Black matrix, color filter and method of preparing the same, display panel, and display device
A black matrix, a color filter and a method of preparing the same, a display panel, and a display device are provided, including: a plurality of first walls extending along a first direction; and a plurality of second walls extending along a second direction intersected with the plurality of first walls along the first direction at intersection regions, wherein the plurality of first walls and the plurality of second walls form a mesh-like structure with a plurality of openings. At least one of the intersection regions is to receive a main support column including a top end, and the at least one of the intersection regions to receive the main support column is widened to be larger than a dimension of the top end of the main support column to be received therein.
1. A display panel, comprising:
an array substrate including a first thin film transistor (TFT), a second thin film transistor (TFT), and a passivation layer on the first TFT and the second TFT;
a color filter (CF) substrate provided oppositely to the array substrate;
a liquid crystal layer provided between the array substrate and the CF substrate;
a main support column provided between the CF substrate and the array substrate; and
a secondary support column provided between the CF substrate and the array substrate;
wherein the CF substrate comprises a base substrate, a color filter layer on the base substrate, and a black matrix on the base substrate, wherein the black matrix comprises:
a plurality of first walls extending along a first direction; and
a plurality of second walls extending along a second direction and intersected with the plurality of first walls along the first direction at intersection regions, wherein the plurality of first walls and the plurality of second walls form a mesh-like structure with a plurality of openings, the plurality of openings are filled with the color filter layer to form pixels,
wherein at least one of the intersection regions is configured to receive the main support column including a top end, and at least another one of the intersection regions is configured to receive the secondary support column including a top end, and a dimension of the top end of the main support column is smaller than a dimension of the top end of the secondary support column, the main support column is provided between a position on the passivation layer corresponding to the first TFT and the at least one of the intersection regions, and the secondary support column is provided between another position of the passivation layer corresponding to the second TFT and the at least another one of the intersection regions,
wherein the at least one of the intersection regions to receive the main support column is widened to be larger than a dimension of the top end of the main support column to be received therein, and the widened intersection region has an oval-like shape or a pentagon-like shape, and a distance d 1 between a boundary of the top end of the main support column and a boundary of the widened intersection region in the at least one of the intersection regions is in a range of about 0.5 μm to about 1 μm, and a press gap is about 0.1% to 0.8%.
2. The display panel according to claim 1 , wherein the array substrate further comprises a gate electrode; a gate insulating layer; an active layer; a first electrode layer; source-drain electrodes; and a second electrode provided thereon.
3. The display panel according to claim 1 , wherein the first TFT is one of a switch TFT or a drive TFT, and the second TFT is another one of the switch TFT or the drive TFT.
4. The display panel according to claim 1 , wherein the first TFT comprises a first active layer, the second TFT comprises a second active layer, the top end of the main support column is provided on the first active layer of the first TFT, and the top end of the secondary support column is provided on the second active layer.
5. The display panel according to claim 1 , wherein an orthographic projection of each of the main support column and the secondary support column on the array substrate falls in that of a corresponding intersection region on the array substrate.
6. A display device, comprising a display panel, wherein the display panel comprises:
an array substrate including a first thin film transistor (TFT), a second thin film transistor (TFT), and a passivation layer on the first TFT and the second TFT;
a color filter (CF) substrate provided oppositely to the array substrate;
a liquid crystal layer provided between the array substrate and the CF substrate;
a main support column provided between the CF substrate and the array substrate; and
a secondary support column provided between the CF substrate and the array substrate,
wherein the CF substrate comprises a base substrate, color filter layer on the base substrate, and a black matrix on the base substrate, wherein the black matrix comprises:
a plurality of first walls extending along a first direction; and
a plurality of second walls extending along a second direction and intersected with the plurality of first walls along the first direction at intersection regions, wherein the plurality of first walls and the plurality of second walls form a mesh-like structure with a plurality of openings, the plurality of openings are filled with the color filter layer to form pixels,
wherein at least one of the intersection regions is configured to receive the main support column including a top end, and at least another one of the intersection regions is configured to receive the secondary support column including a top end, and a dimension of the top end of the main support column is smaller than a dimension of the top end of the secondary support column, the main support column is provided between a position of the passivation layer corresponding to the first TFT and the at least one of the intersection regions, and the secondary support column is provided between another position of the passivation layer corresponding to the second TFT and the at least another one of the intersection regions,
wherein the at least one of the intersection regions to receive the main support column is widened to be larger than a dimension of the top end of the main support column to be received therein, and the widened intersection region has an oval-like shape or a pentagon-like shape, and a distance d 1 between a boundary of the top end of the main support column and a boundary of the widened intersection region in the at least one of the intersection regions is in a range of about 0.5 μm to about 1 μm, and a press gap is about 0.1% to 0.8%.
7. The display device according to claim 6 , wherein the first TFT comprises a first active layer, the second TFT comprises a second active layer, the top end of the main support column is provided on the first active layer of the first TFT, and the top end of the secondary support column is provided on the second active layer.
8. The display device according to claim 6 , wherein the array substrate further comprises a gate electrode; a gate insulating layer; an active layer; a first electrode layer; source-drain electrodes; and a second electrode provided thereon.
9. The display device according to claim 6 , wherein the first TFT is one of a switch TFT or a drive TFT, and the second TFT is another one of the switch TFT or the drive TFT.
10. The display device according to claim 6 , wherein an orthographic projection of each of the main support column and the secondary support column on the array substrate falls in that of a corresponding intersection region on the array substrate.
11. A method of preparing a display panel, wherein the display panel comprises: an array substrate including a first thin film transistor (TFT), a second thin film transistor (TFT), and a passivation layer on the first TFT and the second TFT; a color filter (CF) substrate provided oppositely to the array substrate; a liquid crystal layer provided between the array substrate and the CF substrate; a main support column provided between the CF substrate and the array; and a secondary support column provided between the CF substrate and the array substrate, wherein the CF substrate comprises a base substrate, a color filter layer on the base substrate, and a black matrix on the base substrate, wherein the black matrix comprises: a plurality of first walls extending along a first direction; and a plurality of second walls extending along a second direction and intersected with the plurality of first walls along the first direction at intersection regions, wherein the plurality of first walls and the plurality of second walls form a mesh-like structure with a plurality of openings, the plurality of openings are filled with the color filter layer to form pixels, wherein at least one of the intersection regions is configured to receive the main support column including a top end, and at least another one of the intersection regions is configured to receive the secondary support column including a top end, and a dimension of the top end of the main support column is smaller than a dimension of the top end of the secondary support column, the main support column is provided between a position on the passivation layer corresponding to the first TFT and the at least one of the intersection regions, and the secondary support column is provided between another position of the passivation layer corresponding to the second TFT and the at least another one of the intersection regions, wherein the at least one of the intersection regions to receive the main support column is widened to be larger than a dimension of the top end of the main support column to be received therein, and the widened intersection region has an oval-like shape or a pentagon-like shape, and a distance d 1 between a boundary of the top end of the main support column and a boundary of the widened intersection region in the at least one of the intersection regions is in a range of about 0.5 μm to about 1 μm, and a press gap is about 0.1% to 0.8%, the method comprising:
providing the array substrate including the first TFT, the second TFT, and the passivation layer on the first TFT and the second TFT;
providing the CF substrate oppositely to the array substrate;
providing the liquid crystal layer between the array substrate and the CF substrate;
forming the main support column between the CF substrate and the array substrate; and
forming the secondary support column between the CF substrate and the array substrate,
wherein the providing the CF substrate comprises:
providing the base substrate;
forming the color filter layer on the base substrate;
forming a pattern of the color filter layer; and
forming the black matrix, wherein the black matrix corresponds to the pattern of the color filter layer.
12. The method according to claim 11 , wherein the pattern of the color filter layer comprises a plurality of separated regions, corners of each of the separated regions being decreased in dimensions to form the oval-like shape or the pentagon-like shape intersection region to receive the main support column.
13. The method according to claim 11 , wherein the first TFT comprises a first active layer, the second TFT comprises a second active layer, the top end of the main support column is provided on the first active layer of the first TFT, and the top end of the secondary support column is provided on the second active layer.
14. The method according to claim 11 , wherein the first TFT is one of a switch TFT or a drive TFT, and the second TFT is another one of the switch TFT or the drive TFT.
15. The method according to claim 11 , wherein an orthographic projection of each of the main support column and the secondary support column on the array substrate falls in that of a corresponding intersection region on the array substrate.