IP Library › Granted Patent US 10,944,379
Granted Patent B2
US 10,944,379 · App. 15/379,392 · Granted Mar 9, 2021

Hybrid passive-on-glass (POG) acoustic filter

Inventors: David Francis Berdy (San Diego, CA); Changhan Hobie Yun (San Diego, CA); Shiqun Gu (San Diego, CA); Niranjan Sunil Mudakatte (San Diego, CA); Mario Francisco Velez (San Diego, CA); Chengjie Zuo (San Diego, CA); Jonghae Kim (San Diego, CA)
Assignee: Qualcomm Incorporated
H03H9/0552H03H3/02H03H3/08H03H9/059H03H9/0523H03H9/0547H03H9/0561H03H9/0571H03H9/0576H03H9/64H03H9/703H03H9/72
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Quick Facts
Patent No.
US 10,944,379
App. No.
15/379,392
Granted
Mar 9, 2021
Kind
B2
Abstract

An integrated radio frequency (RF) circuit combines complementary features of passive devices and acoustic filters and includes a first die, a second die, and a third die. The first die includes a substrate having one or more passive devices. The second die includes a first acoustic filter. The second die is stacked and coupled to a first surface of the first die. The third die includes a second acoustic filter. The third die is stacked and coupled to a second surface opposite the first surface of the first die.

Claims (27)

1. An integrated radio frequency circuit, comprising:

a passive-on-glass filter including a first die comprising a glass substrate including at least one passive device, the at least one passive device comprising at least one of an inductor and a capacitor;

a second die comprising a surface acoustic wave (SAW) filter, the second die coupled to a first surface of the first die; and

a third die comprising a bulk acoustic wave (BAW) filter, the third die coupled to a second surface opposite the first surface of the first die, the first surface and the second surface being planar surfaces.

2. The integrated radio frequency circuit of claim 1 , in which the first die comprises integrated passive devices (IPDs), and the second die is directly coupled to a passive device layer of the first die.

3. The integrated radio frequency circuit of claim 2 , in which the IPDs comprise two-dimensional (2D) passive devices or three-dimensional (3D) passive devices.

4. The integrated radio frequency circuit of claim 1 , in which the first die comprises passive-on-glass (POG) devices, and the second die is directly coupled to the POG devices of the first die.

5. The integrated radio frequency circuit of claim 4 , in which the POG devices comprise two-dimensional (2D) passive devices or three-dimensional (3D) passive devices.

6. The integrated radio frequency circuit of claim 1 , in which the third die is coupled to the second die by a via through the first die.

7. The integrated radio frequency circuit of claim 6 , in which the first die comprises glass and the via comprises a through glass via.

8. The integrated radio frequency circuit of claim 1 , further comprising a fourth die comprising a third acoustic filter coupled to the first surface of the first die.

9. The integrated radio frequency circuit of claim 1 , further comprising a fifth die comprising a fourth acoustic filter coupled to the second surface of the first die.

10. The integrated radio frequency circuit of claim 1 , incorporated into a multiplexer.

11. A method of fabricating an integrated radio frequency circuit, comprising:

fabricating a passive-on-glass filter including a first die comprising a glass substrate including at least one passive device, the at least one passive device comprising at least one of an inductor and a capacitor;

fabricating a second die comprising a surface acoustic wave (SAW) filter;

stacking the second die on a first surface of the first die, the second die communicatively coupled to the first die;

fabricating a third die comprising a bulk acoustic wave (BAW) filter; and

stacking the third die to a second surface opposite the first surface of the first die, the third die communicatively coupled to the first die, the first surface and the second surface being planar surfaces.

12. The method of fabricating the integrated radio frequency circuit of claim 11 , further comprising directly coupling the second die to a passive device layer of the first die.

13. The method of fabricating the integrated radio frequency circuit of claim 11 , further comprising directly coupling the second die to passive-on-glass (POG) devices of the first die.

14. The method of fabricating the integrated radio frequency circuit of claim 11 , further comprising coupling the third die to the second die by a via through the first die.

15. The method of fabricating the integrated radio frequency circuit of claim 11 , further comprising stacking and coupling a third acoustic filter of a fourth die to the first surface of the first die.

16. The method of fabricating the integrated radio frequency circuit of claim 11 , further comprising stacking and coupling a fourth acoustic filter of a fifth die to the second surface of the first die.

17. The method of fabricating the integrated radio frequency circuit of claim 11 , in which the first die comprises integrated passive devices (IPDs).

18. The method of fabricating the integrated radio frequency circuit of claim 17 , in which the IPDs comprise two-dimensional (2D) passive devices and/or three-dimensional (3D) passive devices.

19. The method of fabricating the integrated radio frequency circuit of claim 11 , further comprising integrating the integrated radio frequency circuit into a multiplexer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 10, 2017
From: BERDY, DAVID FRANCIS; YUN, CHANGHAN HOBIE; GU, SHIQUN; MUDAKATTE, NIRANJAN SUNIL; VELEZ, MARIO FRANCISCO; ZUO, CHENGJIE; KIM, JONGHAE
To: QUALCOMM INCORPORATED
Reel/Frame 042324/0014 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 21, 2017
From: BERDY, DAVID FRANCIS; YUN, CHANGHAN HOBIE; GU, SHIQUN; MUDAKATTE, NIRANJAN SUNIL; VELEZ, MARIO FRANCISCO; ZUO, CHENGJIE; KIM, JONGHAE
To: QUALCOMM INCORPORATED
Reel/Frame 042119/0251 →
Continuity (1)
Related Publication 20180167054A1 · Jun 14, 2018