Semiconductor memory device

1. A semiconductor memory device, comprising:

a plurality of first conductive layers stacked in a first direction;

a plurality of second conductive layers stacked in the first direction and spaced from the plurality of first conductive layers in a second direction intersecting the first direction;

a first memory pillar between the plurality of first conductive layers and the plurality of second conductive layers in the second direction, the first memory pillar extending in the first direction, having a first length in the second direction, and including a first semiconductor layer extending in the first direction, a first charge storage film, between the first semiconductor layer and the plurality of first conductive layers, and a second charge storage film, between the first semiconductor layer and the plurality of second conductive layers; and

a second memory pillar between the plurality of first conductive layers and the plurality of second conductive layers in the second direction, the second memory pillar being adjacent to the first memory pillar, extending in the first direction, having a second length greater than the first length in the second direction, and including a second semiconductor layer extending in the first direction and a third charge storage film.

2. The semiconductor memory device according to claim 1 , wherein

the plurality of first conductive layers includes a first linear portion,

the plurality of second conductive layers includes a second linear portion, and

the first memory pillar is between the first linear portion and the second linear portion.

3. The semiconductor memory device according to claim 2 , wherein

the first linear portion and the second linear portion extend in a third direction intersecting the first direction and the second direction and

the first linear portion and the second linear portion are opposed to each other.

4. The semiconductor memory device according to claim 1 , wherein

the plurality of first conductive layers includes a first curved portion,

the plurality of second conductive layers includes a second curved portion, and

the second memory pillar is between the first curved portion and the second curved portion.

5. The semiconductor memory device according to claim 4 , wherein

the first curved portion and the second curved portion each have an arc shape.

6. The semiconductor memory device according to claim 1 , wherein

an outer circumference of a cross section, taken perpendicular to the first direction, of the first memory pillar has a rectangular shape, and

an outer circumference of a cross section, taken perpendicular to the first direction, of the second memory pillar has an elongated circular shape.

7. The semiconductor memory device according to claim 1 , wherein

an outer circumference of a cross section, taken perpendicular to the first direction, of the first semiconductor layer has a rectangular shape, and

an outer circumference of a cross section, taken perpendicular to the first direction, of the second semiconductor layer has an elongated circular shape.

8. The semiconductor memory device according to claim 1 , wherein

the first memory pillar and the second memory pillar each comprise a first silicon oxide film, a silicon nitride film, and a second silicon oxide film, which are sequentially provided from the plurality of first conductive layers.

9. The semiconductor memory device according to claim 1 , wherein

the first memory pillar and the second memory pillar each further include a block insulating film and a tunnel insulating film.

10. The semiconductor memory device according to claim 1 , further comprising:

a plurality of first memory pillars and a plurality of second memory pillars alternately arranged.

11. The semiconductor memory device according to claim 1 , wherein the third charge storage film surrounds the second semiconductor layer.