Variable resistance memory device and method of manufacturing the same
A method of manufacturing a variable resistance memory device includes: forming an array of memory cells on a substrate, each memory cell including a variable resistance structure and a switching element; and forming a sidewall insulating layer covering a sidewall of the switching element. The forming the sidewall insulating layer includes: a preliminary step of supplying a silicon source to an exposed sidewall of the switching element; and a main step of performing a process cycle a plurality of times, the process cycle comprising supplying the silicon source and supplying a reaction gas, A time duration of the supplying the silicon source in the preliminary step is longer than a time duration of the supplying the silicon gas in the process cycle in the main step.
1. A method of manufacturing a variable resistance memory device, the method comprising:
forming an array of memory cells on a substrate, each of the memory cells comprising a variable resistance structure and a switching element; and
forming a sidewall insulating layer covering a sidewall of the switching element, the forming the sidewall insulating layer comprising:
performing a preliminary step comprising:
supplying a silicon source to the sidewall of the switching element; and
after the silicon source is supplied, supplying a reaction gas, a time duration of the supplying the silicon source in the preliminary step being longer than a time duration of the supplying the reaction gas in the preliminary step; and
after the preliminary step is performed, performing a main step comprising performing a process cycle a plurality of times, the process cycle comprising:
supplying the silicon source; and
after the silicon source is supplied, supplying the reaction gas, the time duration of the supplying the silicon source in the preliminary step being longer than a time duration of the supplying the silicon source in the process cycle in the main step.
2. The method of claim 1 , wherein the time duration of the supplying the silicon source in the preliminary step is shorter than a time duration of performing the process cycle five times in the main step.
3. The method of claim 1 , wherein the time duration of the supplying the silicon source in the preliminary step is about 10 times longer than the time duration of the supplying the silicon source in the process cycle in the main step.
4. The method of claim 1 , wherein the silicon source is supplied only once during the preliminary step.
5. The method of claim 1 , wherein the reaction gas is supplied only once during the preliminary step.
6. The method of claim 1 , wherein the preliminary step and the main step are performed in-situ.
7. The method of claim 1 , wherein the performing the preliminary step further comprises purging at least a part of the silicon source that is unadsorbed on the sidewall of the switching element, prior to starting the main step.
8. The method of claim 1 , wherein the preliminary step is performed at a lower pressure than the main step.
9. The method of claim 1 , wherein the reaction gas comprises nitrogen atoms.
10. The method of claim 1 , wherein radio-frequency (RF) power is applied during the supplying the reaction gas in the preliminary step and the main step.
11. The method of claim 1 , wherein the sidewall insulating layer comprises two different silicon-containing layers different from a filling insulation layer.
12. A method of manufacturing a variable resistance memory device, the method comprising:
forming an array of memory cells on a substrate, wherein each of the memory cells comprises a variable resistance structure and a switching element; and
forming a sidewall insulating layer covering a sidewall of the switching element, wherein the forming the sidewall insulating layer comprises performing a deposition process in which a process cycle comprising supplying a silicon source is performed a plurality of times, wherein a time duration of the supplying the silicon source in an initial process cycle is longer than a time duration of the supplying the silicon source in a subsequent process cycle, when the process cycle is performed the plurality of times, and wherein the supplying the silicon source in the initial process cycle is performed at a lower pressure than the supplying the silicon source in the subsequent process cycle.
13. The method of claim 12 , wherein a process cycle performed after the initial process cycle comprises supplying a reaction gas.
14. The method of claim 12 , wherein the time duration of the supplying the silicon source in the initial process cycle is longer than a time duration of the subsequent process cycle.
15. The method of claim 13 , wherein radio-frequency (RF) power is applied t-during the supplying the reaction gas, and the RF power is not applied during the supplying the silicon source.
16. The method of claim 12 , further comprising forming a filling insulation layer filling a space between the memory cells, after the forming the sidewall insulating layer,
wherein the sidewall insulating layer is formed at a lower temperature than the filling insulation layer.
17. The method of claim 16 , wherein the sidewall insulating layer is formed at a temperature about 120 degrees Celsius to about 280 degrees Celsius and the filling insulation layer is formed at a temperature about 220 degrees Celsius to about 300 degrees Celsius.