IP Library › Granted Patent US 10,955,300
Granted Patent B2
US 10,955,300 · App. 15/803,400 · Granted Mar 23, 2021

Negative poisson ratio piezoresistive sensor and method of manufacture

Inventors: Changchun Zeng (Tallahassee, FL); Zhiyong Liang (Tallahassee, FL); Yan Li (Tallahassee, FL); Sida Luo (Tallahassee, FL); Tao Liu (Tallahassee, FL)
Assignee: The Florida State University Research Foundation, Inc.
G01L1/18B29C44/357B82Y40/00G01L1/2287G01L1/26G01R29/22
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Quick Facts
Patent No.
US 10,955,300
App. No.
15/803,400
Granted
Mar 23, 2021
Kind
B2
Abstract

The present invention includes scalable and cost-effective auxetic foam sensors (AFS) created through conformably coating a thin conductive nanomaterial-sensing layer on a porous substrate having a negative Poisson's ratio. In general, the auxetic foam sensors possess multimodal sensing capability, such as large deformation sensing, small pressure sensing, shear/torsion sensing and vibration sensing and excellent robustness in humidity environment.

Claims (18)

1. An auxetic foam sensor comprising:

a porous substrate having a tunable negative Poisson ratio, wherein the porous substrate comprises auxetic foam; and

a piezoresistive layer covering at least a portion of the porous substrate, wherein the piezoresistive sensitivity of the auxetic foam sensor increases as the Poisson ratio of the porous substrate decreases, wherein the gauge factor (GF) of the auxetic foam sensor under tensile strain relative to under compressive strain is variable by tuning the Poisson ratio to provide superimposed and amplified tunneling resistance, wherein the superimposed and amplified tunneling resistance comprises an increase of tunneling resistance in both the transverse direction and in the stress direction when under tension, and a decrease of tunneling resistance in both the transverse direction and in the stress direction when under compression, wherein the GF of the auxetic foam sensor equals a first value when in a first tension region, and equals a second value when in a second tension region different than the first tension region, and equals a third value when under compression, wherein the first value, the second value, and the third value are different values.

2. The sensor of claim 1 , wherein the Poisson ratio of the substrate is about −0.5.

3. The sensor of claim 1 , wherein the piezoresistive layer comprises a conductive nanomaterial.

4. The sensor of claim 1 , wherein the piezoresistive layer comprises carbon nanotubes.

5. The sensor of claim 1 , wherein the piezoresistive layer is dip-coated onto the porous substrate.

6. The sensor of claim 1 , wherein the piezoresistive layer is about wt 1% of the sensor.

7. The sensor of claim 1 , wherein the GF of the sensor is higher under tensile strain than under compressive strain.

8. The sensor of claim 1 , wherein the GF of the sensor is higher under compressive strain than under tensile strain.

9. A wearable device comprising:

an auxetic foam sensor, the auxetic foam sensor comprising:

a porous substrate having a tunable negative Poisson ratio, wherein the porous substrate comprises auxetic foam; and

a piezoresistive layer covering at least a portion of the porous substrate, wherein the piezoresistive sensitivity of the auxetic foam sensor increases as the Poisson ratio of the porous substrate decreases, wherein the gauge factor (GF) of the auxetic foam sensor under tensile strain relative to under compressive strain is variable by tuning the Poisson ratio to provide superimposed and amplified tunneling resistance, wherein the superimposed and amplified tunneling resistance comprises an increase of tunneling resistance in both the transverse direction and in the stress direction when under tension, and a decrease of tunneling resistance in both the transverse direction and in the stress direction when under compression, wherein the GF of the auxetic foam sensor equals a first value when in a first tension region, and equals a second value when in a second tension region different than the first tension region, and equals a third value when under compression, wherein the first value, the second value, and the third value are different values.

10. The wearable device of claim 9 , wherein the piezoresistive layer of the sensor comprises carbon nanotubes.

11. The wearable device of claim 9 , wherein the wearable device is selected from a head protection device, a bio-sensing device, a gesture sensing device, a tactile sensing device and a pressure sensing device.

12. The wearable device of claim 9 , wherein the GF of the sensor is higher under tensile strain than under compressive strain.

13. The wearable device of claim 9 , wherein the GF of the sensor is higher under compressive strain than under tensile strain.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 21, 2019
From: ZENG, CHANGCHUN; LIANG, ZHIYONG; LI, YAN; LUO, SIDA; LIU, TAO
To: THE FLORIDA STATE UNIVERSITY RESEARCH FOUNDATION, INC.
Reel/Frame 049238/0271 →
Continuity (3)
Continuation PCTUS2016030716 · May 4, 2016
Provisional Application 62156609 · May 4, 2015
Related Publication 20180073943A1 · Mar 15, 2018
Cited By (1)
US 12,546,419