Sintering furnace for components made of sintered material, in particular, dental components
The invention relates to a sintering furnace for components made of a sintered material, in particular for dental components, comprising a furnace chamber having a chamber volume (VK) and a chamber inner surface (OK), wherein a heat-up device, a receiving space having a gross volume (VB) located in the chamber volume (VK) and delimited by the heat-up device, and a useful region having a useful volume (VN) located in the gross volume (VB), are disposed in the furnace chamber. The furnace chamber has an outer wall consisting of a plurality of walls having a wall portion to be opened for introduction into the receiving space of a component to be sintered and having an object volume (VO). In the furnace chamber the heat-up device has a thermal radiator having a radiation field which radiator is disposed on at least one side of the receiving space. Said thermal radiator has a specific resistance of 0.1 Ωmm 2 /m to 1,000,000 Ωmm 2 /m and has a total surface, the maximum of which is three times the chamber inner surface (OK). With this sintering furnace a heat-up temperature of at least 1100° C. can be achieved within 5 minutes at a maximum power input of 1.5 kW.
1. A sintering furnace for components made of a sintered material comprising:
a furnace chamber having a chamber volume (VK) and a chamber inner surface area(OK),
wherein a heating device, a receiving space having a gross volume (VB) located in the chamber volume (VK) and delimited by the heating device, and a useful region having a useful volume (VN) located in the gross volume (VB) are arranged in the furnace chamber, and
wherein the furnace chamber has an outer wall including a plurality of walls having at least one wall section to be opened for introducing a component to be sintered into the receiving space,
wherein the heating device in the furnace chamber contains at least one thermal radiator, which has a specific resistance ranging from 0.1 Ωmm 2 /m to 1,000,000 Ωmm 2 /m and a total surface area that is at between 1 and 3 times the chamber inner surface area (OK).
2. The sintering furnace according to claim 1 , wherein the chamber volume (VK) of the sintering furnace is between 50 cm 3 and 200 cm 3 .
3. The sintering furnace according to claim 1 , wherein the maximum total surface area of the thermal radiator is not larger than 400 cm 2 .
4. The sintering furnace according to claim 1 , wherein the object volume (VO) is at most 20×20×40 mm 3 .
5. The sintering furnace according to claim 1 , wherein the thermal radiator is heated in an inductive fashion.
6. The sintering furnace according to claim 1 , wherein the heating device consists of graphite, MoSi 2 , SiC, or glassy carbon.
7. The sintering furnace according to claim 1 , wherein the outer wall has a chamber inner wall that is impermeable and/or reflective to the radiation field.
8. The sintering furnace according to claim 7 , wherein the chamber inner wall has a reflective coating.
9. The sintering furnace according to claim 7 , wherein the chamber inner wall is designed as a reflector.
10. The sintering furnace according to claim 1 , wherein the thermal radiator is heated in a resistive fashion.
11. The sintering furnace according to claim 1 , wherein the thermal radiator of the heating device has a heating rate in the useful region of at least 200 K/min at 20° C.
12. The sintering furnace according to claim 1 , wherein the useful volume (VN) is at most 20×20×40 mm 3 and that the dimensions of the useful volume (VN) are at most 20 mm×20 mm×40 mm.
13. The sintering furnace according to claim 1 , wherein the thermal radiator is designed as a crucible ( 11 ).
14. The sintering furnace according to claim 1 , wherein the sintered material is for one or more dental components.
15. The sintering furnace according to claim 12 , wherein the one or more dental components are made of ceramic.
16. The sintering furnace according to claim 1 , wherein the total surface area is at most 2.5 times the chamber inner surface area (OK).