Memory system with block rearrangement to secure a free block based on read valid first and second data
A device includes a host including a main memory, and semiconductor memory including a nonvolatile semiconductor memory, memory unit, and controller. The nonvolatile semiconductor memory stores first address information. The memory unit stores second address information as part of the first address information. The controller accesses the nonvolatile semiconductor memory based on the second address information. Third address information is stored in the main memory, and is part or all of the first address information. The controller uses the third address information when accessing the nonvolatile semiconductor memory if address information to be referred is not stored in the second address information.
1. A memory system comprising:
an interface circuit configured to communicate with a host device, the host device including a first semiconductor memory;
a second semiconductor memory including a plurality of blocks including a first block, a second block, and a third block, each of the blocks being a unit of an erase operation of the second semiconductor memory, the second semiconductor memory being nonvolatile; and
a controller circuit configured to, in a case that a block rearrangement to secure a free block is executed in the memory system,
read a valid first data from the first block,
write the read first data into an area of the first semiconductor memory of the host device, the area having been designated by the host device for storing data from the memory system,
read a valid second data from the second block,
write the read second data into the area of the first semiconductor memory,
read the first data and the second data from the area of the first semiconductor memory, and
write the read first data and the read second data into the third block.
2. The memory system according to claim 1 ,
wherein the block rearrangement includes at least one of: a compaction process, a garbage collection process, a read-modify-write (RMW) process.
3. The memory system according to claim 1 ,
wherein the block rearrangement includes a read-modify-write (RMW) process,
the controller circuit is configure to integrate the valid first data and the valid second data with write data received from the host device and write the valid first data and the valid second data integrated with the write data into the third block in the RMW process.
4. The memory system according to claim 1 ,
wherein the block rearrangement is executed when a number of the free blocks becomes smaller than a threshold value.
5. The memory system according to claim 1 ,
wherein the controller circuit is configure to use a work area of the first semiconductor memory when the controller circuit reads the first data and the second data from the area of the first semiconductor memory and writes the read first data and the read second data into the third block.
6. The memory system according to claim 1 ,
wherein the third block is a free block.
7. A storage system comprising:
a host device including a first semiconductor memory; and
a memory system configured to communicate with the host device, the memory system comprising:
a second semiconductor memory including a plurality of blocks including a first block, a second block and a third block, each of the blocks being a unit of an erase operation of the second semiconductor memory, the second semiconductor memory being nonvolatile; and
a controller circuit configured to, in a case that a block rearrangement to secure a free block is executed in the memory system,
read a valid first data from the first block,
write the read first data into an area of the first semiconductor memory of the host device, the area having been designated by the host device for storing data from the memory system,
read a valid second data from the second block,
write the read second data into the area of the first semiconductor memory,
read the first data and the second data from the area of the first semiconductor memory, and
write the read first data and the read second data into the third block.
8. The storage system according to claim 7 ,
wherein the block rearrangement includes at least one of: a compaction process, a garbage collection process, a read-modify-write (RMW) process.
9. The storage system according to claim 7 ,
wherein the block rearrangement includes a read-modify-write (RMW) process,
the controller circuit is configure to integrate the valid first data and the valid second data with write data received from the host device and write the valid first data and the valid second data integrated with the write data into the third block in the RMW process.
10. The storage system according to claim 7 ,
wherein the block rearrangement is executed when a number of the free blocks becomes smaller than a threshold value.
11. The storage system according to claim 7 ,
wherein the controller circuit is configure to use a work area of the first semiconductor memory when the controller circuit reads the first data and the second data from the area of the first semiconductor memory and writes the read first data and the read second data into the third block.
12. The storage system according to claim 7 ,
wherein the third block is a free block.
13. The storage system according to claim 7 ,
wherein the host device further comprises a DMA controller configured to transfer the first data and the second data stored in the first semiconductor memory to the memory system.
14. A method for a memory system capable of communicating with a host device having a first semiconductor memory, the memory system including a second semiconductor memory including a plurality of blocks including a first block, a second block, and a third block, each of the blocks being a unit of an erase operation of the second semiconductor memory, the second semiconductor memory being nonvolatile, the method comprising:
executing a process of, in a case that a block rearrangement to secure a free block is executed in the memory system:
reading a valid first data from the first block;
writing the read first data into an area of the first semiconductor memory of the host device, the area having been designated by the host device for storing data from the memory system;
reading a valid second data from the second block;
writing the read second data into the area of the first semiconductor memory;
reading the first data and the second data from the area of the first semiconductor memory; and
writing the read first data and the read second data into the third block.
15. The method according to claim 14 ,
wherein the block rearrangement includes at least one of: a compaction process, a garbage collection process, a read-modify-write (RMW) process.
16. The method according to claim 14 ,
wherein the block rearrangement includes a read-modify-write (RMW) process, the method further comprising,
integrating the valid first data and the valid second data with write data received from the host device and writing the valid first data and the valid second data integrated with the write data into the third block in the RMW process.
17. The method according to claim 14 ,
wherein the block rearrangement is executed when a number of the free blocks becomes smaller than a threshold value.
18. The method according to claim 14 , further comprising:
using a work area of the first semiconductor memory when the controller circuit reads the first data and the second data from the area of the first semiconductor memory and writes the read first data and the read second data into the third block.
19. The method according to claim 14 ,
wherein the third block is a free block.