IP Library › Granted Patent US 10,944,146
Granted Patent B2
US 10,944,146 · App. 16/338,229 · Granted Mar 9, 2021

Dielectric waveguide having a dielectric waveguide body and a dielectric waveguide end with specified densities and method of producing

Inventors: Hiroyuki Yoshimoto (Osaka, JP); Dai Fukami (Osaka, JP); Taku Yamanaka (Osaka, JP); Masahiro Horibe (Tsukuba, JP); Yuto Kato (Tsukuba, JP); Ryo Sakamaki (Tsukuba, JP)
Assignees: DAIKIN INDUSTRIES, LTD.; NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
H01P3/16H01P5/087H01P11/006
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Quick Facts
Patent No.
US 10,944,146
App. No.
16/338,229
Granted
Mar 9, 2021
Kind
B2
Abstract

The invention provides a dielectric waveguide for transmitting millimeter waves or sub-millimeter waves. The dielectric waveguide is easily processed and connected even when having a small diameter, and can provide a connection structure exhibiting low transmission and return losses of high frequency signals. The dielectric waveguide includes a dielectric waveguide body and a dielectric waveguide end having a lower permittivity than the dielectric waveguide body. The dielectric waveguide body and the dielectric waveguide end are seamlessly and monolithically formed from the same material.

Claims (36)

1. A method for producing a dielectric waveguide, comprising:

a step of providing a resin line formed from polytetrafluoroethylene;

a step of heating the resin line at 326° C. to 345° C. for 10 seconds to 2 hours;

a step of heating an end of the resin line; and

a step of stretching the heated end in a longitudinal direction to provide a dielectric waveguide.

2. The production method according to claim 1 ,

wherein the step of heating is performed at a temperature of 100° C. or higher and 450° C. or lower.

3. A dielectric waveguide comprising:

a dielectric waveguide body; and

a dielectric waveguide end having a lower permittivity than the dielectric waveguide body,

the dielectric waveguide body and the dielectric waveguide end being seamlessly and monolithically formed from a same material,

wherein the dielectric waveguide body has a density of 1.90 g/cm 3 or higher and 2.40 g/cm 3 or lower, and

the dielectric waveguide end has a density that is 90% or less of the density of the dielectric waveguide body.

4. The dielectric waveguide according to claim 3 ,

wherein the dielectric waveguide body has a permittivity of 2.05 or higher and 2.30 or lower, and

the dielectric waveguide end has a permittivity that is (i) lower than the permittivity of the dielectric waveguide body and that is (ii) 2.20 or lower, where both (i) and (ii) are satisfied.

5. The dielectric waveguide according to claim 3 ,

wherein the dielectric waveguide body has a hardness of 95 or higher which is a spring hardness determined pursuant to JIS K6253-3.

6. The dielectric waveguide according to claim 3 ,

wherein the dielectric waveguide body has a loss tangent at 2.45 GHz of 1.20×10 −4 or lower.

7. The dielectric waveguide according to claim 3 ,

wherein the dielectric waveguide is obtainable by stretching an end of a resin line in a longitudinal direction.

8. The dielectric waveguide according to claim 3 ,

wherein the dielectric waveguide is formed from polytetrafluoroethylene.

9. A connection structure comprising:

a hollow metallic tube; and

the dielectric waveguide according to claim 3 ,

the dielectric waveguide end being inserted in the hollow metallic tube and thereby the hollow metallic tube and the dielectric waveguide being connected to each other.

10. The connection structure according to claim 9 ,

wherein the hollow metallic tube has a cavity filled with gas, and the gas has a lower permittivity than the dielectric waveguide end.

11. A dielectric waveguide comprising:

a dielectric waveguide body; and

a dielectric waveguide end having a lower density than the dielectric waveguide body,

the dielectric waveguide body and the dielectric waveguide end being seamlessly and monolithically formed from a same material,

wherein the dielectric waveguide body has a density of 1.90 g/cm 3 or higher and 2.40 g/cm 3 or lower, and

the dielectric waveguide end has a density that is 90% or less of the density of the dielectric waveguide body.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 2, 2019
From: YOSHIMOTO, HIROYUKI; FUKAMI, DAI; YAMANAKA, TAKU; HORIBE, MASAHIRO; KATO, YUTO; SAKAMAKI, RYO
To: DAIKIN INDUSTRIES, LTD.; NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Reel/Frame 048769/0418 →
Priority Claims (1)
JP 2016-194728 · Sep 30, 2016 · national
Continuity (1)
Related Publication 20200036074A1 · Jan 30, 2020
Cited By (2)
US 12,451,577 US 12,519,199