IP Library › Granted Patent US 10,932,397
Granted Patent B2
US 10,932,397 · App. 16/787,122 · Granted Feb 23, 2021

Power conversion device

Inventors: Yuu Yamahira (Kariya, JP); Tetsuya Matsuoka (Kariya, JP); Kazuma Fukushima (Kariya, JP)
Assignee: DENSO CORPORATION
H05K7/20927H02M7/003H02M2001/0009
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Quick Facts
Patent No.
US 10,932,397
App. No.
16/787,122
Granted
Feb 23, 2021
Kind
B2
Abstract

In a power conversion device, each of semiconductor modules of a layered body includes a body portion incorporating a plurality of switching elements and a plurality of power terminals protruding therefrom. The semiconductor modules include upper-arm switching elements and lower-arm switching element that are alternately layered in a layering direction of the layered body. A capacitor is disposed on one side of the layered body and a current sensor is disposed on an opposite side of the layered body, in an orthogonal direction orthogonal to both a protruding direction of the power terminals and the layering direction. Each of the semiconductor modules includes, as the power terminals, two collector terminals connected to a collector electrode of the switching element and one emitter terminal connected to an emitter electrode of the switching element, and the emitter terminal is disposed between the two collector terminals in the orthogonal direction.

Claims (14)

1. A power conversion device comprising:

a layered body comprising semiconductor modules each incorporating switching elements and cooling pipes cooling the semiconductor modules, the semiconductor modules and the cooling pipes being layered;

a capacitor smoothing a DC voltage applied to each of the semiconductor modules; and

a current sensor measuring a current flowing through each of the switching elements, wherein

the semiconductor modules include upper-arm semiconductor modules disposed on an upper arm side and lower-arm semiconductor modules disposed on a lower arm side, the upper-arm semiconductor modules and the lower-arm semiconductor modules being alternately layered in a layering direction of the layered body,

each of the semiconductor modules includes a body portion incorporating the switching elements and a plurality of power terminals protruding from the body portion, and

the capacitor is disposed on one side of the layered body and the current sensor is disposed on an opposite side of the layered body, in an orthogonal direction orthogonal to both a protruding direction of the power terminals and the layering direction, and

each of the semiconductor modules includes, as the power terminals, two collector terminals connected to a collector electrode of the switching element and one emitter terminal connected to an emitter electrode of the switching element, and the emitter terminal is disposed between the two collector terminals in the orthogonal direction.

2. The power conversion device according to claim 1 , wherein

each of the semiconductor modules incorporates a plurality of the switching elements connected together in parallel.

3. The power conversion device according to claim 1 , wherein

the power terminals include a DC terminal connected to the capacitor and an AC terminal, a current output from the AC terminal is measured by the current sensor, a first of two types of the semiconductor modules including the upper-arm semiconductor module and the lower-arm semiconductor module includes a plurality of the DC terminals, a second of the two types of the semiconductor modules includes a plurality of the AC terminals, a plurality of the DC terminals included in the first semiconductor module are coupled together by a DC bus bar, the DC bus bar extends from the DC terminal included in the plurality of DC terminals and located closer to the capacitor, toward the capacitor in the orthogonal direction, a plurality of the AC terminals included in the second semiconductor module are coupled together by an AC bus bar, and the AC bus bar extends from the AC terminal included in the plurality of AC terminals and located closer to the current sensor, toward the current sensor in the orthogonal direction.

4. The power conversion device according to claim 1 , wherein

for each of the switching elements, a freewheel diode is connected in antiparallel with the switching element, and the switching element and the freewheel diode are formed in a same semiconductor chip.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 11, 2020
From: YAMAHIRA, YUU; MATSUOKA, TETSUYA; FUKUSHIMA, KAZUMA
To: DENSO CORPORATION
Reel/Frame 051779/0980 →
Priority Claims (1)
JP 2017-156257 · Aug 11, 2017 · national
Continuity (2)
Continuation PCTJP2018029239 · Aug 3, 2018
Related Publication 20200177101A1 · Jun 4, 2020