Spin current magnetization reversing element, magnetoresistance effect element, magnetic memory, and magnetic device

1. A magnetoresistance effect element, comprising:

a spin orbit torque wiring layer that extends in one direction;

a first ferromagnetic layer that is on a first surface of the spin orbit torque wiring layer;

a first insulating layer that is on a second surface of the spin orbit torque wiring layer, the second surface being on a side opposite to the first surface;

a second insulating layer that is on the first surface excluding the first surface contacting with the first ferromagnetic layer;

a heat-dissipating layer that is on a part of a surface of the second insulating layer;

a nonmagnetic layer; and

a second ferromagnetic layer, wherein:

the nonmagnetic layer and the second ferromagnetic layer are on a side of the first ferromagnetic layer opposite to the spin orbit torque wiring layer;

the first insulating layer contains silicon nitride and a plurality of grains of boron nitride with a particle diameter of 0.5 nm to 10 nm;

in the first insulating layer, area percentage of the silicon nitride is 70% to 97% and area percentage of the boron nitride is 3% to 30%, and

the plurality of grains of boron nitride are distributed in the first insulating layer in a direction parallel to an interface with the spin orbit torque layer.

2. The magnetoresistance effect element according to claim 1 , wherein the second insulating layer contains silicon nitride as a major component.

3. The magnetoresistance effect element according to claim 1 , wherein the heat-dissipating layer contains a metal nitride as a major component.

4. The magnetoresistance effect element according to claim 1 , wherein a cap layer containing MgO or AB 2 O 4 (A=Mg or Zn, B=Al, Ga, or In) having a spinel structure is provided on a surface of the second ferromagnetic layer on a side of the second ferromagnetic layer opposite to the nonmagnetic layer.

5. The magnetoresistance effect element according to claim 1 , further comprising a semiconductor element formed on a surface of the first insulating layer on a side of the first insulating layer opposite to the spin orbit torque wiring layer.

6. A magnetic memory comprising the magnetoresistance effect element according to claim 1 .

7. A magnetic device comprising an LSI substrate, wherein the magnetic memory according to claim 6 is mounted as a built-in memory in the LSI substrate.

8. The magnetoresistance effect element according to claim 1 , further comprising a cap layer that is formed on a surface of the second ferromagnetic layer on a side of the second ferromagnetic layer opposite to the nonmagnetic layer.

9. The magnetoresistance effect element according to claim 8 , further comprising a mask layer that is formed on a surface of the cap layer on a side of the cap layer opposite to the second ferromagnetic layer.

10. A magnetoresistance effect element, comprising:

a spin orbit torque wiring layer that extends in one direction;

a first ferromagnetic layer that is on a first surface of the spin orbit torque wiring layer;

a first insulating layer that is on a second surface of the spin orbit torque wiring layer, the second surface being on a side opposite to the first surface;

a second insulating layer that is on the first surface excluding the first surface contacting with the first ferromagnetic layer;

a heat-dissipating layer that is on part of a surface of the second insulating layer;

a nonmagnetic layer stacked on the first ferromagnetic layer;

a second ferromagnetic layer stacked on the nonmagnetic layer; and

a cap layer that is formed on a surface of the second ferromagnetic layer on a side of the second ferromagnetic layer opposite to the nonmagnetic layer,

wherein the nonmagnetic layer and the second ferromagnetic layer are on a side of the first ferromagnetic layer opposite to the spin orbit torque wiring layer,

the first insulating layer contains a plurality of grains of boron nitride or aluminum nitride with a particle diameter of 0.5 nm to 10 nm,

the plurality of grains of boron nitride or aluminum nitride are distributed in the first insulating layer in a direction parallel to an interface with the spin orbit torque wiring layer,

the second ferromagnetic layer is a vertically magnetized film, and

the cap layer contains AB 2 O 4 having a spinel structure, where in A is one of Mg and Zn and B is one of Al, Ga, and In.