High-frequency module

1. A high-frequency module comprising:

a substrate;

a first electronic component and a second electronic component each provided on the substrate;

an insulating layer covering a one part of a side surface of the first electronic component, and a side surface and a top surface of the second electronic component;

a heat-dissipating layer covering at least a top surface of the first electronic component and a remaining part of the side surface of the first electronic component excluding the one part of the side surface of the first electronic component; and

a flat layer provided on the heat-dissipating layer making a top surface of the high-frequency module flat,

wherein a thermal conductivity of the flat layer is greater than or equal to a thermal conductivity of the insulating layer,

wherein heat-generating ability of the first electronic component is higher than a heat-generating ability of the second electronic component, and

wherein the first electronic component is a power amplifier or a duplexer.

2. The high-frequency module according to claim 1 , wherein the heat-dissipating layer comprises a metal.

3. The high-frequency module according to claim 2 , wherein the heat-dissipating layer covers the top surface of the first electronic component, the remaining part of the side surface of the first electronic component excluding the one part of the side surface, and a top surface of the insulating layer,

wherein a step is provided at a top surface of the heat-dissipating layer due to a difference between a height of the top surface of the first electronic component and a height of the top surface of the insulating layer.

4. The high-frequency module according to claim 2 , wherein an elastic modulus of the insulating layer is less than an elastic modulus of the heat-dissipating layer.

5. The high-frequency module according to claim 2 , wherein a thermal conductivity of the heat-dissipating layer is greater than or equal to a thermal conductivity of the insulating layer.

6. The high-frequency module according to claim 1 , wherein the heat-dissipating layer covers the top surface of the first electronic component, the remaining part of the side surface of the first electronic component excluding the one part of the side surface, and a top surface of the insulating layer,

wherein a step is provided at a top surface of the heat-dissipating layer due to a difference between a height of the top surface of the first electronic component and a height of the top surface of the insulating layer.

7. The high-frequency module according to claim 6 , wherein an elastic modulus of the insulating layer is less than an elastic modulus of the heat-dissipating layer.

8. The high-frequency module according to claim 6 , wherein a thermal conductivity of the heat-dissipating layer is greater than or equal to a thermal conductivity of the insulating layer.

9. The high-frequency module according to claim 1 , wherein an elastic modulus of the insulating layer is less than an elastic modulus of the heat-dissipating layer.

10. The high-frequency module according to claim 1 , wherein a thermal conductivity of the heat-dissipating layer is greater than or equal to a thermal conductivity of the insulating layer.

11. The high-frequency module according to claim 1 , further comprising:

a ground conductor provided in the substrate,

wherein the heat-dissipating layer is connected to the ground conductor.

12. The high-frequency module according to claim 1 , wherein the heat-dissipating layer is disposed on and extends along part of the side surface of the first electronic component.

13. A high-frequency module comprising:

a substrate;

a first electronic component and a second electronic component each provided on the substrate;

an insulating layer covering a one part of a side surface of the first electronic component, and a side surface and a top surface of the second electronic component; and

a heat-dissipating layer covering at least a top surface of the first electronic component and a remaining part of the side surface of the first electronic component excluding the one part of the side surface of the first electronic component,

wherein a top surface of the heat-dissipating layer is flat and extends over the first electronic component and the second electronic component.

14. The high-frequency module according to claim 13 , wherein an elastic modulus of the insulating layer is less than an elastic modulus of the heat-dissipating layer.

15. The high-frequency module according to claim 13 , wherein a thermal conductivity of the heat-dissipating layer is greater than or equal to a thermal conductivity of the insulating layer.

16. A high-frequency module comprising:

a substrate;

a first electronic component and a second electronic component each provided on the substrate;

an insulating layer covering a one part of a side surface of the first electronic component, and a side surface and a top surface of the second electronic component;

a heat-dissipating layer covering at least a top surface of the first electronic component and a remaining part of the side surface of the first electronic component excluding the one part of the side surface of the first electronic component; and

a flat layer provided on the heat-dissipating layer making a top surface of the high-frequency module flat,

wherein a thermal conductivity of the flat layer is greater than or equal to a thermal conductivity of the insulating layer,

wherein the top surface of the first electronic component is located at a greater distance than the top surface of the second electronic component from a surface of the substrate, and

wherein the first electronic component is a power amplifier or a duplexer.