TFT substrate and method for manufacturing the same

1. A method for manufacturing a TFT substrate, comprising:

providing a silicon-wafer plate;

forming a plurality of first masking structures on the silicon-wafer plate and etching the silicon-wafer plate via the first masking structures to form island structures;

cutting the island structures layer by layer to form a silicon-wafer sub-plate; and

adhering the silicon-wafer sub-plate on a substrate to form the TFT substrate.

2. The method of claim 1 , wherein the forming of the first masking structures on the silicon-wafer plate, comprises:

coating the silicon-wafer plate with a layer of photoresist material;

removing a portion of the photoresist material where the first masking structures are to be set;

forming a first masking layer on remaining portions of the photoresist material and on the silicon-wafer plate where the first masking structures are to be set;

removing portions of the first masking layer with an etching solution corresponding to the photoresist material, so as to form the first masking structures.

3. The method of claim 1 further comprising:

after forming the island structures, depositing a layer of second masking structures on the silicon-wafer plate and the island structures;

forming a first protection layer on a portion of the second masking structures of the silicon-wafer plate which are not on the island structures;

hardening the first protection layer;

removing other portions of the layer of second masking structures on the island structures with an etching solution of the layer of second masking structures;

forming on the silicon-wafer plate a second protection layer wrapping around the island structures; and

hardening the second protection layer.

4. The method of claim 3 , wherein the step of hardening the first protection layer comprises:

placing the first protection layer in a first temperature environment for a first predetermined time to harden the first protection layer;

the step of hardening the second protection layer comprises:

placing the second protection layer in a second temperature environment for a second predetermined time to harden the second protection layer.

5. The method of claim 3 , wherein the step of the cutting the island structures layer by layer comprises:

cutting layer by layer the island structures and the second protection layer to obtain a second protection sub-layer, wherein the second protection sub-layer has the silicon-wafer sub-plate wrapped inside.

6. The method of claim 5 , wherein a direction for cutting layer by layer the second protection layer wrapping around the island structures is parallel to an extending direction of the silicon-wafer plate.

7. The method of claim 5 , further comprising:

transferring the second protection sub-layer onto the substrate;

plasma etching the second protection sub-layer to expose the silicon-wafer sub-plate, to form the TFT substrate.

8. The method of claim 5 , further comprising:

placing the TFT substrate in a third temperature environment for a third predetermined time.

9. A method for manufacturing a TFT substrate, comprising:

providing a silicon-wafer plate;

forming a plurality of first masking structures on the silicon-wafer plate;

etching the silicon-wafer plate via the first masking structure to form island structures;

cutting the island structures into a plurality of silicon-wafer sub-plates;

adhering one of the silicon-wafer sub-plates onto a substrate to form the TFT substrate.

10. The method of claim 9 , wherein the forming of the first masking structures on the silicon-wafer plate comprises:

coating the silicon-wafer plate with a layer of photoresist material;

removing a portion of the photoresist material in an first area of the silicon-wafer plate;

forming a first masking layer on the photoresist material and the first area of the silicon-wafer plate;

removing the first masking layer on the photoresist material with an etching solution corresponding to the photoresist material to form the first masking structures.

11. The method of claim 9 , further comprising:

forming a main protection layer wrapping around the island structures after forming the island structures on the silicon-wafer plate;

wherein, the step of cutting the island structures comprises:

cutting the island structures and the main protection layer into a plurality of sub-layers with the silicon-wafer sub-plates inside.

12. The method of claim 11 , wherein the step of adhering one of the silicon-wafer sub-plates onto a substrate comprises:

adhering one of the sub-layers onto the substrate.

13. The method of claim 11 , wherein a direction for cutting the island structures and the main protection layer is parallel to an extending direction of the silicon-wafer plate.

14. The method of claim 11 , wherein before forming the main protection layer, the method further comprises:

depositing a layer of second masking structures on the silicon-wafer plate and the island structures;

forming a mask-protection layer on a portion of the second masking structures located on the silicon-wafer plate.

15. The method of claim 14 , wherein before cutting the island structures and the main protection layer, the method further comprises:

separating the island structures and the main protection layer from the mask-protection layer.

16. The method of claim 14 , further comprising:

placing the mask-protection layer in a first temperature environment for a first predetermined time, to harden the mask-protection layer; and

placing the main protection layer in a second temperature environment for a second predetermined time, to harden the main protection layer.

17. The method of claim 16 , further comprising:

placing the TFT substrate in a third temperature environment for a third predetermined time.