric constant greater than the first dielectric constant.
13. The semiconductor device of claim 11 , wherein the inner-insulating spacers has a sidewall protruding in a direction towards the plurality of first sub-gate electrodes, and each of the plurality of first sub-gate electrodes has a concave sidewall conforming to a shape of the sidewall of the inner-insulating spacer.
14. The semiconductor device of claim 1 , further comprising:
an external insulating spacer surrounding side surfaces of the first gate electrode,
wherein the external insulating spacer and the inner-insulating spacer overlap and are located over the substrate at different levels from each other in the first direction.
15. A semiconductor device, comprising:
a first transistor in a first region of a substrate and a second transistor in a second region of the substrate,
wherein the first transistor comprises: a plurality of first nanowires having a plurality of first channel regions; a first gate electrode surrounding the plurality of first nanowires; first source and drain regions respectively connected to both edges of the plurality of first nanowires; and an inner-insulating spacer between the first gate electrode and the first source and drain regions,
the second transistor comprises: a plurality of second nanowires having a plurality of second channel regions; a second gate electrode surrounding the plurality of second nanowires; and a second source and drain regions respectively connected to both edges of the plurality of second nanowires,
wherein the second gate electrode includes a plurality of second sub-gate electrodes between each of the plurality of second nanowires, and a gate dielectric layer is provided between the plurality of second sub-gate electrodes and the second source and drain regions,
a portion of the second gate electrode on an uppermost second nanowire among the plurality of second nanowires has a first width,
each of the plurality of second sub-gate electrodes has a second width greater than the first width, and
a width of the second sub-gate electrodes and the gate dielectric layer between the second source and drain regions is substantially the same as a width of the second nanowires between the second source and drain regions.
16. The semiconductor device of claim 15 , further comprising an external insulating spacer surrounding side surfaces of the second gate electrode,
wherein each of the plurality of second nanowires and each of the second sub-gate electrodes vertically overlap the external insulating spacer.
17. The semiconductor device of claim 15 , wherein the first gate electrode includes a plurality of first sub-gate electrodes between adjacent first nanowires among the plurality of first nanowires, and
the inner-insulating spacer is disposed on both sidewalls of each of the plurality of first sub-gate electrodes.
18. The semiconductor device of claim 17 , wherein each of the plurality of first sub-gate electrodes has a concave sidewall conforming to a shape of the sidewall of the inner-insulating spacer.
19. The semiconductor device of claim 17 , wherein the inner-insulating spacer has a sidewall protruding in a direction towards the first sub-gate electrodes with respect to a sidewall of the first source and drain regions.