Packages for power modules with integrated passives
Provided herein is a module for packaging semiconductors comprising: at least one PDC comprising parallel internal electrodes of alternating polarity with a paraelectric dielectric between adjacent internal electrodes wherein the paraelectric dielectric has a permittivity above 10 to no more than 300; and wherein the PDC forms a capacitor couple with at least one semiconductor.
1. A module for packaging semiconductors comprising:
at least one PDC comprising parallel internal electrodes of alternating polarity with a paraelectric dielectric between adjacent internal electrodes wherein said paraelectric dielectric has a permittivity above 10 to no more than 300;
wherein said PDC forms a capacitor couple with at least one semiconductor device; and
wherein said PDC has a voltage rating of 500V to 10,000V with a capacitance per unit volume of at least 1.0 μF/cc rated at 500V and a capacitance per unit volume of at least 0.003 μF/cc rated 10,000V.
2. The module for packaging semiconductors of claim 1 wherein said PDC is embedded in a structural substrate.
3. The module for packaging semiconductors of claim 2 further comprising at least one capacitive couple termination in electrical contact with alternating internal electrodes.
4. The module for packaging semiconductors of claim 3 wherein said capacitive couple termination comprises at least one metal selected from the group consisting of Cu, Ni, W, Ag, Pd, Pt and Au.
5. The module for packaging semiconductors of claim 3 wherein said capacitive couple termination is selected from an external termination and a via.
6. The module for packaging semiconductors of claim 2 further comprising at least one PDC interface pad.
7. The module for packaging semiconductors of claim 6 wherein said semiconductor device is in electrical contact with said PDC interface pad.
8. The module for packaging semiconductors of claim 7 wherein said PDC interface pad is connected to said semiconductor device by solder balls, solder pillars or wire bonding.
9. The module for packaging semiconductors of claim 2 wherein further comprising internal electrodes encased in said structural substrate.
10. The module for packaging semiconductors of claim 1 wherein said internal electrodes comprise at least one metal selected from the group consisting of Cu, Ni, Al, W, Ag, Pd, Pt and Au.
11. The module for packaging semiconductors of claim 7 wherein said internal electrodes comprises Ni.
12. The module for packaging semiconductors of claim 1 wherein said permittivity is at least 25 to no more than 175.
13. The module for packaging semiconductors of claim 1 wherein said paraelectric dielectric is a C0G dielectric.
14. The module for packaging semiconductors of claim 1 wherein said paraelectric dielectric comprises calcium zirconate.
15. The module for packaging semiconductors of claim 14 wherein said paraelectric dielectric comprises at least 50 wt. % calcium zirconate.
16. The module for packaging semiconductors of claim 1 wherein said PDC has a voltage rating of 1V to 20,000V.
17. The module for packaging semiconductors of claim 1 having a temperature range rated for operation at −65 to 300° C.
18. The module for packaging semiconductors of claim 1 wherein said PDC comprises at least one thermal dissipation channel.
19. The module for packaging semiconductors of claim 18 wherein at least one said thermal dissipation channel selected from parallel to said internal electrodes and perpendicular to said internal electrodes.
20. The module for packaging semiconductors of claim 18 wherein said PDC is between said semiconductor and a cooling device.
21. The module for packaging semiconductors of claim 20 wherein said cooling device is selected from a passive device and an active device.
22. The module for packaging semiconductors of claim 1 further comprising at least one semiconductor device in electrical contact with said PDC.
23. The module for packaging semiconductors of claim 22 wherein said semiconductor device is selected from the group consisting of a transistor, a capacitor, a diode, a resistor, a varistor, an inductor, a fuse, an integrated circuits, an overvoltage discharge device, a sensor, a switch, an electrostatic discharge suppressor, an inverter, a rectifier and a filter.
24. The module for packaging semiconductors of claim 1 wherein said PDC comprises a via.
25. The module for packaging semiconductors of claim 24 wherein at least one internal electrode of said internal electrodes is in electrical contact with an external termination through said via.
26. The module for packaging semiconductors of claim 1 further comprising a thermal dissipation layer.
27. The module for packaging semiconductors of claim 26 wherein said thermal dissipation layer is between said PDC and said semiconductor.
28. The module for packaging semiconductors of claim 27 further comprising at least one via through said thermal dissipation layer.
29. The module for packaging semiconductors of claim 28 wherein said via is an insulated via.
30. The module for packaging semiconductors of claim 27 wherein said thermal dissipation layer has a lower dielectric constant than the paraelectric dielectric.
31. A power supply comprising the module of claim 1 .
32. A module for packaging semiconductors comprising:
at least one PDC comprising parallel internal electrodes of alternating polarity with a paraelectric dielectric between adjacent internal electrodes wherein said paraelectric dielectric has a permittivity above 10 to no more than 300;
wherein said PDC forms a capacitor couple with at least one semiconductor device; with said module having a peak operational temperature in a range from 150 to 300° C.
33. The module for packaging semiconductors of claim 32 wherein said PDC has a voltage rating of 500V to 10,000V with a capacitance per unit volume of at least 1.0 μF/cc rated at 500V and a capacitance per unit volume of at least 0.003 μF/cc rated 10,000V.