Slotted MEMS force sensor
Described herein is a MEMS force sensor with stress concentration design. The stress concentration can be performed by providing slots, whether through or blind, and/or selective thinning of the substrate. The MEMS force sensor is in chip scale package with solder bumps or metal pillars and there are sensing elements formed on the sensor substrate at the stress concentrate area. The stress concentration can be realized through slots, selective thinning and a combination of both.
1. A microelectromechanical system (“MEMS”) force sensor, comprising:
a semiconductor substrate;
a plurality of electrical connectors disposed on the semiconductor substrate;
at least one through slot formed on the semiconductor substrate, wherein the at least one through slot is an opening extending entirely through the semiconductor substrate, wherein the at least one through slot defines opposing ends, and wherein the at least one through slot is configured to create a stress concentration region on the semiconductor substrate in proximity to at least one of the opposing ends of the at least one through slot; and
at least one sensing element formed on the semiconductor substrate, wherein the at least one sensing element is disposed in the stress concentration region, and wherein the at least one sensing element is configured to change an electrical characteristic in response to stress.
2. The MEMS force sensor of claim 1 , wherein the at least one through slot has an elongated shape.
3. The MEMS force sensor of claim 1 , wherein the at least one sensing element is formed by implantation or diffusion.
4. The MEMS force sensor of claim 1 , wherein the semiconductor substrate comprises electrical routing, and wherein at least one of the electrical connectors and the at least one sensing element is electrically coupled via the electrical routing.
5. The MEMS force sensor of claim 1 , wherein the electrical connectors are solder bumps or metal pillars.
6. The MEMS force sensor of claim 1 , wherein the semiconductor substrate is formed of silicon or gallium arsenide.
7. The MEMS force sensor of claim 1 , wherein each of the electrical connectors is arranged in a respective corner of the semiconductor substrate.
8. The MEMS force sensor of claim 7 , wherein the at least one through slot is disposed in proximity to one of the electrical connectors.
9. The MEMS force sensor of claim 8 , wherein the at least one sensing element is arranged between the at least one through slot and the one of the electrical connectors.
10. A microelectromechanical system (“MEMS”) force sensor, comprising:
a semiconductor substrate;
a plurality of electrical connectors disposed on the semiconductor substrate;
at least one through slot formed on the semiconductor substrate, wherein the at least one through slot is an opening extending entirely through the semiconductor substrate, and wherein the at least on through slot defines opposing ends;
a selective thinning region formed on the semiconductor substrate, wherein the selective thinning region and the at least one through slot are configured to a create stress concentration region on the semiconductor substrate in proximity to at least one of the opposing ends of the at least one through slot; and
at least one sensing element formed on the semiconductor substrate, wherein the at least one sensing element is disposed in the stress concentration region, and wherein the at least one sensing element is configured to change an electrical characteristic in response to stress.
11. The MEMS force sensor of claim 10 , wherein the at least one sensing element is formed by implantation or diffusion.
12. The MEMS force sensor of claim 10 , wherein the semiconductor substrate comprises electrical routing, and wherein at least one of the electrical connectors and the at least one sensing element is electrically coupled via the electrical routing.
13. The MEMS force sensor of claim 10 , wherein the electrical connectors are solder bumps or metal pillars.
14. The MEMS force sensor of claim 10 , wherein the semiconductor substrate is formed of silicon or gallium arsenide.
15. The MEMS force sensor of claim 1 , wherein the at least one through slot is configured to create a respective stress concentration region on the semiconductor substrate in proximity to each of the opposing ends of the at least one through slot.
16. The MEMS force sensor of claim 1 , wherein the electrical connectors are arranged in rows on the semiconductor substrate, and wherein the at least one through slot is disposed between two adjacent rows.
17. The MEMS force sensor of claim 8 , wherein the at least one through slot has an elongated L shape.
18. The MEMS force sensor of claim 10 , wherein the at least one through slot is configured to create a respective stress concentration region on the semiconductor substrate in proximity to each of the opposing ends of the at least one through slot.
19. The MEMS force sensor of claim 10 , further comprising a plurality of through slots, and wherein the selective thinning region and the through slots form a thinned beam.
20. The MEMS force sensor of claim 19 , wherein the electrical connectors are arranged in rows on the semiconductor substrate, and wherein each of the through slots is disposed between two adjacent rows.