Semiconductor light-emitting array and method of manufacturing the same
Provided are a semiconductor light-emitting array and a method of manufacturing the same. The manufacturing method includes forming a plurality of grooves in a region of a substrate and sequentially growing a first semiconductor layer, an active layer, and a second semiconductor layer on the substrate to form a light-emitting structure layer.
1. A method of manufacturing a semiconductor light-emitting array, the manufacturing method comprising:
forming a plurality of first grooves on an upper surface of a substrate by a physical or a mechanical process; and
forming a light-emitting structure layer by sequentially growing a first semiconductor layer, an active layer, and a second semiconductor layer on the substrate;
forming a plurality of first electrodes respectively electrically connected to the first semiconductor layer and a plurality of second electrodes respectively electrically connected to the second semiconductor layer;
separating the light-emitting structure layer, the plurality of first electrodes and the plurality of second electrodes into units of semiconductor light-emitting device,
wherein each of the upper surfaces of the first semiconductor layer, the active layer, and the second semiconductor layer comprises a plurality of second grooves corresponding to the plurality of first grooves and overlapping the plurality of first grooves in a one-to-one manner in a plan view, and
the plurality of first and second grooves do not overlap with the plurality of first and second electrodes in the plan view.
2. The method of claim 1 , wherein the plurality of first grooves are formed one-dimensionally or two-dimensionally.
3. The method of claim 1 , wherein the plurality of first grooves have point shapes and are spaced apart from one another.
4. The method of claim 1 , wherein the plurality of first grooves have linear shapes and are spaced apart from one another.
5. The method of claim 1 , wherein the plurality of first grooves have a mesh structure.
6. The method of claim 1 , wherein a thickness of the substrate is 10 mm or less.
7. The method of claim 1 , wherein a depth of the first grooves is 15 μm or less.
8. The method of claim 1 , wherein a maximum width of the first grooves is 15 μm or less.
9. The method of claim 1 , wherein the plurality of first grooves are formed by dicing or dry etching.
10. The method of claim 1 , wherein the light-emitting structure layer is formed by epitaxial growth.
11. The method of claim 1 , wherein the substrate is a sapphire substrate.
12. The method of claim 1 , wherein the light-emitting structure layer includes a nitride-based semiconductor material.
13. The method of claim 1 , wherein a non-grooved portion of at least one of the first semiconductor layer, the active layer, or the second semiconductor layer overlaps a non-grooved portion of the substrate in the plan view.