RF switch with compensation
A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.
1. A radio frequency (RF) switch device comprising:
a first transistor and a second transistor, wherein the first and second transistors are coupled in series to establish a switchable RF path; and
a first compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor,
wherein the first compensation network is configured to establish a path for current flowing between the body terminal of the first transistor and the source/drain terminal of the second transistor in a first direction and to block current flowing therebetween in a second direction opposite to the first direction, and wherein the RF switch device further comprises a second compensation network coupled between a body terminal of the second transistor and a source/drain terminal of the first transistor.
2. The RF switch device of claim 1 , wherein the current flowing in the first direction is configured to be less than or equal to a leakage current associated with the body terminal of the first transistor.
3. The RF switch device of claim 1 , wherein a leakage current associated with the body terminal of the first transistor comprises a gate-induced source leakage current or a gate-induced drain leakage current.
4. The RF switch device of claim 1 , wherein the first compensation network comprises a diode circuit.
5. The RF switch device of claim 4 , wherein the diode circuit comprises a diode.
6. The RF switch device of claim 4 , wherein the diode circuit comprises a diode coupled in series with a resistor.
7. The RF switch device of claim 4 , wherein the diode circuit comprises a first diode coupled in series with a second diode.
8. The RF switch device of claim 4 , wherein the diode circuit comprises a first diode, a second diode, and a resistor coupled in series.
9. The RF switch device of claim 1 , wherein the first compensation network comprises a diode-connected transistor circuit.
10. The RF switch device of claim 9 , wherein the diode-connected transistor circuit comprises a diode-connected transistor.
11. The RF switch device of claim 9 , wherein the diode-connected transistor circuit comprises a diode-connected transistor coupled in series with a resistor.
12. The RF switch device of claim 9 , wherein the diode-connected transistor circuit comprises a diode-connected transistor having a resistor coupled between a drain terminal and a gate terminal of the diode-connected transistor.
13. The RF switch device of claim 9 , wherein the diode-connected transistor circuit comprises a diode-connected transistor having a first resistor coupled between a drain terminal and a gate terminal of the diode-connected transistor, and a second resistor coupled in series with a source terminal of the diode-connected transistor.
14. The RF switch device of claim 1 , further comprising a third transistor having a drain terminal coupled to a source terminal of the second transistor, and a source terminal coupled to the drain terminal of the first transistor.
15. The RF switch device of claim 1 , wherein the second compensation network comprises a rectifying element.
16. The RF switch device of claim 1 , wherein the current flowing through the second compensation network is configured to be less than or equal to a leakage current associated with the body terminal of the second transistor.
17. A radio frequency (RF) switch device comprising:
a plurality of transistors in series connection forming a switchable current path; and
a plurality of first compensation networks coupled between a body terminal of an N th transistor of the plurality of transistors and a drain terminal of an (N+1) th transistor of the plurality of transistors,
wherein each of the first compensation networks comprises a rectifying element, wherein the plurality of first compensation networks is less than the plurality of transistors, and wherein N is a positive integer.
18. The RF switch device of claim 17 , further comprising a plurality of second compensation networks coupled between a body terminal of an (M+1) th transistor of the plurality of transistors and a source terminal of an M th transistor of the plurality of transistors, wherein each of the second compensation networks comprises a rectifying element, and wherein M is a positive integer.
19. The RF switch device of claim 18 , wherein the plurality of second compensation networks is less than the plurality of transistors.
20. A method of operating a radio frequency (RF) switch device comprising a first transistor and a second transistor, wherein the first and second transistors are coupled in series to establish a switchable RF path, the method comprising:
causing a first leakage current to flow between a body terminal of the first transistor and a source/drain terminal of the second transistor during a first half-period of an RF signal in communication with the RF switch; and
causing a second leakage current to flow between a body terminal of the second transistor and a source/drain terminal of the first transistor during a second half-period of the RF signal in communication with the RF switch.