Phosphepine matrix compound for a semiconducting material

1. A compound having formula (II)

wherein

a) R 1 is selected from the group consisting of

(i) unsubstituted phenyl and phenyl substituted with up to five substituents independently selected from the group consisting of alkyl, heteroalkyl, alkoxy, alkylthio, phenoxy, phenylthio, diphenylphosphinyl, diphenylphosphoryl and disubstituted amino group, wherein the substituents on the nitrogen atom of the amino group are independently selected from the group consisting of phenyl and alkyl,

(ii) H, alkyl, heteroalkyl, alkoxy, alkylthio, phenoxy, phenylthio, diphenylphosphinyl, diphenylphosphoryl and disubstituted amino group, wherein the substituents on the nitrogen atom of the amino group are independently selected from the group consisting of phenyl and alkyl, and

(iii) five-membered ring heteroaryl selected from the group consisting of thienyl, furyl, pyrrolyl, diazolyl, triazolyl, oxazolyl, thiazolyl, oxadiazolyl and thiadiazolyl, wherein the heteroaryl may be unsubstituted or substituted with one or more substituents independently selected from the group consisting of alkyl, heteroalkyl, alkoxy, alkylthio, phenoxy, phenylthio, diphenylphosphinyl, and disubstituted amino group, wherein the substituents on the nitrogen atom of the amino group are independently selected from the group consisting of phenyl and alkyl,

b) R 2 -R 13 are independently selected from the group consisting of H, alkyl, heteroalkyl, alkoxy, alkylthio, phenoxy, phenylthio, diphenylphosphinyl, diphenylphosphoryl and disubstituted amino group, wherein the substituents on the nitrogen atom of the amino group are independently selected from the group consisting of phenyl and alkyl, and

c) X is selected from the group consisting of O and S.

2. The compound according to claim 1 , wherein R 1 is phenyl and/or any of R 2 -R 13 is H.

3. A semiconducting material comprising at least one compound according to claim 1 .

4. The semiconducting material according to claim 3 further comprising at least one dopant.

5. The semiconducting material according to claim 4 , wherein the dopant is an electrical dopant.

6. The semiconducting material according to claim 5 , wherein the electrical dopant is a n-dopant.

7. The semiconducting material according to claim 6 , wherein the n-dopant is selected from a metal, a metal salt or a metal complex.

8. An electronic device comprising the semiconducting material according to claim 3 .

9. The electronic device according to claim 8 , wherein the semiconducting material forms at least one layer arranged between an anode and a cathode.

10. The electronic device according to claim 9 , wherein the layer comprising the semiconducting material is an electron transporting layer, an electron injecting layer, a charge generating layer, or fulfils both electron transporting and hole blocking function.

11. The electronic device according to claim 8 , which is a light emitting device.

12. The electronic device according to claim 11 , which is an organic light emitting diode.

13. The electronic device according to claim 8 , wherein the semiconducting material is arranged between two electrodes.