Stacked photoelectric conversion device and method for producing same

1. A method for manufacturing a stacked photoelectric conversion device, the method comprising:

forming an intermediate transparent conductive layer on a light-receiving surface of a crystalline silicon-based photoelectric conversion unit comprising a crystalline silicon substrate; and

forming a thin-film photoelectric conversion unit on the intermediate transparent conductive layer,

wherein the stacked photoelectric conversion device comprises:

the crystalline silicon-based photoelectric conversion unit;

the intermediate transparent conductive layer; and

the thin-film photoelectric conversion unit,

wherein the light-receiving surface of the crystalline silicon-based photoelectric conversion unit has a textured surface comprising a plurality of projections and recesses,

wherein the textured surface has an average height of 0.5 μm or more,

wherein the intermediate transparent conductive layer completely fills the recesses of the textured surface and covers the tops of the projections of the textured surface, and

wherein at least a part of the thin-film photoelectric conversion unit is deposited by a wet method.

2. The method according to claim 1 , wherein the intermediate transparent conductive layer has a surface adjacent to the thin-film photoelectric conversion unit having an average height of 500 nm or less.

3. The method according to claim 1 , wherein forming the intermediate transparent conductive layer comprises:

depositing a first conductive oxide layer by a metal organic chemical vapor deposition (MOCVD) method; and

forming a heterogeneous layer on a surface of the first conductive oxide layer,

wherein the first conductive oxide layer fills the recesses and covers the tops of the projections.

4. The method according to claim 3 , wherein forming the heterogeneous layer comprises depositing a second conductive oxide layer on the first conductive oxide layer by a sputtering method.

5. The method according to claim 3 , wherein forming the heterogeneous layer comprises subjecting the surface of the first conductive oxide layer to a plasma exposure.

6. The method according to claim 5 , wherein the plasma exposure is performed by reactive ion etching.

7. The method according to claim 3 , wherein the first conductive oxide layer is a zinc oxide.

8. The method according to claim 1 , wherein the intermediate transparent conductive layer is formed by a wet method.

9. The method according to claim 1 , wherein the average height is of 0.5 to 2 μm.

10. The method according to claim 1 , wherein the thin-film photoelectric conversion unit contains a perovskite-type crystal material.

11. The method according to claim 1 , wherein the intermediate transparent conductive layer has a surface adjacent to the thin-film photoelectric conversion unit having an average height of 250 nm or less.

12. The method according to claim 1 , wherein a thickness of the intermediate transparent conductive layer is larger than a maximum height of the textured surface of the crystalline silicon-based photoelectric conversion unit.

13. The method according to claim 12 , wherein a thickness of the intermediate transparent conductive layer is 1 μm or more.

14. The method according to claim 12 , wherein a thickness of the intermediate transparent conductive layer is 1.5 μm or more.

15. The method according to claim 1 , wherein a thickness of the intermediate transparent conductive layer is 1 μm or more.

16. The method according to claim 1 , wherein a thickness of the intermediate transparent conductive layer is 1.5 μm or more.