Dielectric, capacitor and semiconductor device including the same, and method of preparing the dielectric
Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group: A x B y O 3-δ <Formula 1> wherein, in Formula 1, A is a monovalent, divalent, or trivalent cation, B is a trivalent, tetravalent, or pentavalent cation, and 0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.
1. A dielectric comprising:
an oxide comprising a composition represented by Formula 1 and comprising a perovskite type crystal structure belonging to a polar space group or a non-polar space group other than a Pbnm space group,
wherein the oxide is an aggregate of primary particles, and
A x B y O 3-δ <Formula 1>
wherein, in Formula 1,
A is a monovalent, divalent, or trivalent cation,
B is a trivalent, tetravalent, or pentavalent cation, and
0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.
2. The dielectric of claim 1 , wherein the oxide has a dielectric constant about 55 or higher at 1 MHz.
3. The dielectric of claim 1 , wherein the polar space group comprises a Pc2 1 n space group, and the non-polar space group comprises a Pcmn, P4/mbm, Pm-3m, or Cmcm space group.
4. The dielectric of claim 1 , wherein the oxide comprises a composition represented by Formula 2:
A x B y O 3 , <Formula 2>
wherein, in Formula 2,
A is a monovalent cation,
B is a pentavalent cation, and
0.9≤x≤1.5 and 0.9≤y≤1.5.
5. The dielectric of claim 1 , wherein A comprises at least one selected from an alkali metal element and an alkaline earth metal element.
6. The dielectric of claim 1 , wherein A comprises at least one selected from lithium (Li), sodium (Na), potassium (K), rubidium (Rb), and cesium (Cs).
7. The dielectric of claim 1 , wherein B is a transition metal element.
8. The dielectric of claim 1 , wherein B comprises at least one selected from vanadium (V), niobium (Nb), and tantalum (Ta).
9. The dielectric of claim 1 , wherein A comprises at least one selected from Li, Na, K, Rb, and Cs, and B comprises at least one selected from V, Nb, and Ta.
10. The dielectric of claim 1 , wherein the oxide comprises at least one selected from Na 1−x K x TaO 3 (0≤x≤1), Na 1−x Li x TaO 3 (0≤x≤1), Na 1−x K x TaO 3 (0≤x≤1), Na 1−x Rb x TaO 3 (0≤x≤1), Na 1−x Cs x TaO 3 (0≤x≤1), Na 1−x K x VO 3 (0≤x≤1), Na 1−x Li x VO 3 (0≤x≤1), Na 1−x K x VO 3 (0≤x≤1), Na 1−x Rb x VO 3 (0≤x≤1), Na 1−x Cs x VO 3 (0≤x≤1), Na 1−x K x NbO 3 (0≤x≤1), Na 1−x Li x NbO 3 (0≤x≤1), Na 1−x K x NbO 3 (0≤x≤1), Na 1−x Rb x NbO 3 (0≤x≤1), Na 1−x Cs x NbO 3 (0≤x≤1), K 1−x Li x TaO 3 (0≤x≤1), K 1−x Rb x TaO 3 (0≤x≤1), K 1−x Cs x TaO 3 (0≤x≤1), K 1−x Li x VO 3 (0≤x≤1), K 1−x Rb x VO 3 (0≤x≤1), Na 1−x Cs x VO 3 (0≤x≤1), K 1−x Li x NbO 3 (0≤x≤1), K 1−x Rb x NbO 3 (0≤x≤1), and K 1−x Cs x NbO 3 (0≤x≤1).
11. The dielectric of claim 1 , wherein the oxide comprises at least one selected from NaTaO 3 , LiTaO 3 , KTaO 3 , RbTaO 3 , CsTaO 3 , NaVO 3 , and NaNbO 3 .
12. The dielectric of claim 1 , wherein the primary particles have an average particle diameter in a range of 1 um to 10 um.
13. The dielectric of claim 1 , wherein the oxide is porous.
14. The dielectric of claim 1 , wherein the dielectric has relative density of 60% more when measured according to a buoyancy method of the oxide.
15. The dielectric of claim 1 , wherein the oxide has a dielectric loss, tan δ, of 0.11 or less.
16. The dielectric of claim 1 , wherein the oxide has a band gap of 3 eV or more.
17. A capacitor comprising:
a first electrode;
a second electrode; and
a dielectric between the first electrode and the second electrode,
wherein the dielectric comprises an oxide comprising a composition represented by Formula 1 and comprises a perovskite type crystal structure belonging to a polar space group or a non-polar space group other than a Pbnm space group,
wherein the oxide is an aggregate of primary particles, and
A x B y O 3-δ <Formula 1>
wherein, in Formula 1,
A is a monovalent, divalent, or trivalent cation,
B is a trivalent, tetravalent, or pentavalent cation, and
0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.
18. A semiconductor device comprising:
a dielectric,
wherein the dielectric comprises an oxide comprising a composition represented by Formula 1 and comprises a perovskite type crystal structure belonging to a polar space group or a non-polar space group other than a Pbnm space group,
wherein the oxide is an aggregate of primary particles, and
A x B y O 3-δ <Formula 1>
wherein, in Formula 1,
A is a monovalent, divalent, or trivalent cation,
B is a trivalent, tetravalent, or pentavalent cation, and
0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.
19. A method of preparing a dielectric, the method comprising:
mixing an alkali metal or an alkaline earth metal with a transition metal precursor to prepare a mixture;
performing a first thermal process on the mixture in an air atmosphere at a temperature in a range of 1,000° C. to 1,400° C. for 1 hour to 20 hours to prepare a first sintered material;
molding and pressurizing the first sintered material to prepare a molded article; and
performing a second thermal process on the molded article at a temperature of 1,400° C. or higher for 1 hour to 20 hours to prepare a second sintered material,
wherein the dielectric comprises an oxide comprising a composition represented by Formula 1 and comprises a perovskite type crystal structure belonging to a polar space group or a non-polar space group other than a Pbnm space group,
wherein the oxide is an aggregate of primary particles, and
A x B y O 3-δ <Formula 1>
wherein, in Formula 1,
A is a monovalent, divalent, or trivalent cation,
B is a trivalent, tetravalent, or pentavalent cation, and
0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.