Semiconductor device having detection electrodes
A sealing member containing conductive particles and disposed in a seal region is formed between a display panel and a touch panel. A laminated structure formed on the display panel includes a first detection lines. The first detection lines extend from the seal region to a connection region and are connected through the conductive particles to terminals of second detection lines formed on the touch panel. A peripheral edge of the organic barrier is located inward from the conductive particles of the sealing member. The above described structure can facilitate a work for connecting external lines such as FPC to the display panel and the touch panel. Further, the structure can secure stability of electrical connection between the external lines and the touch panel.
1. A semiconductor device comprising:
a substrate, the substrate having a plurality of electrodes arrayed in a matrix;
an insulator covering the plurality of electrodes;
a plurality of detection electrodes arranged so as to overlap a part of the plurality of electrodes;
a terminal on the substrate, the terminal located along an edge of the substrate;
a first detection line electrically connected to the terminal; and
a second detection line electrically connected to one of the plurality of detection electrodes, wherein
the first detection line and the second detection line are electrically connected with each other at a contact portion,
the contact portion is located between the plurality of electrodes and an edge of the insulator in a planar view, and
the substrate is folded back between the contact portion and the terminal.
2. The semiconductor device according to claim 1 , wherein
the insulator has a multilayer structure.
3. The semiconductor device according to claim 2 , wherein
the multilayer structure comprises:
a first inorganic insulating layer;
a second inorganic insulating layer; and
an organic insulating layer between the first inorganic insulating layer and the second inorganic insulating layer, wherein
an edge of the organic insulating layer is located between the plurality of electrodes and an edge of the first inorganic insulating layer in the planar view,
the edge of the first inorganic insulating layer is located between the edge of the organic insulating layer and the edge of the substrate in the planar view,
the second inorganic insulating layer is in contact with the first inorganic insulating layer outside the edge of the organic insulating layer, and
the contact portion is located between the edge of the organic insulating layer and the edge of the second inorganic insulating layer in the planar view.
4. The semiconductor device according to claim 3 , wherein
the substrate is folded back between the edge of the organic insulating layer and the terminal.
5. The semiconductor device according to claim 3 , wherein
the substrate is folded back between the edge of the first inorganic insulating layer and the terminal.
6. The semiconductor device according to claim 1 , wherein
the terminal is at an opposite side of the plurality of electrodes.
7. The semiconductor device according to claim 1 , wherein
the contact portion is covered by a sealing member.