Microdisplay with reduced pixel size and method of forming same
A vertically stacked pixel circuit is provided that includes a high voltage device for driving a pixel on an upper silicon layer, and low voltage circuitry (such as matrix addressing circuitry, data storage circuitry and uniformity compensation circuitry) on a lower silicon layer. The circuitry on the upper and lower silicon layers are electrically connected via a through-silicon via. This unique arrangement allows the high voltage device for driving a pixel to be physically located on top of the larger number of low voltage devices in the lower silicon layer in order to achieve a substantial reduction in overall pixel emission area. The vertically stacked pixel circuit is particularly suited for organic light-emitting diode microdisplays.
1. A vertically stacked pixel circuit, comprising:
a lower portion comprising (1) low voltage circuitry that includes at least one low voltage transistor and (2) data storage circuitry that includes at least one trench capacitor; and
an upper portion, disposed above the lower portion, comprising at least one high voltage transistor and pixel drive circuitry configured to drive a first organic light-emitting diode (OLED), wherein the upper portion includes a first through-silicon via (TSV) and at least one high voltage transistor;
wherein the upper and lower portions are electrically connected via a single electrical connection point that includes the first TSV.
2. The circuit of claim 1 , wherein the high voltage transistor has an operating voltage that is greater than 3 volts, and wherein the at least one low voltage transistor has an operating voltage of 3 volts or lower.
3. The circuit of claim 1 , wherein the lower portion further includes (3) matrix-addressing circuitry and (4) uniformity-compensation circuitry.
4. The circuit of claim 1 wherein the upper portion is formed on a first silicon layer and the lower portion is formed on a second silicon layer, and wherein the first silicon layer and second silicon layer are bonded together.
5. The circuit of claim 1 , wherein the upper portion further comprises the first OLED.
6. The circuit of claim 1 , wherein a length and width of the circuit are less than 4 μm×4 μm.
7. A vertically stacked pixel circuit, comprising:
a lower portion comprising (1) low voltage circuitry that includes at least one low voltage transistor having an operating voltage of 3 volts or lower and (2) data storage circuitry that includes at least one trench capacitor; and
an upper portion, disposed above the lower portion, comprising a first organic light-emitting diode (OLED) and pixel drive circuitry configured to drive the first OLED, wherein the upper portion includes a first through-silicon via (TSV) and high voltage circuitry that includes at least one high voltage transistor having an operating voltage greater than 3 volts;
wherein the upper and lower portions are electrically connected via a single electrical connection point that includes the first TSV.
8. The pixel circuit of claim 7 , wherein the lower portion further comprises matrix addressing circuitry and uniformity compensation circuitry.
9. The pixel circuit of claim 8 , wherein the matrix addressing circuitry comprises a selection switch and the trench capacitor is a storage capacitor.
10. The pixel circuit of claim 7 , wherein the lower portion and the upper portion are formed on respective silicon layers.
11. The pixel circuit of claim 10 , wherein the silicon layer containing the lower portion and the silicon layer containing the upper portion are bonded together.
12. The pixel circuit of claim 10 , wherein a length and width of the pixel circuit are less than 4 μm×4 μm.
13. A microdisplay comprising a plurality of sub-pixels, wherein each sub-pixel comprises the pixel drive circuit of claim 7 .