Integrated photodiode with unique waveguide drift layer
A monolithic waveguide-integrated photodiode having a first electroconductive contact layer, a depleted waveguide core layer, an absorption layer, and a second electroconductive contact layer, the refractive index of the first electroconductive contact layer being less than the depleted waveguide core layer, the refractive index of the waveguide core layer being less than the absorption layer, and the refractive index of the second electroconductive contact layer being less than the absorption layer. The waveguide core layer is arranged between the first electroconductive contact layer and the absorption layer and also acts as a depleted carrier drift layer. This arrangement results in greater quantum efficiency and shorter photodiode lengths for a given bandwidth.
1. A monolithic waveguide-integrated photodiode comprising:
at least one first electroconductive contact layer having a first side and an opposing second side;
a first waveguide cladding layer having a first side and an opposing second side, wherein the first side of the first waveguide cladding layer is arranged on the second side of said first electroconductive contact layer, wherein said first electroconductive contact layer has a first refractive index and said first waveguide cladding layer has a second refractive index;
a waveguide core layer comprising a layer from a semiconducting material having a first side and an opposing second side, the first side of said waveguide core layer being arranged on the second side of said first waveguide cladding layer, wherein said waveguide core layer has a third refractive index;
an absorption layer having a first side and an opposing second side, wherein the first side of said absorption layer is arranged on the second side of said waveguide core layer and said absorption layer has a fourth refractive index;
a second waveguide cladding layer having a first side and an opposing second side, wherein the first side of said second waveguide cladding layer is arranged on the second side of said absorption layer;
at least one second electroconductive contact layer having a first side and an opposing second side, wherein the first side of said second electroconductive contact layer is arranged on the second side of said second waveguide cladding layer, wherein said second waveguide cladding layer has a fifth refractive index and said second electroconductive contact layer has a sixth refractive index;
wherein the first refractive index of said first electroconductive contact layer is less than or equal to the second refractive index of said first waveguide cladding layer;
wherein the second refractive index of said first waveguide cladding layer is lower than the third refractive index of said waveguide core layer;
wherein the third refractive index of said waveguide core layer is lower than the fourth refractive index of said absorption layer; and
wherein the fifth refractive index of said second waveguide cladding layer is lower than the fourth refractive index of said absorption layer.
2. The photodiode of claim 1 , wherein the sixth refractive index of said second electroconductive contact layer is less than or equal to the fifth refractive index of said second waveguide cladding layer.
3. The photodiode of claim 1 , wherein the sixth refractive index of said second electroconductive contact layer is greater than the fifth refractive index of said second waveguide cladding layer and wherein the sixth refractive index of said second electroconductive contact layer is lower than the fourth refractive index of said absorption layer.
4. The photodiode of claim 1 , wherein said waveguide core layer is not intentionally doped.
5. The photodiode of claim 1 , wherein said waveguide core layer is lightly doped.
6. The photodiode of claim 1 , wherein said waveguide core layer is depleted.
7. The photodiode of claim 1 , wherein said first waveguide cladding layer comprises a metallic material, dielectric material, semiconductor material or confined air space.
8. The photodiode of claim 1 , wherein said second waveguide cladding layer comprises a metallic material, dielectric material, semiconductor material or confined air space.
9. The photodiode of claim 1 , wherein said first electroconductive contact layer comprises an n-type electroconductive contact layer and wherein said second electroconductive contact layer comprises a p-type electroconductive contact layer.
10. The photodiode of claim 1 , wherein said first electroconductive contact layer comprises a p-type electroconductive contact layer and wherein said second electroconductive contact layer comprises an n-type electroconductive contact layer.
11. The photodiode of claim 1 , further comprising a substrate layer having a first side and an opposing second side, wherein the first side of said first electroconductive contact layer is located on the second side of said substrate layer.
12. A monolithic waveguide-integrated photodiode comprising:
at least one first electroconductive contact layer having a first side and an opposing second side, wherein said first electroconductive contact layer has a first refractive index;
a waveguide core layer comprising a layer from a semiconducting material having a first side and an opposing second side, the first side of said waveguide core layer being arranged on the second side of said first electroconductive contact layer, wherein said waveguide core layer has a second refractive index;
an absorption layer having a first side and an opposing second side, wherein the first side of said absorption layer is arranged on the second side of said waveguide core layer and said absorption layer has a third refractive index;
at least one second electroconductive contact layer having a first side and an opposing second side, wherein the first side of said second electroconductive contact layer is arranged on the second side of said absorption layer, wherein said second electroconductive contact layer has a fourth refractive index;
wherein the first refractive index of said first electroconductive contact layer is lower than the second refractive index of said waveguide core layer;
wherein the second refractive index of said waveguide core layer is lower than the third refractive index of said absorption layer; and
wherein the fourth refractive index of said second electroconductive contact layer is lower than the third refractive index of said absorption layer.
13. The photodiode of claim 12 , wherein said first electroconductive contact layer is configured to act as a first waveguide cladding layer.
14. The photodiode of claim 13 , further comprising a second waveguide cladding layer having a first side and an opposing second side, wherein the first side of said second waveguide cladding layer is located on the second side of said absorption layer and wherein the second side of said second waveguide cladding layer is located on the first side of said second electroconductive contact layer.
15. The photodiode of claim 14 , wherein said second waveguide cladding layer has a fifth refractive index, wherein the fourth refractive index of said second electroconductive contact layer is less than or equal to the fifth refractive index of said second waveguide cladding layer.
16. The photodiode of claim 14 , wherein said second waveguide cladding layer has a fifth refractive index, wherein the fourth refractive index of said second electroconductive contact layer is greater than the fifth refractive index of said second waveguide cladding layer.
17. The photodiode of claim 15 , wherein the fifth refractive index of said second waveguide cladding layer is lower than the third refractive index of said absorption layer.
18. The photodiode of claim 12 , wherein said second electroconductive contact layer is configured to act as a second waveguide cladding layer.
19. The photodiode of claim 18 , further comprising a first waveguide cladding layer having a first side and an opposing second side, wherein the first side of said first waveguide cladding layer is located on the second side of said first electroconductive contact layer and wherein the second side of said first waveguide cladding layer is located on the first side of said waveguide core layer.
20. The photodiode of claim 19 , wherein said first waveguide cladding layer has a sixth refractive index, wherein the first refractive index of said first electroconductive contact layer is less than or equal to the sixth refractive index of said first waveguide cladding layer.
21. The photodiode of claim 20 , wherein the sixth refractive index of said first waveguide cladding layer is lower than the second refractive index of said waveguide core layer.
22. The photodiode of claim 12 , wherein the first electroconductive contact layer is configured to act as a first waveguide cladding layer and the second electroconductive contact layer is configured to act as a second waveguide cladding layer.
23. The photodiode of claim 12 , wherein said waveguide core layer is not intentionally doped.
24. The photodiode of claim 12 , wherein said waveguide core layer is lightly doped.
25. The photodiode of claim 12 , wherein said waveguide core layer is depleted.
26. The photodiode of claim 14 , wherein said second waveguide cladding layer comprises a metallic material, dielectric material, semiconductor material or confined air space.
27. The photodiode of claim 19 , wherein said first waveguide cladding layer comprises a metallic material, dielectric material, semiconductor material, or confined air space.
28. The photodiode of claim 12 , wherein said first electroconductive contact layer comprises an n-type electroconductive contact layer and wherein said second electroconductive contact layer comprises a p-type electroconductive contact layer.
29. The photodiode of claim 12 , wherein said first electroconductive contact layer comprises a p-type electroconductive contact layer and wherein said second electroconductive contact layer comprises an n-type electroconductive contact layer.
30. The photodiode of claim 12 , further comprising a substrate layer having a first side and an opposing second side, wherein the first side of said first electroconductive contact layer is located on the second side of said substrate layer.
31. A monolithic waveguide-integrated photodiode comprising:
at least one first electroconductive contact layer having a first side and an opposing second side;
a first waveguide cladding layer having a first side and an opposing second side, wherein the first side of the first waveguide cladding layer is arranged on the second side of said first electroconductive contact layer, wherein said first electroconductive contact layer has a first refractive index and said first waveguide cladding layer has a second refractive index;
a waveguide core layer comprising a layer from a semiconducting material having a first side and an opposing second side, the first side of said waveguide core layer being arranged on the second side of said first waveguide cladding layer, wherein said waveguide core layer has a third refractive index;
an absorption layer having a first side and an opposing second side, wherein the first side of said absorption layer is arranged on the second side of said waveguide core layer and said absorption layer has a fourth refractive index;
a second waveguide cladding layer having a first side and an opposing second side, wherein the first side of said second waveguide cladding layer is arranged on the second side of said absorption layer; and
at least one second electroconductive contact layer having a first side and an opposing second side, wherein the first side of said second electroconductive contact layer is arranged on the second side of said second waveguide cladding layer, wherein said second waveguide cladding layer has a fifth refractive index and said second electroconductive contact layer has a sixth refractive index.
32. A monolithic waveguide-integrated photodiode comprising:
at least one first electroconductive contact layer having a first side and an opposing second side, wherein said first electroconductive contact layer has a first refractive index;
a waveguide core layer comprising a layer from a semiconducting material having a first side and an opposing second side, the first side of said waveguide core layer being arranged on the second side of said first electroconductive contact layer, wherein said waveguide core layer has a second refractive index;
an absorption layer having a first side and an opposing second side, wherein the first side of said absorption layer is arranged on the second side of said waveguide core layer and said absorption layer has a third refractive index; and
at least one second electroconductive contact layer having a first side and an opposing second side, wherein the first side of said second electroconductive contact layer is arranged on the second side of said absorption layer, wherein said second electroconductive contact layer has a fourth refractive index.